APTGF25X120P2G [MICROSEMI]
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-17;![APTGF25X120P2G](http://pdffile.icpdf.com/pdf2/p00229/img/icpdf/APTGF25X120E_1342322_icpdf.jpg)
型号: | APTGF25X120P2G |
厂家: | ![]() |
描述: | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-17 局域网 电动机控制 栅 晶体管 |
文件: | 总4页 (文件大小:244K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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APTGF25X120E2
APTGF25X120P2
VCES = 1200V
IC = 25A @ Tc = 80°C
3 Phase bridge
Application
•
Features
•
AC Motor control
Non Punch Through (NPT) IGBT®
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Pin out: APTGF25X120E2 (Long pins)
N-
U
V
W
P+
•
•
•
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
1 2 3 4 5 6 7 8 9 10 11 12
Benefits
•
•
•
•
•
•
•
Stable temperature behavior
Very rugged
Pin out: APTGF25X120P2 (Short pins)
N-
U
V
W
P+
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
1
2
3
4
5
6
7
8
9
10
11 12
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
TC = 80°C
TC = 25°C
35
25
70
±20
200
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 150°C
SCSOA Short circuit Safe Operating Area
250A@1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 4
APT website – http://www.advancedpower.com
APTGF25X120E2
APTGF25X120P2
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
1200
BVCES Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 500µA
V
Tj = 25°C
0.5
2
0.8
VGE = 0V
VCE = 1200V
ICES
Zero Gate Voltage Collector Current
mA
Tj = 125°C
Tj = 25°C
Tj = 125°C
2.5
3.1
5.5
3.0
V
GE = 15V
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
V
IC = 25A
3.7
6.5
180
VGE = VCE , IC = 1mA
VGE = 20V, VCE = 0V
4.5
V
nA
IGES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
1650
pF
250
110
75
Inductive Switching (125°C)
Td(on)
150
130
600
100
V
GE = ±15V
Tr
Rise Time
65
400
50
ns
VBus = 600V
IC = 25A
RG = 47Ω
Td(off) Turn-off Delay Time
Tf Fall Time
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IF = 25A
Tj = 25°C
Tj = 125°C
2.3
1.8
2.8
VF
trr
Diode Forward Voltage
Reverse Recovery Time
V
V
GE = 0V
IF = 25A
VR = 600V
di/dt =800A/µs
IF = 25A
VR = 600V
di/dt =800A/µs
Tj = 125°C
0.13
µs
Tj = 25°C
2.3
6
Qrr
Reverse Recovery Charge
µC
Tj = 125°C
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.6
1
°C/W
RthJC
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
VISOL
2500
V
TJ
TSTG
TC
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
-40
-40
-40
2
150
125
125
3.5
°C
N.m
g
Torque Mounting torque
Wt Package Weight
To Heatsink
M5
185
2 - 4
APT website – http://www.advancedpower.com
APTGF25X120E2
APTGF25X120P2
Package outline
Pin out: APTGF25X120E2 (Long pins)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
3 - 4
APT website – http://www.advancedpower.com
APTGF25X120E2
APTGF25X120P2
Package outline
Pin out: APTGF25X120P2 (Short pins)
ALL DIMENSIONS MARKED " * " ARE TOLERENCEDAS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
4 - 4
APT website – http://www.advancedpower.com
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MICROSEMI
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