APT5025BNR-GULLWING [MICROSEMI]

Power Field-Effect Transistor, 23A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN;
APT5025BNR-GULLWING
型号: APT5025BNR-GULLWING
厂家: Microsemi    Microsemi
描述:

Power Field-Effect Transistor, 23A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

文件: 总2页 (文件大小:79K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

APT5025CN

Transistor
ADPOW

APT5025DN

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
ADPOW

APT5025HN

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 21A I(D) | TO-258ISO
ETC

APT5026HVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW

APT5027

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
ADPOW

APT5027BN

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 22A I(D) | TO-247AD
ETC

APT5027BNR

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 23A I(D) | TO-247AD
ETC

APT5027BNR-BUTT

Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
ADPOW

APT5027BNR-GULLWING

20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
MICROSEMI

APT5027BVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
ADPOW

APT5027CLL

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
MICROSEMI

APT5027CLL

Power Field-Effect Transistor, 16A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3
ADPOW