APT50M50L2LL [MICROSEMI]
POWER MOS 7 R MOSFET; 功率MOS 7 R MOSFET
| 型号： | APT50M50L2LL |
| 厂家： | 
Microsemi |
| 描述： | POWER MOS 7 R MOSFET |
| 文件： | 总5页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT50M50L2LL
500V 89A 0.050Ω
R
POWER MOS 7 MOSFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
TO-264
Max
D
S
• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
G
• Lower Gate Charge, Qg
• Popular TO-264 MAX Package
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT50M50L2LL
UNIT
VDSS
ID
Drain-Source Voltage
500
89
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
356
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±30
±40
Watts
W/°C
893
PD
7.14
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
89
1
EAR
EAS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
4
3200
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
2
Drain-Source On-State Resistance
(VGS = 10V, 44.5A)
0.050
100
500
±100
5
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
IDSS
µA
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT50M50L2LL
DYNAMIC CHARACTERISTICS
Symbol Characteristic
TestConditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
10550
2060
105
200
50
V
= 0V
GS
Output Capacitance
V
= 25V
pF
DS
f = 1 MHz
Reverse Transfer Capacitance
3
V
= 10V
Total Gate Charge
GS
V
= 250V
Qgs
Qgd
td(on)
tr
DD
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
I
= 89A @ 25°C
D
105
24
RESISTIVESWITCHING
V
= 15V
GS
22
V
= 250V
DD
I
= 89A @ 25°C
td(off)
56
Turn-off Delay Time
Fall Time
D
R
= 0.6Ω
G
tf
8
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy
1490
1650
2105
1835
V
= 333V, V = 15V
GS
DD
I
= 89A, R = 3Ω
Turn-off Switching Energy
D
G
µJ
INDUCTIVESWITCHING@125°C
6
Turn-on Switching Energy
V
= 333V, V = 15V
GS
DD
I
= 89A, R = 3Ω
Turn-off Switching Energy
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol
MIN
TYP
MAX
89
Characteristic / Test Conditions
UNIT
IS
Continuous Source Current (Body Diode)
Amps
ISM
1
356
1.3
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
2
VSD
t rr
(VGS = 0V, IS = -89A)
Volts
ns
680
Reverse Recovery Time (IS = -89A, dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -89A, dlS/dt = 100A/µs)
Q rr
17.0
µC
dv
/
dv
5
V/ns
8
Peak Diode Recovery
/
dt
dt
THERMALCHARACTERISTICS
Symbol
RθJC
UNIT
Characteristic
MIN
TYP
MAX
0.14
40
Junction to Case
Junction to Ambient
°C/W
RθJA
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
4 Starting T = +25°C, L = 0.81mH, R = 25Ω, Peak I = 89A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ -89A
/
≤ 700A/µs
V
R ≤ 500V T ≤ 150°C
dt
S
J
3 See MIL-STD-750 Method 3471
6
Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.16
0.14
0.9
0.12
0.7
0.10
0.08
0.5
Note:
0.06
t
1
0.3
t
0.04
2
t
1
Duty Factor D =
/
t
2
0.02
0
0.1
Peak T = P
x Z + T
J
DM
θJC C
0.05
SINGLEPULSE
10-3
10-5
10-4
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Typical Performance Curves
APT50M50L2LL
200
180
160
140
120
100
80
15 &10V
7.5V
7V
RC MODEL
Junction
temp. (°C)
6.5V
0.0622
0.0778
0.0191F
0.209F
Power
(watts)
6V
60
40
5.5V
5V
20
0
Case temperature. (°C)
0
5
10
15
20
25
30
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2,TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGEOUTPUTCHARACTERISTICS
1.4
180
NORMALIZED TO
V
> I (ON) x
R
MAX.
DS(ON)
DS
D
V
= 10V
@
I
= 44.5A
GS
D
160
140
120
100
80
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
1.3
1.2
1.1
1.0
0.9
0.8
T
= -55°C
J
T
= +125°C
V
=10V
J
GS
T
= +25°C
60
J
V
=20V
GS
40
20
0
0
1
2
3
4
5
6
7
8
0
20 40 60 80 100 120 140 160 180
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4,TRANSFERCHARACTERISTICS
FIGURE5,R
vsDRAINCURRENT
DS(ON)
90
80
70
60
50
40
30
20
10
0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
2.5
1.2
I
= 44.5A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,R
vs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
DS(ON)
APT50M50L2LL
356
100
30,000
10,000
OPERATIONHERE
C
iss
LIMITEDBYR (ON)
DS
100µS
C
oss
1,000
10
1mS
C
rss
100
10
10mS
T
=+25°C
C
J
T =+150°C
SINGLEPULSE
1
1
10
100
500
0
10
20
30
40
50
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
16
200
I
= 89A
D
100
T =+150°C
J
V
=100V
12
DS
T =+25°C
J
V
=250V
DS
V
=400V
DS
8
4
0
10
1
0.3
V
0
50
100
150
200
250
300
0.5
0.7
0.9
1.1
1.3
1.5
Q ,TOTALGATECHARGE(nC)
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
g
SD
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13,SOURCE-DRAINDIODEFORWARDVOLTAGE
100
180
V
= 333V
DD
= 3Ω
t
90
80
70
60
50
40
30
20
R
T
d(off)
160
140
120
100
80
G
t
= 125°C
f
J
L = 100µH
V
= 333V
DD
= 3Ω
R
T
G
= 125°C
J
L = 100µH
60
40
t
r
t
d(on)
20
0
10
0
10
30
50
70
I
90
(A)
110 130 150
10
30
50
70
I
90
(A)
110 130 150
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
4000
3500
3000
2500
2000
1500
1000
9000
8000
7000
6000
5000
4000
3000
2000
V
= 333V
V
I
= 333V
DD
DD
= 89A
R
= 3Ω
G
D
T
= 125°C
E
T
= 125°C
J
off
J
L = 100µH
L = 100µH
EON includes
EON includes
diode reverse recovery.
diode reverse recovery.
E
on
E
on
E
off
500
0
1000
0
10
30
50
70
D
90
(A)
110 130 150
0
5
10 15 20 25 30 35 40 45 50
I
R ,GATERESISTANCE(Ohms)
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT50M50L2LL
10 %
90%
Gate Voltage
Drain Current
Gate Voltage
T
= 125 C
T
= 125 C
J
J
t
d(off)
t
90%
d(on)
90%
Drain Voltage
t
r
t
f
5 %
10%
10 %
0
Drain Current
Drain Voltage
Switching Energy
Switching Energy
Figure19,Turn-offSwitchingWaveformsandDefinitions
Figure18,Turn-onSwitchingWaveformsandDefinitions
APT60DF60
VCE
IC
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-264MAXTM(L2)PackageOutline
4.60 (.181)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.80 (.071)
2.01 (.079)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
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