APT6010B2FLLE3 [MICROSEMI]
Power Field-Effect Transistor, 54A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-MAX, 3 PIN;
| 型号： | APT6010B2FLLE3 |
| 厂家： | 
Microsemi |
| 描述： | Power Field-Effect Transistor, 54A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-MAX, 3 PIN 局域网 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
600V 54A 0.100Ω
APT6010B2FLL APT6010LFLL
APT6010B2FLL* APT6010LFLLG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
R
B2FLL
POWER MOS 7 FREDFET
T-MAX™
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with Microsemi's
patented metal gate structure.
TO-264
LFLL
D
S
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
G
• Popular T-MAX™ or TO-264 Package
•
FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT6010B2_LFLL
UNIT
VDSS
ID
Drain-Source Voltage
600
54
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
216
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±30
±40
Watts
W/°C
690
PD
5.52
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
54
1
EAR
EAS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
4
3000
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
2
Drain-Source On-State Resistance
(VGS = 10V, ID = 27A)
0.100
100
500
±100
5
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
IDSS
µA
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
APT6010B2_LFLL
DYNAMIC CHARACTERISTICS
Symbol
MIN
TYP
MAX
Characteristic
UNIT
TestConditions
Ciss
V
= 0V
Input Capacitance
6710
1250
GS
V
= 25V
Coss
pF
Output Capacitance
DS
f = 1 MHz
Crss
Qg
Reverse Transfer Capacitance
90
150
30
75
12
19
34
9
3
V
= 10V
Total Gate Charge
GS
V
= 300V
DD
Qgs
Qgd
td(on)
tr
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
I
= 54A @ 25°C
D
RESISTIVESWITCHING
V
= 15V
GS
V
= 300V
DD
td(off)
Turn-off Delay Time
Fall Time
I
= 54A@ 25°C
D
tf
R
= 0.6Ω
G
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
885
970
Turn-on Switching Energy
V
= 400V, V = 15V
GS
DD
I
Turn-off Switching Energy
= 54A, R = 5Ω
D
G
µJ
INDUCTIVESWITCHING@125°C
6
Eon
Eoff
Turn-on Switching Energy
1150
1220
V
= 400V V = 15V
GS
DD
Turn-off Switching Energy
I
= 54A, R = 5Ω
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
54
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
VSD
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
216
1.3
15
2
(VGS = 0V, IS = -54A)
Volts
V/ns
dv
/
dv
5
Peak Diode Recovery
/
dt
dt
Reverse Recovery Time
(IS = -54A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
300
600
trr
ns
µC
2.7
7.8
14
Reverse Recovery Charge
(IS = -54A, di/dt = 100A/µs)
Qrr
Peak Recovery Current
(IS = -54A, di/dt = 100A/µs)
IRRM
Amps
20
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.18
40
UNIT
Junction to Case
RθJC
RθJA
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Microsemireservestherighttochange,withoutnotice,thespecificationsandinforationcontainedherein.
4 Starting T = +25°C, L = 2.06mH, R = 25Ω, Peak I = 54A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ -I 54A
/
≤ 700A/µs
V
R ≤ 600V T ≤ 150°C
dt
S
D
J
6 Eon includes diode reverse recovery. See figures 18, 20.
0.20
D = 0.9
0.16
0.7
0.12
0.5
Note:
0.08
t
1
0.3
t
2
t
0.04
1
Duty Factor D =
/
t
2
0.1
Peak T = P
x Z + T
J
DM
θJC C
SINGLEPULSE
0.05
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Typical Performance Curves
APT6010B2FLL_LFLL
140
V
=15&10V
GS
120
100
80
8V
7.5V
TJ ( C)
TC ( C)
7V
60
0.0271
0.0656
0.859
Dissipated Power
(Watts)
6.5V
40
0.009
0.0202
0.293
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
6V
20
0
5.5V
0
5
10
15
20
25
30
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
1.40
160
NORMALIZED TO
V
> I (ON) x
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
(ON)MAX.
DS
D
DS
V
= 10V
@
27A
GS
140
120
100
80
1.30
1.20
1.10
1.00
V
=10V
GS
60
V
=20V
GS
40
T
= +125°C
J
T
= -55°C
8
0.90
0.80
J
T
= +25°C
20
0
J
0
1
2
3
4
5
6
7
9
0
20
40
60
80
100
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
1.15
1.10
1.05
60
50
30
20
1.00
0.95
0.90
10
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
1.2
2.5
I
= 27A
= 10V
D
V
GS
1.1
1.0
0.9
2.0
1.5
1.0
0.8
0.5
0.0
0.7
0.6
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
APT6010B2FLL_LFLL
220
100
20,000
10,000
OPERATIONHERE
LIMITEDBYR (ON)
C
iss
DS
C
oss
1,000
100µS
10
100
10
1mS
T
=+25°C
C
rss
C
J
T =+150°C
SINGLEPULSE
10mS
1
1
10
100
600
0
10
20
30
40
50
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
16
200
I
= 54A
D
V
=120V
=300V
DS
100
V
12
DS
T =+150°C
J
V
=480V
DS
T =+25°C
J
8
4
0
10
1
0
50
100
150
200
250
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
Q ,TOTALGATECHARGE(nC)
g
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
SD
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
120
140
V
= 400V
DD
= 5Ω
R
T
t
G
d(off)
120
100
80
60
40
20
0
= 125°C
100
J
L = 100µH
V
= 400V
DD
= 5Ω
80
60
40
R
T
G
= 125°C
J
t
f
L = 100µH
t
r
t
d(on)
20
0
10 20
30
40
50 60
(A)
70
80
90
10 20 30 40
50 60
I (A)
D
70
80 90
I
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2500
2000
1500
1000
5000
4000
3000
2000
V
= 400V
V
I
= 400V
DD
= 5Ω
DD
= 54A
R
T
G
D
= 125°C
T
= 125°C
J
J
L = 100µH
E
L = 100µH
EON includes
off
E
off
EON includes
diode reverse recovery
diode reverse recovery
E
on
E
on
1000
0
500
0
10 20
30
40
50
(A)
60
70 80 90
0
5
10 15 20 25 30 35 40 45 50
I
R ,GATERESISTANCE(Ohms)
D
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT6010B2_LFLL
90%
GateVoltage
10%
GateVoltage
T 125°C
J
T 125°C
J
td(off)
td(on)
DrainCurrent
DrainVoltage
tr
DrainVoltage
DrainCurrent
90%
90%
tf
10%
0
10%
5%
5%
SwitchingEnergy
SwitchingEnergy
Figure18,Turn-onSwitchingWaveformsandDefinitions
Figure19,Turn-offSwitchingWaveformsandDefinitions
APT30DF60
VDS
ID
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2)PackageOutline
TO-264(L)PackageOutline
e1
SAC: Tin, Silver, Copper
e1
SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
4.60 (.181)
5.21 (.205)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
Gate
Drain
Source
1.01 (.040)
1.40 (.055)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.21 (.087)
2.59 (.102)
2.79 (.110)
5.45 (.215) BSC
2-Plcs.
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Microsemi’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,5225,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
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