APTGF50TDU120PG [MICROSEMI]
Triple dual Common Source NPT IGBT Power Module; 三重双共源NPT IGBT功率模块
| 型号： | APTGF50TDU120PG |
| 厂家： | 
Microsemi |
| 描述： | Triple dual Common Source NPT IGBT Power Module |
| 文件： | 总7页 (文件大小：287K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF50TDU120PG
Triple dual Common Source
VCES = 1200V
IC = 50A @ Tc = 80°C
NPT IGBT Power Module
Application
•
•
•
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
C1
C3
C5
G1
G3
G5
Features
E1
E2
E3
E4
E5
E6
•
Non Punch Through (NPT) FAST IGBT
E1/E2
E3/E4
E5/E6
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
G6
G2
G4
C2
C4
C6
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
•
•
Kelvin emitter for easy drive
Very low stray inductance
-
-
Symmetrical design
Lead frames for power connections
•
Benefits
•
High level of integration
Outstanding performance at high frequency
operation
C 1
C 3
C 5
•
•
•
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
G1
E1
G3
E3
G5
E5
E1/E2
E3/E4
E5/E6
E2
E4
G4
E6
G6
•
•
•
Very low (12mm) profile
G2
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
C 2
C 4
C 6
•
RoHS compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
Tc = 25°C
Tc = 80°C
Tc = 25°C
75
IC
Continuous Collector Current
A
50
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
150
±20
V
W
Tc = 25°C
Tj = 150°C
Maximum Power Dissipation
312
RBSOA Reverse Bias Safe Operating Area
100A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 - 7
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APTGF50TDU120PG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGE = 0V
Tj = 25°C
Tj = 125°C
Tj = 25°C
250
ICES
Zero Gate Voltage Collector Current
µA
VCE = 1200V
500
3.7
3.2
4.0
VGE =15V
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
V
IC = 50A
Tj = 125°C
VGE = VCE, IC = 1 mA
VGE = 20 V, VCE = 0V
4.5
6.5
100
V
nA
IGES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Qg
Input Capacitance
3450
VGE = 0V
VCE = 25V
f = 1MHz
pF
Output Capacitance
330
220
330
35
Reverse Transfer Capacitance
Total gate Charge
VGS = 15V
VBus = 600V
IC = 50A
nC
Qge
Qgc
Gate – Emitter Charge
Gate – Collector Charge
200
35
Inductive Switching (25°C)
VGE = 15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
65
320
30
VBus = 600V
IC = 50A
ns
RG = 5 Ω
Inductive Switching (125°C)
35
VGE = ±15V
65
360
40
VBus = 600V
ns
IC = 50A
Tf
Fall Time
RG = 5 Ω
VGE = ±15V
Tj = 125°C
VBus = 600V
Eon
Turn-on Switching Energy
6.9
mJ
IC = 50A
Eoff
Turn-off Switching Energy
Tj = 125°C
RG = 5 Ω
3.05
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
Maximum Peak Repetitive Reverse Voltage
1200
V
µA
A
Tj = 25°C
VR=1200V
250
500
Maximum Reverse Leakage Current
Tj = 125°C
DC Forward Current
Tc = 70°C
IF = 60A
60
2.0
2.3
1.8
2.5
VF
Diode Forward Voltage
IF = 120A
IF = 60A
V
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
400
470
1200
4000
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 60A
VR = 800V
di/dt =200A/µs
Qrr
nC
2 - 7
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APTGF50TDU120PG
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.4
0.9
RthJC
Junction to Case Thermal Resistance
°C/W
V
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
3
150
125
100
5
°C
Operating Case Temperature
Torque Mounting torque
Wt
To heatsink
M6
N.m
g
Package Weight
250
SP6-P Package outline (dimensions in mm)
5 places (3:1)
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
3 - 7
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APTGF50TDU120PG
Typical Performance Curve
Output Characteristics (VGE=10V)
Output characteristics (VGE=15V)
50
200
160
120
80
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
TJ=25°C
40
TJ=25°C
30
20
TJ=125°C
TJ=125°C
10
40
0
0
0
2
4
6
8
0
1
2
3
4
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Gate Charge
Transfer Characteristics
300
250
200
150
100
50
18
16
14
12
10
8
6
4
2
0
VCE =240V
250µs Pulse Test
< 0.5% Duty cycle
IC = 50A
TJ = 25°C
TJ=25°C
VCE=600V
VCE =960V
TJ=125°C
TJ=25°C
0
0
50
100 150 200 250 300 350
Gate Charge (nC)
0
4
8
12
16
VGE, Gate to Emitter Voltage (V)
On state Voltage vs Junction Temperature
On state Voltage vs Gate to Emitter Volt.
9
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
TJ = 25°C
250µs Pulse Test
250µs Pulse Test
Ic=100A
< 0.5% Duty cycle
< 0.5% Duty cycle
VGE = 15V
Ic=100A
Ic=50A
Ic=50A
Ic=25A
Ic=25A
9
10
11
12
13
14
15
16
-50 -25
0
25
50
75
100 125
VGE, Gate to Emitter Voltage (V)
TJ, Junction Temperature (°C)
DC Collector Current vs Case Temperature
Breakdown Voltage vs Junction Temp.
90
80
70
60
50
40
30
20
10
0
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25
0
25
50
75 100 125
-50 -25
0
25 50
75 100 125 150
TC, Case Temperature (°C)
TJ, Junction Temperature (°C)
4 - 7
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APTGF50TDU120PG
Turn-On Delay Time vs Collector Current
Turn-Off Delay Time vs Collector Current
45
40
35
30
25
400
VCE = 600V
VGE=15V,
TJ=125°C
R
G = 5Ω
350
VGE = 15V
300
VGE=15V,
TJ=25°C
250
VCE = 600V
RG = 5Ω
200
0
25
50
75
100
125
0
25
50
75
100
125
I
CE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
Current Fall Time vs Collector Current
180
140
100
60
50
40
30
20
VCE = 600V
RG = 5Ω
TJ = 125°C
VGE=15V
TJ = 25°C
VCE = 600V, VGE = 15V, RG = 5Ω
20
0
25
50
75
100
125
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
28
24
20
16
12
8
8
6
4
2
0
VCE = 600V
TJ=125°C,
GE=15V
VCE = 600V
TJ = 125°C
R
G = 5Ω
V
VGE = 15V
R
G = 5Ω
TJ = 25°C
TJ=25°C,
VGE=15V
4
0
0
25
50
75
100
125
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Junction Temp.
Switching Energy Losses vs Gate Resistance
8
6
4
2
0
18
16
14
12
10
8
VCE = 600V
Eon, 50A
VCE = 600V
VGE = 15V
TJ= 125°C
VGE = 15V
RG = 5Ω
Eon, 50A
Eoff, 50A
Eoff, 50A
6
Eon, 25A
Eon, 25A
Eoff, 25A
4
2
Eoff, 25A
0
0
10
20
30
40
50
0
25
50
75
100
125
Gate Resistance (Ohms)
TJ, Junction Temperature (°C)
5 - 7
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APTGF50TDU120PG
Capacitance vs Collector to Emitter Voltage
Reverse Bias Safe Operating Area
120
10000
1000
100
Cies
100
80
60
40
20
0
Coes
Cres
0
10
20
30
40
50
0
400
800
1200
V
CE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.45
0.4
0.9
0.35
0.3
0.7
0.25
0.2
0.5
0.3
0.15
0.1
0.1
0.05
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Operating Frequency vs Collector Current
120
VCE = 600V
D = 50%
RG = 5Ω
TJ = 125°C
TC= 75°C
100
80
60
40
20
0
ZVS
ZCS
Hard
switching
10
20
30
40
50
60
IC, Collector Current (A)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
6 - 7
www.microsemi.com
APTGF50TDU120PG
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
7 - 7
www.microsemi.com
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