首页 |元器件品牌

APT50M75JLLU2_06 [MICROSEMI]

Boost chopper MOSFET Power Module; 升压斩波MOSFET功率模块
APT50M75JLLU2_06
型号： APT50M75JLLU2_06
厂家： Microsemi    Microsemi
描述：

Boost chopper MOSFET Power Module
升压斩波MOSFET功率模块
文件： 总8页 (文件大小：493K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
APT50M75JLLU2  
VDSS = 500V  
ISOTOP® Boost chopper  
RDSon = 75mΩ max @ Tj = 25°C  
MOSFET Power Module  
ID = 51A @ Tc = 25°C  
K
Application  
•
•
•
•
AC and DC motor control  
Switched Mode Power Supplies  
Power Factor Correction  
Brake switch  
D
Features  
•
Power MOS 7® MOSFETs  
-
-
-
-
-
-
Low RDSon  
G
Low input and Miller capacitance  
Low gate charge  
Fast intrinsic reverse diode  
Avalanche energy rated  
Very rugged  
S
•
•
•
ISOTOP® Package (SOT-227)  
Very low stray inductance  
High level of integration  
K
S
Benefits  
•
•
•
•
•
•
Outstanding performance at high frequency operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Very rugged  
D
G
Low profile  
RoHS Compliant  
ISOTOP  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VDSS  
Drain - Source Breakdown Voltage  
500  
V
Tc = 25°C  
Tc = 80°C  
51  
39  
204  
±30  
75  
ID  
Continuous Drain Current  
A
IDM  
VGS  
RDSon  
Pulsed Drain current  
Gate - Source Voltage  
Drain - Source ON Resistance  
V
mΩ  
W
PD  
IAR  
EAR  
EAS  
IFAV  
IFRMS  
Maximum Power Dissipation  
Tc = 25°C  
Tc = 80°C  
290  
Avalanche current (repetitive and non repetitive)  
51  
50  
A
Repetitive Avalanche Energy  
mJ  
Single Pulse Avalanche Energy  
2500  
30  
Maximum Average Forward Current  
Duty cycle=0.5  
A
RMS Forward Current (Square wave, 50% duty)  
39  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 – 8  
www.
microsemi
.com  
APT50M75JLLU2  
All ratings @ Tj = 25°C unless otherwise specified  
Electrical Characteristics  
Symbol Characteristic  
Test Conditions  
Min Typ Max Unit  
VGS = 0V,VDS = 500V Tj = 25°C  
100  
500  
75  
5
±100  
IDSS  
Zero Gate Voltage Drain Current  
µA  
VGS = 0V,VDS = 400V Tj = 125°C  
RDS(on) Drain – Source on Resistance  
VGS(th) Gate Threshold Voltage  
IGS S  
VGS = 10V, ID = 25.5A  
mΩ  
V
nA  
VGS = VDS, ID = 1mA  
3
Gate – Source Leakage Current  
VGS = ±20 V, VDS = 0V  
Dynamic Characteristics  
Symbol Characteristic  
Test Conditions  
Min Typ Max Unit  
Ciss  
Coss  
Crss  
Input Capacitance  
5590  
VGS = 0V  
VDS = 25V  
f = 1MHz  
pF  
Output Capacitance  
1180  
85  
Reverse Transfer Capacitance  
Qg  
Qgs  
Qgd  
Total gate Charge  
123  
33  
65  
10  
20  
21  
5
VGS = 10V  
VBus = 250V  
ID = 51A  
nC  
Gate – Source Charge  
Gate – Drain Charge  
Td(on) Turn-on Delay Time  
Tr Rise Time  
Td(off) Turn-off Delay Time  
Resistive Switching  
VGS = 15V  
VBus = 250V  
ID = 51A  
ns  
RG = 0.6Ω  
Tf  
Fall Time  
Inductive switching @ 25°C  
VGS = 15V, VBus = 330V  
ID = 51A, RG = 5Ω  
Inductive switching @ 125°C  
VGS = 15V, VBus = 330V  
ID = 51A, RG = 5Ω  
Eon  
Eoff  
Eon  
Eoff  
Turn-on Switching Energy  
Turn-off Switching Energy  
Turn-on Switching Energy  
Turn-off Switching Energy  
755  
726  
µJ  
µJ  
1241  
846  
2 – 8  
www.
microsemi
.com  
APT50M75JLLU2  
Chopper diode ratings and characteristics  
Symbol Characteristic  
Test Conditions  
Min Typ Max Unit  
IF = 30A  
1.6  
1.9  
1.4  
1.8  
VF  
Diode Forward Voltage  
V
IF = 60A  
IF = 30A  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
VR = 600V  
VR = 600V  
VR = 200V  
IF=1A,VR=30V  
di/dt =100A/µs  
250  
500  
IRM  
CT  
Maximum Reverse Leakage Current  
Junction Capacitance  
µA  
pF  
44  
23  
Reverse Recovery Time  
Tj = 25°C  
trr  
ns  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
85  
160  
4
Reverse Recovery Time  
IF = 30A  
IRRM  
Qrr  
Maximum Reverse Recovery Current  
A
VR = 400V  
di/dt =200A/µs  
8
130  
700  
Reverse Recovery Charge  
nC  
Tj = 125°C  
trr  
Qrr  
IRRM  
Reverse Recovery Time  
Reverse Recovery Charge  
Maximum Reverse Recovery Current  
70  
1300  
30  
ns  
nC  
A
IF = 30A  
VR = 400V  
di/dt =1000A/µs  
Tj = 125°C  
Thermal and package characteristics  
Symbol Characteristic  
Min Typ Max Unit  
MOSFET  
Diode  
0.27  
RthJC  
Junction to Case Thermal Resistance  
Junction to Ambient (IGBT & Diode)  
°C/W  
1.21  
20  
RthJA  
VISOL  
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz  
2500  
-55  
V
TJ,TSTG Storage Temperature Range  
150  
300  
1.5  
°C  
TL  
Max Lead Temp for Soldering:0.063” from case for 10 sec  
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)  
N.m  
g
Wt  
Package Weight  
29.2  
Typical MOSFET Performance Curve  
3 – 8  
www.
microsemi
.com  
APT50M75JLLU2  
4 – 8  
www.
microsemi
.com  
APT50M75JLLU2  
5 – 8  
www.
microsemi
.com  
APT50M75JLLU2  
Typical Diode Performance Curve  
6 – 8  
www.
microsemi
.com  
APT50M75JLLU2  
7 – 8  
www.
microsemi
.com  
APT50M75JLLU2  
SOT-227 (ISOTOP®) Package Outline  
11.8 (.463)  
12.2 (.480)  
31.5 (1.240)  
31.7 (1.248)  
8.9 (.350)  
9.6 (.378)  
W=4.1 (.161)  
W=4.3 (.169)  
H=4.8 (.187)  
H=4.9 (.193)  
(4 places)  
7.8 (.307)  
8.2 (.322)  
Hex Nut M4  
(4 places)  
25.2 (0.992)  
r = 4.0 (.157)  
(2 places)  
25.4 (1.000)  
4.0 (.157)  
4.2 (.165)  
(2 places)  
0.75 (.030) 12.6 (.496)  
0.85 (.033) 12.8 (.504)  
3.3 (.129)  
3.6 (.143)  
1.95 (.077)  
2.14 (.084)  
14.9 (.587)  
15.1 (.594)  
Drain  
Cathode  
30.1 (1.185)  
30.3 (1.193)  
38.0 (1.496)  
38.2 (1.504)  
Source  
Dimensions in Millimeters and (Inches)  
Gate  
ISOTOP® is a registered trademark of ST Microelectronics NV  
Microsemi reserves the right to change, without notice, the specifications and information contained herein  
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522  
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.  
8 – 8  
www.
microsemi
.com  

相关型号：

APT50M75JLLU3

 ISOTOP Buck chopper MOSFET Power Module
ADPOW

APT50M75JLLU3

 ISOTOP® Buck chopper MOSFET Power Module
MICROSEMI

APT50M75JLL_04

 POWER MOS 7 R MOSFET
ADPOW

APT50M75LFLL

 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
ADPOW

APT50M75LFLLG

 Power Field-Effect Transistor, 57A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
MICROSEMI

APT50M75LLL

 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
ADPOW

APT50M75LLLG

 Power Field-Effect Transistor, 57A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, ROHS COMPLIANT, TO-264, 3 PIN
MICROSEMI

APT50M80

 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW

APT50M80B2LC

 Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
ADPOW

APT50M80B2LC

 58A, 500V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TMAX-3
MICROSEMI

APT50M80B2VFR

 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW

APT50M80B2VFRG

 Power Field-Effect Transistor, 58A I(D), 500V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-247, 3 PIN
MICROSEMI
©2020 ICPDF网 联系我们和版权申明