APT50GT120JU2 [MICROSEMI]
Boost chopper Trench + Field Stop IGBT; 升压斩波沟道+场截止IGBT
| 型号： | APT50GT120JU2 |
| 厂家： | 
Microsemi |
| 描述： | Boost chopper Trench + Field Stop IGBT |
| 文件： | 总7页 (文件大小：506K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT50GT120JU2
ISOTOPBoost chopper
VCES = 1200V
Trench + Field Stop IGBT®
IC = 50A @ Tc = 80°C
K
Application
•
•
•
•
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
C
Features
G
•
Trench + Field Stop IGBT® Technology
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
E
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
•
•
•
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
K
E
Benefits
•
•
•
•
•
•
•
Low conduction losses
C
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
ISOTOP
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
IC1
IC2
Collector - Emitter Breakdown Voltage
1200
75
50
100
±20
347
V
TC = 25°C
TC = 80°C
TC = 25°C
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
V
W
Maximum Power Dissipation
TC = 25°C
IFAV
IFRMS
Maximum Average Forward Current
RMS Forward Current (Square wave, 50% duty)
Duty cycle=0.5 TC = 80°C
27
34
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 7
www.microsemi.com
APT50GT120JU2
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
5
2.1
mA
Tj = 25°C
Tj = 125°C
1.4
5.0
1.7
2.0
VGE =15V
VCE(sat) Collector Emitter saturation Voltage
V
IC = 50A
VGE(th) Gate Threshold Voltage
IGES
VGE = VCE, IC = 2mA
6.5
500
V
nA
Gate – Emitter Leakage Current
VGE = ±20V, VCE = 0V
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
3600
pF
Output Capacitance
188
163
85
Reverse Transfer Capacitance
Resistive Switching (25°C)
VGE = 15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
30
420
65
ns
VBus = 600V
IC = 50A
RG = 18Ω
Inductive Switching (125°C)
90
VGE = 15V
45
520
90
ns
VBus = 600V
IC = 50A
Tf
Eon
Eoff
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
RG = 18Ω
6.6
5.8
mJ
2 - 7
www.microsemi.com
APT50GT120JU2
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IF = 30A
2.0
2.3
1.8
2.5
VF
Diode Forward Voltage
V
IF = 60A
IF = 30A
Tj = 125°C
Tj = 25°C
Tj = 125°C
VR = 1200V
VR = 1200V
VR = 200V
IF=1A,VR=30V
di/dt =100A/µs
250
500
IRM
CT
Maximum Reverse Leakage Current
Junction Capacitance
µA
pF
32
31
Reverse Recovery Time
Tj = 25°C
trr
ns
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
370
500
5
Reverse Recovery Time
IF = 30A
IRRM
Qrr
Maximum Reverse Recovery Current
A
VR = 800V
di/dt =200A/µs
12
660
3450
Reverse Recovery Charge
nC
Tj = 125°C
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
220
4650
37
ns
nC
A
IF = 30A
VR = 800V
di/dt =1000A/µs
Tj = 125°C
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.36
RthJC
Junction to Case Thermal Resistance
Junction to Ambient (IGBT & Diode)
°C/W
1.1
20
RthJA
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
VISOL
2500
-55
V
TJ,TSTG Storage Temperature Range
150
300
1.5
°C
TL
Max Lead Temp for Soldering:0.063” from case for 10 sec
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
N.m
g
Wt
Package Weight
29.2
Typical IGBT Performance Curve
Operating Frequency vs Collector Current
60
VCE=600V
D=50%
RG=18 Ω
50
40
TJ=125°C
30
20
10
0
0
10 20 30 40 50 60 70 80
IC (A)
3 - 7
www.microsemi.com
APT50GT120JU2
Output Characteristics (VGE=15V)
Output Characteristics
100
75
50
25
0
100
75
50
25
0
TJ = 125°C
TJ=25°C
VGE=17V
VGE=13V
VGE=15V
VGE=9V
TJ=125°C
0
1
2
3
4
0
1
2
CE (V)
3
4
VCE (V)
V
Energy losses vs Collector Current
Transfert Characteristics
100
75
50
25
0
20
16
12
8
VCE = 600V
Eon
TJ=25°C
VGE = 15V
TJ=125°C
RG = 18 Ω
TJ = 125°C
Eoff
4
0
0
25
50
75
100
5
6
7
8
9
10
11
12
I
C (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Safe Operating Area
12
120
100
80
60
40
20
0
Eon
VCE = 600V
GE =15V
IC = 50A
TJ = 125°C
10
8
V
Eoff
6
4
VGE=15V
TJ=125°C
RG=18 Ω
2
0
5
10
15
20
25
30
0
400
800
VCE (V)
1200
1600
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.4
IGBT
0.35
0.3
0.9
0.7
0.25
0.2
0.5
0.3
0.15
0.1
0.1
0.05
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
4 - 7
www.microsemi.com
APT50GT120JU2
Typical Diode Performance Curve
5 - 7
www.microsemi.com
APT50GT120JU2
6 - 7
www.microsemi.com
APT50GT120JU2
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
r = 4.0 (.157)
(2 places)
25.4 (1.000)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030) 12.6 (.496)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
Collector
Cathode
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
Emitter
Dimensions in Millimeters and (Inches)
Gate
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
7 - 7
www.microsemi.com
相关型号：
APT50GT120LRDQ2G
Insulated Gate Bipolar Transistor, 106A I(C), 1200V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN
MICROSEMI
©2020 ICPDF网 联系我们和版权申明