APT5024BVFRG [MICROSEMI]

Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN;


型号：	APT5024BVFRG
厂家：	Microsemi
描述：	Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN 局域网开关脉冲晶体管
文件：	总4页 (文件大小：116K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

APT5024BVFR

APT5024SVFR

500V 22A 0.240Ω

BVFR

POWER MOS V^®

FREDFET

D³PAK

SVFR

TO-247

Power MOS V^®is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V^®

also achieves faster switching speeds through optimized gate layout.

• Faster Switching

• Avalanche Energy Rated

• Lower Leakage

• TO-247 or Surface Mount D³PAK Package

• Fast Recovery Body Diode

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT5024BVFR_SVFR

UNIT

V_DSS

I_D

Drain-Source Voltage

500

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

280

Watts

W/°C

P_D

2.24

-55 to 150

300

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1210

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

500

TYP

MAX

UNIT

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 0.5 I_D[Cont.])

Ohms

µA

0.24

250

1000

±100

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

I_DSS

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 1.0mA)

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

DYNAMIC CHARACTERISTICS

Symbol Characteristic

APT5024BVFR_SVFR

Test Conditions

_GS= 0V

_DS= 25V

MIN

TYP

3600

470

180

140

MAX

4320

660

270

221

UNIT

C_iss

C_oss

C_rss

Q_g

Input Capacitance

Output Capacitance

f = 1 MHz

Reverse Transfer Capacitance

V_GS= 10V

Total Gate Charge

V_DD= 0.5 V_DSS

Q_gs

Q_gd

t_d(on)

t_r

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

I_D= I_D[Cont.] @ 25°C

V_GS= 15V

V_DD= 0.5 V_DSS

I_D= I_D[Cont.] @ 25°C

R_G= 1.6Ω

t_d(off)

t_f

Turn-off Delay Time

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol Characteristic / Test Conditions

TYP

MAX

UNIT

Continuous Source Current (Body Diode)

I_S

Amps

I_SM

V_SD

Pulsed Source Current (Body Diode)

Diode Forward Voltage

Peak Diode Recovery ^dv

Reverse Recovery Time

(V_GS= 0V, I_S= -I_D[Cont.])

1.3

Volts

V/ns

T_j= 25°C

T_j= 125°C

T_j= 25°C

T_j= 125°C

T_j= 25°C

T_j= 125°C

250

450

µC

t_rr

(I_S= -I_D[Cont.], ^di

Reverse Recovery Charge

(I_S= -I_D[Cont.], ^di

_dt= 100A/µs)

Peak Recovery Current

(I_S= -I_D[Cont.], ^di

_dt= 100A/µs)

/_dt= 100A/µs)

1.8

6.0

Q_rr

I_RRM

Amps

THERMAL CHARACTERISTICS

Symbol Characteristic

TYP

MAX

0.45

UNIT

Junction to Case

R_θJC

R_θJA

°C/W

Junction to Ambient

Repetitive Rating: Pulse width limited by maximum junction

temperature.

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

See MIL-STD-750 Method 3471

Starting T = +25°C, L = 5.00mH, R = 25Ω, Peak I = 22A

numbers reflect the limitations of the test circuit rather than the

device itself.

≤ I -22A

≤ 700A/µs

_R≤ 500V T ≤ 150°C

APT Reserves the right to change, without notice, the specifications and information contained herein.

0.5

D=0.5

0.2

0.1

0.05

Note:

0.02

0.01

0.005

SINGLE PULSE

Duty Factor D =

Peak T = P x Z

+ T

DM θJC

0.001

10^-5

10^-4

10^-3

10^-2

10^-1

1.0

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

APT5024BVFR_SVFR

=7V, 10V & 15V

=15V

=7V & 10V

5.5V

4.5V

5.5V

4.5V

100

150

200

250

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS

1.8

= -55°C

NORMALIZED TO

= 10V

0.5 I [Cont.]

> I (ON) x

(ON)MAX.

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

1.6

1.4

1.2

1.0

0.8

=10V

=20V

= +125°C

= +25°C

= -55°C

, GATE-TO-SOURCE VOLTAGE (VOLTS)

I , DRAIN CURRENT (AMPERES)

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS

FIGURE 5, R (ON) vs DRAIN CURRENT

1.20

1.15

1.10

1.05

1.00

0.95

0.90

100

125

150

-50 -25

25 50 75 100 125 150

T , CASE TEMPERATURE (°C)

T , JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE

FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

1.2

= 0.5 I [Cont.]

= 10V

1.1

1.0

0.9

0.8

0.7

0.6

2.0

1.5

1.0

0.5

0.0

-50 -25

25 50

75 100 125 150

-50 -25

25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

T , CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE

FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

APT5024BVFR_SVFR

100

10,000

5,000

10µS

OPERATION HERE

LIMITED BY R (ON)

100µS

iss

1mS

oss

1,000

500

10mS

rss

100mS

=+25°C

=+150°C

SINGLE PULSE

100

50 100

500

.01

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

100

= I [Cont.]

=+150°C

T =+25°C

=100V

=250V

=400V

100

150

200

250

300

0.4

0.8

1.2

1.6

2.0

Q , TOTAL GATE CHARGE (nC)

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

D³PAK Package Outline (SVFR)

TO-247 Package Outline (BVFR)

4.69 (.185)

5.31 (.209)

15.49 (.610)

16.26 (.640)

4.98 (.196)

1.49 (.059)

2.49 (.098)

15.95 (.628)

16.05 (.632)

13.41 (.528)

13.51 (.532)

5.08 (.200)

1.04 (.041)

1.15 (.045)

1.47 (.058)

1.57 (.062)

5.38 (.212)

6.20 (.244)

6.15 (.242) BSC

20.80 (.819)

21.46 (.845)

11.51 (.453)

11.61 (.457)

13.79 (.543)

13.99 (.551)

3.50 (.138)

3.81 (.150)

0.46 (.018)

0.56 (.022)

1.27 (.050)

1.40 (.055)

2.87 (.113)

3.12 (.123)

4.50 (.177) Max.

0.020 (.001)

0.178 (.007)

2.40 (.094)

2.70 (.106)

1.98 (.078)

2.08 (.082)

1.65 (.065)

2.13 (.084)

2.67 (.105)

2.84 (.112)

(Base of Lead)

0.40 (.016)

0.79 (.031)

19.81 (.780)

20.32 (.800)

Heat Sink (Drain)

and Leads

are Plated

1.01 (.040)

1.40 (.055)

Gate

Drain

Source

1.22 (.048)

1.32 (.052)

5.45 (.215) BSC

{2 Plcs.}

Source

Drain

Gate

Dimensions in Millimeters (Inches)

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

2.21 (.087)

2.59 (.102)

5.45 (.215) BSC

2-Plcs.

Dimensions in Millimeters and (Inches)

APT5024BVFRG [MICROSEMI]

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