APTGF330SK60D3G [MICROSEMI]
Buck Chopper NPT IGBT Power Module; 降压斩波NPT IGBT功率模块
| 型号： | APTGF330SK60D3G |
| 厂家： | 
Microsemi |
| 描述： | Buck Chopper NPT IGBT Power Module |
| 文件： | 总5页 (文件大小：212K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF330SK60D3G
VCES = 600V
IC = 330A @ Tc = 80°C
Buck Chopper
NPT IGBT Power Module
Application
AC and DC motor control
3
•
Q1
•
Switched Mode Power Supplies
4
Features
•
Non Punch Through (NPT) FAST IGBT
- Low voltage drop
5
1
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
2
- Low leakage current
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
High level of integration
M6 power connectors
•
•
•
Benefits
•
•
•
•
•
•
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
520
330
800
±20
1560
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 125°C
RBSOA Reverse Bias Safe Operating Area
800A @ 520V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
1 - 5
www.microsemi.com
APTGF330SK60D3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
500
1.95 2.45
2.2
µA
Tj = 25°C
V
GE = 15V
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
V
IC = 400A
Tj = 125°C
VGE = VCE , IC = 7.5 mA
VGE = 20V, VCE = 0V
5.0
5.8
6.5
V
nA
1200
IGES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
VGE = 0V ; VCE = 25V
f = 1MHz
Min Typ Max Unit
Cies
Cres
Input Capacitance
Reverse Transfer Capacitance
18
nF
1.6
VGE=15V, IC=400A
VCE=300V
QG
Gate charge
1.3
µC
Inductive Switching (25°C)
Td(on)
Tr
Turn-on Delay Time
Rise Time
150
72
V
GE = ±15V
ns
VBus = 300V
IC = 400A
RG = 8Ω
Inductive Switching (125°C)
VGE = ±15V
Td(off) Turn-off Delay Time
530
Tf
Td(on)
Tr
Fall Time
40
160
75
Turn-on Delay Time
Rise Time
ns
V
Bus = 300V
Td(off) Turn-off Delay Time
550
50
IC = 400A
RG = 8Ω
Tf
Fall Time
V
GE = ±15V
Eon
Turn on Energy
Tj = 125°C
Tj = 125°C
18
17
VBus = 300V
IC = 400A
RG = 8Ω
mJ
A
Eoff
Isc
Turn off Energy
Short Circuit data
V
GE ≤15V ; VBus = 360V
1800
tp ≤ 10µs ; Tj = 125°C
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
VRRM
IRRM
IF
600
V
µA
A
Tj = 25°C
750
1000
VR = 600V
Tj = 125°C
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
400
1.25
1.2
150
250
27
44
5.6
9.2
IF = 400A
VGE = 0V
1.6
VF
Diode Forward Voltage
V
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
IF = 400A
VR = 300V
di/dt =4400A/µs
Qrr
Err
2 - 5
www.microsemi.com
APTGF330SK60D3G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.08
0.15
RthJC
Junction to Case Thermal Resistance
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
2500
-40
-40
-40
3
150
125
125
5
5
350
°C
Operating Case Temperature
For terminals
To Heatsink
M6
M6
Torque Mounting torque
N.m
g
3
Wt
Package Weight
D3 Package outline (dimensions in mm)
1°
A
DÉTAIL A
3 - 5
www.microsemi.com
APTGF330SK60D3G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
800
800
600
400
200
0
TJ = 125°C
VGE=15V
TJ=25°C
600
VGE=20V
VGE=12V
TJ=125°C
400
200
0
VGE=9V
0
0.5
1
1.5
2
2.5
3
3.5
0
1
2
3
4
5
VCE (V)
V
CE (V)
Energy losses vs Collector Current
Transfert Characteristics
800
600
400
200
0
40
30
20
10
0
VCE = 300V
GE = 15V
G = 8 Ω
TJ = 125°C
Eon
V
R
Eoff
Err
TJ=125°C
TJ=25°C
0
200
400
600
800
5
6
7
8
9
10
11
12
I
C (A)
V
GE (V)
Switching Energy Losses vs Gate Resistance
Reverse Safe Operating Area
50
1000
800
600
400
200
0
VCE = 300V
Eon
V
GE =15V
C = 400A
TJ = 125°C
40
30
20
10
0
I
Eoff
Err
VGE=15V
TJ=125°C
RG=8 Ω
0
100 200 300 400 500 600
CE (V)
0
10
20
30
40
V
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.9
0.7
IGBT
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
4 - 5
www.microsemi.com
APTGF330SK60D3G
Operating Frequency vs Collector Current
Forward Characteristic of diode
70
60
50
40
30
20
10
0
800
VCE=300V
D=50%
RG=8Ω
600
ZVS
TJ=125°C
TC=75°C
400
TJ=125°C
ZCS
hard
switching
200
TJ=25°C
0
0
0.3
0.6
0.9
F (V)
1.2
1.5
0
100
200
IC (A)
300
400
500
V
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.1
0.08
0.06
0.04
0.02
0
Diode
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
5 - 5
www.microsemi.com
相关型号：
APTGF350DA60
Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel, MODULE-5
MICROSEMI
©2020 ICPDF网 联系我们和版权申明