APT68GA60B [MICROSEMI]
High Speed PT IGBT; 高速PT IGBT![APT68GA60B](http://pdffile.icpdf.com/pdf1/p00141/img/icpdf/APT68_782671_icpdf.jpg)
型号: | APT68GA60B |
厂家: | ![]() |
描述: | High Speed PT IGBT |
文件: | 总6页 (文件大小:213K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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APT68GA60B
APT68GA60S
600V
High Speed PT IGBT
POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved
APT68GA60S
through leading technology silicon design and lifetime control processes. A reduced Eoff
-
D3PAK
VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low
gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even
when switching at high frequency.
APT68GA60B
Single die IGBT
FEATURES
TYPICAL APPLICATIONS
• Fast switching with low EMI
• Very Low Eoff for maximum efficiency
• Ultra low Cres for improved noise immunity
• Low conduction loss
• ZVS phase shifted and other full bridge
• Half bridge
• High power PFC boost
• Welding
• Low gate charge
• UPS, solar, and other inverters
• High frequency, high efficiency industrial
• Increased intrinsic gate resistance for low EMI
• RoHS compliant
Absolute Maximum Ratings
Symbol Parameter
Ratings
Unit
Collector Emitter Voltage
600
V
Vces
IC1
Continuous Collector Current @ TC = 25°C 7
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1
121
68
A
IC2
ICM
202
VGE
Gate-Emitter Voltage 2
±30
V
PD
Total Power Dissipation @ TC = 25°C
Switching Safe Operating Area @ TJ = 150°C
Operating and Storage Junction Temperature Range
520
W
SSOA
TJ, TSTG
TL
202A @ 600V
-55 to 150
°C
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
300
Static Characteristics
Symbol Parameter
T = 25°C unless otherwise specified
J
Test Conditions
Min
Typ
Max
Unit
VBR(CES)
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 1.0mA
600
TJ = 25°C
TJ = 125°C
2.0
1.9
4.5
2.5
VGE = 15V,
IC = 40A
V
VCE(on)
VGE(th)
ICES
Collector-Emitter On Voltage
Gate Emitter Threshold Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
VGE =VCE , IC = 1mA
3
6
TJ = 25°C
250
VCE = 600V,
VGE = 0V
μA
TJ = 125°C
2500
±100
IGES
VGS = ±30V
nA
Thermal and Mechanical Characteristics
Symbol Characteristic
Min
Typ
Max
Unit
RθJC
WT
Junction to Case Thermal Resistance
Package Weight
-
-
-
0.24
-
°C/W
g
5.9
Torque
Mounting Torque (TO-247 Package), 4-40 or M3 screw
in·lbf
10
Microsemi Website - http://www.microsemi.com
APT68GA60B_S
Dynamic Characteristics
T = 25°C unless otherwise specified
J
Symbol
Cies
Parameter
Test Conditions
Capacitance
Min
Typ
5230
526
59
Max
Unit
Input Capacitance
Coes
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Emitter Charge
VGE = 0V, VCE = 25V
f = 1MHz
pF
Cres
Qg
Gate Charge
198
32
Qge
VGE = 15V
nC
A
VCE= 300V
Qgc
Gate- Collector Charge
66
IC = 40A
TJ = 150°C, RG = 4.7Ω4, VGE = 15V,
L= 100uH, VCE = 600V
Inductive Switching (25°C)
VCC = 400V
SSOA
Switching Safe Operating Area
202
td(on)
tr
td(off)
tf
Turn-On Delay Time
Current Rise Time
21
27
ns
μJ
ns
μJ
Turn-Off Delay Time
Current Fall Time
133
88
VGE = 15V
IC = 40A
RG = 4.7Ω4
Eon2
Eoff
td(on
tr
Turn-On Switching Energy
Turn-Off Switching Energy 6
Turn-On Delay Time
Current Rise Time
715
607
20
TJ = +25°C
Inductive Switching (125°C)
26
VCC = 400V
td(off)
tf
Turn-Off Delay Time
Current Fall Time
175
129
1117
1025
VGE = 15V
IC = 40A
RG = 4.7Ω4
Eon2
Eoff
Turn-On Switching Energy
Turn-Off Switching Energy 6
TJ = +125°C
1
2
3
4
5
Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
Pulse test: Pulse Width < 380μs, duty cycle < 2%.
See Mil-Std-750 Method 3471.
RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
6
7 Continuous current limited by package lead temperature.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
APT68GA60B_S
350
300
250
200
150
100
50
120
V
= 15V
GE
15V
13V
TJ= 125°C
100
80
60
40
20
10V
TJ= 150°C
TJ= 55°C
TJ= 25°C
9V
8V
7V
6V
5V
0
0
0
1
2
3
4
5
6
0
4
8
12 16
20 24 28
32
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
CE
FIGURE 1, Output Characteristics (T = 25°C)
FIGURE 2, Output Characteristics (T = 25°C)
J
J
240
200
160
120
80
20
15
10
5
250μs PULSE
TEST<0.5 % DUTY
CYCLE
I
= 40A
C
T
= 25°C
J
V
= 120V
CE
V
= 300V
CE
V
= 480V
CE
TJ= 25°C
40
TJ= -55°C
TJ= 125°C
0
0
0
2
4
6
8
10
12
0
40
80
120
160
200
GATE CHARGE (nC)
V
, GATE-TO-EMITTER VOLTAGE (V)
GE
FIGURE 4, Gate charge
FIGURE 3, Transfer Characteristics
4
3
2
1
0
5
4
3
2
1
0
TJ = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
I
= 80A
C
I
= 80A
= 40A
I
= 40A
C
C
I
C
I
= 20A
C
I
= 20A
C
VGE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
6
8
10
12
14
16
0
25
50
75
100
125
150
V
, GATE-TO-EMITTER VOLTAGE (V)
T , Junction Temperature (°C)
GE
J
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
1.15
140
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
120
100
80
60
40
20
0
-50 -25
0
25 50 75 100 125 150
25
50
75
100
125
150
T , JUNCTION TEMPERATURE
T , Case Temperature (°C)
J
C
FIGURE 7, Threshold Voltage vs Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
Typical Performance Curves
APT68GA60B_S
250
200
150
100
50
30
VCE = 400V
TJ = 25°C, or 125°C
R
G = 4.7ꢀ
25
20
15
10
V
= 15V
GE
L = 100μH
VGE =15V,TJ=125°C
VGE =15V,TJ=25°C
VCE = 400V
RG = 4.7ꢀ
L = 100μH
5
0
0
0
20
40
60
80
0
10 20 30
40 50
60 70 80
I
, COLLECTOR-TO-EMITTER CURRENT (A)
I
, COLLECTOR-TO-EMITTER CURRENT (A)
CE
CE
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
160
70
60
50
40
30
20
10
0
R
G = 4.7ꢀ, L = 100μH, VCE = 400V
140
120
100
80
TJ = 125°C, VGE = 15V
TJ = 25°C, VGE = 15V
60
40
TJ = 25 or 125°C,VGE = 15V
20
RG = 4.7ꢀ, L = 100μH, VCE = 400V
0
0
I
10
20 30 40
50 60 70
80
0
10 20 30
40 50
60 70 80
, COLLECTOR-TO-EMITTER CURRENT (A)
I
, COLLECTOR-TO-EMITTER CURRENT (A)
CE
CE
FIGURE 12, Current Fall Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
3000
2000
1000
0
3000
2500
2000
1500
1000
500
V
V
=
=
400V
+15V
V
V
=
=
400V
+15V
CE
GE
CE
GE
R
=4.7ꢀ
R
= 4.7ꢀ
G
G
T
J = 125°C
T
J = 125°C
T
J = 25°C
T
J = 25°C
0
0
I
10 20 30
, COLLECTOR-TO-EMITTER CURRENT (A)
40 50 60
70 80
0
10 20
30 40 50 60
70
80
I
, COLLECTOR-TO-EMITTER CURRENT (A)
CE
CE
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn-Off Energy Loss vs Collector Current
3000
2500
2000
1500
1000
500
8000
7000
6000
5000
4000
3000
2000
1000
V
V
T
=
=
400V
+15V
V
V
=
=
400V
+15V
Eon2,80A
CE
GE
CE
GE
Eon2,80A
= 125°C
R
= 4.7ꢀ
J
G
Eoff,80A
Eoff,80A
Eon2,40A
Eoff,40A
Eon2,40A
Eon2,20A
Eoff,20A
Eoff,40A
Eon2,20A
Eoff,20A
0
0
0
25
50
75
100
125
0
10
20
30
40
50
T , JUNCTION TEMPERATURE (°C)
R , GATE RESISTANCE (OHMS)
J
G
FIGURE 16, Switching Energy Losses vs Junction Temperature
FIGURE 15, Switching Energy Losses vs Gate Resistance
Typical Performance Curves
APT68GA60B_S
10000
1000
100
10
Cies
1000
Coes
100
10
1
Cres
0.1
1
10
100
800
0
100
200
300
400
500
V
, COLLECTOR-TO-EMITTER VOLTAGE
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
CE
CE
FIGURE 18, Minimum Switching Safe Operating Area
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
0.30
0.25
D = 0.9
0.20
0.7
0.15
0.5
Note:
t
1
0.10
0.3
t
2
0.05
0.1
t
1
t
/
2
Duty Factor D =
Peak T = P x Z
+ T
C
J
DM
θJC
SINGLE PULSE
10-3
0.05
0
10-4
10-2
10-5
0.1
1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
APT68GA60B_S
10%
Gate Voltage
T
= 125°C
J
td(on)
90%
APT30DQ60
tr
Collector Current
Collector Voltage
VCE
VCC
IC
10%
5%
5%
Switching Energy
A
D.U.T.
Figure 12, Inductive Switching Test Circuit
Figure 13, Turn-on Switching Waveforms and Definitions
T
= 125°C
J
90%
td(off)
Gate Voltage
Collector Voltage
Collector Current
tf
10%
0
Switching Energy
Figure 14, Turn-off Switching Waveforms and Definitions
D3PAK Package Outline
TO-247 (B) Package Outline
e3 100% Sn Plated
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
4.69 (.185)
5.31 (.209)
15.95 (.628)
16.05(.632)
13.41 (.528)
13.51(.532)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15(.045)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99(.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.}
1.01 (.040)
1.40 (.055)
Gate
Collector
Emitter
Emitter
Collector
Gate
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters (Inches)
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
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