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APT50M50L2FLL_04 [MICROSEMI]

POWER MOS 7 R FREDFET; 功率MOS 7 R FREDFET
APT50M50L2FLL_04
型号： APT50M50L2FLL_04
厂家： Microsemi    Microsemi
描述：

POWER MOS 7 R FREDFET
功率MOS 7 R FREDFET
文件： 总5页 (文件大小：99K)
中文：  中文翻译
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APT50M50L2FLL  
500V 89A 0.050Ω  
R
POWER MOS 7 FREDFET  
Power MOS 7® is a new generation of low loss, high voltage, N-Channel  
enhancement mode power MOSFETS. Both conduction and switching  
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)  
and Qg. Power MOS 7® combines lower conduction and switching losses  
along with exceptionally fast switching speeds inherent with APT's  
patented metal gate structure.  
TO-264  
Max  
• Lower Input Capacitance  
• Increased Power Dissipation  
D
S
• Lower Miller Capacitance • Easier To Drive  
G
• Lower Gate Charge, Qg  
• Popular TO-264 MAX Package  
•
FAST RECOVERY BODY DIODE  
MAXIMUM RATINGS  
Symbol Parameter  
All Ratings: T = 25°C unless otherwise specified.  
C
APT50M50L2LL  
UNIT  
VDSS  
ID  
Drain-Source Voltage  
500  
89  
Volts  
Continuous Drain Current @ TC = 25°C  
Amps  
Volts  
1
IDM  
Pulsed Drain Current  
356  
VGS  
VGSM  
Gate-Source Voltage Continuous  
Gate-Source Voltage Transient  
Total Power Dissipation @ TC = 25°C  
Linear Derating Factor  
±30  
±40  
Watts  
W/°C  
893  
PD  
7.14  
-55 to 150  
300  
TJ,TSTG  
TL  
Operating and Storage Junction Temperature Range  
°C  
Amps  
mJ  
Lead Temperature: 0.063" from Case for 10 Sec.  
1
IAR  
Avalanche Current  
(Repetitive and Non-Repetitive)  
89  
1
EAR  
EAS  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
50  
4
3200  
STATICELECTRICALCHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
TYP  
MAX  
UNIT  
Volts  
Ohms  
BVDSS  
RDS(on)  
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)  
500  
2
Drain-Source On-State Resistance  
(VGS = 10V, 44.5A)  
0.050  
250  
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)  
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)  
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)  
Gate Threshold Voltage (VDS = VGS, ID = 5mA)  
IDSS  
µA  
1000  
±100  
5
IGSS  
nA  
VGS(th)  
Volts  
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  
DYNAMIC CHARACTERISTICS  
APT50M50L2FLL  
Symbol  
MIN  
TYP  
MAX  
Characteristic  
UNIT  
TestConditions  
Ciss  
V
= 0V  
Input Capacitance  
10550  
2060  
105  
200  
50  
GS  
V
= 25V  
Coss  
pF  
Output Capacitance  
DS  
f = 1 MHz  
Crss  
Qg  
Reverse Transfer Capacitance  
3
V
= 10V  
Total Gate Charge  
GS  
V
= 250V  
Qgs  
Qgd  
td(on)  
tr  
nC  
ns  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time  
Rise Time  
DD  
I
= 89A @ 25°C  
D
105  
24  
RESISTIVESWITCHING  
V
= 15V  
GS  
22  
V
= 250V  
DD  
td(off)  
56  
Turn-off Delay Time  
Fall Time  
I
= 89A @ 25°C  
D
tf  
R
= 0.6Ω  
8
G
INDUCTIVESWITCHING@25°C  
6
Eon  
Eoff  
1490  
1650  
2105  
1835  
Turn-on Switching Energy  
V
= 333V, V = 15V  
GS  
DD  
I
Turn-off Switching Energy  
= 89A, R = 3Ω  
D
G
µJ  
INDUCTIVESWITCHING@125°C  
6
Eon  
Eoff  
Turn-on Switching Energy  
V
= 333V V = 15V  
GS  
DD  
Turn-off Switching Energy  
I
= 89A, R = 3Ω  
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
TYP  
MAX  
89  
UNIT  
IS  
Continuous Source Current (Body Diode)  
Amps  
1
ISM  
Pulsed Source Current  
Diode Forward Voltage  
(Body Diode)  
356  
1.3  
15  
2
VSD  
Volts  
V/ns  
(VGS = 0V, IS = -89A)  
dv  
/
dv  
5
Peak Diode Recovery  
/
dt  
dt  
Reverse Recovery Time  
(IS = -89A, di/dt = 100A/µs)  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
300  
600  
trr  
ns  
µC  
Reverse Recovery Charge  
(IS = -89A, di/dt = 100A/µs)  
2.6  
10  
17  
34  
Qrr  
Peak Recovery Current  
(IS = -89A, di/dt = 100A/µs)  
IRRM  
Amps  
THERMALCHARACTERISTICS  
Symbol Characteristic  
MIN  
TYP  
MAX  
0.14  
40  
UNIT  
Junction to Case  
RθJC  
RθJA  
°C/W  
Junction to Ambient  
1 Repetitive Rating: Pulse width limited by maximum junction  
temperature  
4 Starting T = +25°C, L = 0.81mH, R = 25Ω, Peak I = 89A  
j
G
L
dv  
5
/
numbers reflect the limitations of the test circuit rather than the  
di  
dt  
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%  
3 See MIL-STD-750 Method 3471  
device itself.  
I
≤ -89A  
/
≤ 700A/µs  
V
R ≤ 500V T ≤ 150°C  
dt  
S
J
6
Eon includes diode reverse recovery. See figures 18, 20.  
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.  
0.16  
0.14  
0.9  
0.12  
0.7  
0.10  
0.08  
0.5  
Note:  
0.06  
t
1
0.3  
t
0.04  
2
t
1
Duty Factor D =  
/
t
2
0.02  
0
0.1  
Peak T = P  
x Z + T  
J
DM  
θJC C  
0.05  
SINGLEPULSE  
10-3  
10-5  
10-4  
10-2  
10-1  
1.0  
RECTANGULARPULSEDURATION(SECONDS)  
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION  
Typical Performance Curves  
APT50M50L2FLL  
200  
180  
160  
140  
120  
100  
80  
15 &10V  
7.5V  
7V  
RC MODEL  
Junction  
temp. (°C)  
6.5V  
0.0622  
0.0778  
0.0191F  
0.209F  
Power  
(watts)  
6V  
60  
40  
5.5V  
5V  
20  
0
Case temperature. (°C)  
0
5
10  
15  
20  
25  
30  
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)  
DS  
FIGURE2,TRANSIENT THERMAL IMPEDANCE MODEL  
FIGURE3,LOW VOLTAGEOUTPUTCHARACTERISTICS  
1.4  
180  
NORMALIZED TO  
V
> I (ON) x  
R
MAX.  
DS(ON)  
DS  
D
V
= 10V  
@
I
= 44.5A  
GS  
D
160  
140  
120  
100  
80  
250µSEC. PULSE TEST  
@ <0.5 % DUTY CYCLE  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
T
= -55°C  
J
T
= +125°C  
V
=10V  
J
GS  
T
= +25°C  
60  
J
V
=20V  
GS  
40  
20  
0
0
1
2
3
4
5
6
7
8
0
20 40 60 80 100 120 140 160 180  
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)  
I ,DRAINCURRENT(AMPERES)  
GS  
D
FIGURE4,TRANSFERCHARACTERISTICS  
FIGURE5,R  
vsDRAINCURRENT  
DS(ON)  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.15  
1.10  
1.05  
1.00  
0.95  
0.90  
0.85  
25  
50  
75  
100  
125  
150  
-50 -25  
0
25  
50 75 100 125 150  
T ,CASETEMPERATURE(°C)  
T ,JUNCTIONTEMPERATURE(°C)  
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE  
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE  
2.5  
1.2  
I
= 44.5A  
= 10V  
D
V
GS  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
2.0  
1.5  
1.0  
0.5  
0.0  
-50 -25  
0
25 50  
75 100 125 150  
-50 -25  
0
25  
50  
75 100 125 150  
T ,JUNCTIONTEMPERATURE(°C)  
T ,CASETEMPERATURE(°C)  
J
C
FIGURE8,R  
vs.TEMPERATURE  
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE  
DS(ON)  
APT50M50L2FLL  
356  
100  
30,000  
10,000  
OPERATIONHERE  
LIMITEDBYR (ON)  
DS  
C
iss  
100µS  
C
oss  
1,000  
10  
1mS  
C
rss  
100  
10  
10mS  
T
=+25°C  
C
T =+150°C  
J
SINGLEPULSE  
1
1
10  
100  
500  
0
10  
20  
30  
40  
50  
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)  
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)  
DS  
DS  
FIGURE10,MAXIMUMSAFEOPERATINGAREA  
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE  
16  
200  
I
= 89A  
D
100  
T =+150°C  
J
V
=100V  
12  
DS  
T =+25°C  
J
V
=250V  
DS  
V
=400V  
DS  
8
4
0
10  
1
0.3  
V
0
50  
100  
150  
200  
250  
300  
0.5  
0.7  
0.9  
1.1  
1.3  
1.5  
Q ,TOTALGATECHARGE(nC)  
,SOURCE-TO-DRAINVOLTAGE(VOLTS)  
g
SD  
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE  
FIGURE13,SOURCE-DRAINDIODEFORWARDVOLTAGE  
180  
100  
V
= 333V  
DD  
= 3Ω  
t
90  
80  
70  
60  
50  
40  
30  
20  
R
T
160  
140  
120  
100  
80  
d(off)  
G
t
= 125°C  
f
J
L = 100µH  
V
= 333V  
DD  
= 3Ω  
R
T
G
= 125°C  
J
L = 100µH  
60  
40  
t
r
t
d(on)  
20  
0
10  
0
10  
30  
50  
70  
I
90  
(A)  
110 130 150  
10  
30  
50  
70  
I
90  
(A)  
D
110 130 150  
D
FIGURE 14, DELAY TIMES vs CURRENT  
FIGURE 15, RISE AND FALL TIMES vs CURRENT  
4000  
3500  
3000  
2500  
2000  
1500  
1000  
9000  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
V
= 333V  
V
I
= 333V  
DD  
DD  
= 89A  
R
= 3Ω  
G
D
T
= 125°C  
E
T
= 125°C  
J
off  
J
L = 100µH  
L = 100µH  
EON includes  
EON includes  
diode reverse recovery.  
diode reverse recovery.  
E
on  
E
on  
E
off  
500  
0
1000  
0
10  
30  
50  
70  
D
90  
(A)  
110 130 150  
0
5
10 15 20 25 30 35 40 45 50  
I
R ,GATERESISTANCE(Ohms)  
G
FIGURE16, SWITCHING ENERGYvs CURRENT  
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE  
APT50M50L2FLL  
10 %  
90%  
Gate Voltage  
Drain Current  
Gate Voltage  
T
= 125 C  
T
= 125 C  
J
J
t
d(off)  
t
90%  
d(on)  
90%  
Drain Voltage  
t
r
t
f
5 %  
10%  
10 %  
0
Drain Current  
Drain Voltage  
Switching Energy  
Switching Energy  
Figure19,Turn-offSwitchingWaveformsandDefinitions  
Figure18,Turn-onSwitchingWaveformsandDefinitions  
APT60DF60  
VCE  
IC  
VDD  
G
D.U.T.  
Figure 20, Inductive Switching Test Circuit  
TO-264MAXTM(L2)PackageOutline  
4.60 (.181)  
5.21 (.205)  
19.51 (.768)  
20.50 (.807)  
1.80 (.071)  
2.01 (.079)  
5.79 (.228)  
6.20 (.244)  
25.48 (1.003)  
26.49 (1.043)  
2.29 (.090)  
2.69 (.106)  
2.29 (.090)  
2.69 (.106)  
19.81 (.780)  
21.39 (.842)  
Gate  
Drain  
Source  
0.48 (.019)  
0.84 (.033)  
2.59 (.102)  
3.00 (.118)  
0.76 (.030)  
1.30 (.051)  
2.79 (.110)  
3.18 (.125)  
5.45 (.215) BSC  
2-Plcs.  
Dimensions in Millimeters and (Inches)  
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522  
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.  

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