APTGT200DA60TG [MICROSEMI]
Boost chopper Trench + Field Stop IGBT Power Module; 升压斩波沟道+场截止IGBT功率模块![APTGT200DA60TG](http://pdffile.icpdf.com/pdf1/p00107/img/icpdf/APTGT200DA60TG_577280_icpdf.jpg)
型号: | APTGT200DA60TG |
厂家: | ![]() |
描述: | Boost chopper Trench + Field Stop IGBT Power Module |
文件: | 总5页 (文件大小:257K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
APTGT200DA60TG
VCES = 600V
Boost chopper
Trench + Field Stop IGBT®
IC = 200A @ Tc = 80°C
Application
•
•
•
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
NT C2
VBUS
VBUS SENSE
CR1
Features
•
Trench + Field Stop IGBT® Technology
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
OUT
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Q2
G2
E2
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
•
•
Kelvin emitter for easy drive
Very low stray inductance
NT C1
0/VBUS
-
-
Symmetrical design
Lead frames for power connections
•
•
High level of integration
Internal thermistor for temperature monitoring
Benefits
G2
•
•
•
•
•
•
•
•
Stable temperature behavior
OUT
E2
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
OUT
VBUS
0/VBUS
E2
G2
NTC2
NTC1
VBUS
SENSE
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
290
200
400
±20
625
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 150°C
RBSOA Reverse Bias Safe Operating Area
400A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 - 5
www.microsemi.com
APTGT200DA60TG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
250
1.9
µA
Tj = 25°C
Tj = 150°C
1.5
1.7
5.8
VGE =15V
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES
V
IC = 200A
VGE = VCE , IC = 2 mA
VGE = 20V, VCE = 0V
5.0
6.5
400
V
nA
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
12.3
nF
Output Capacitance
0.8
0.4
115
45
225
55
130
50
300
70
1
Reverse Transfer Capacitance
Inductive Switching (25°C)
VGE = ±15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
ns
VBus = 300V
IC = 200A
RG = 2Ω
Inductive Switching (150°C)
VGE = ±15V
ns
VBus = 300V
IC = 200A
Tf
Fall Time
RG = 2Ω
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
VGE = ±15V
VBus = 300V
IC = 200A
Eon
Turn on Energy
mJ
mJ
1.8
5.7
7
Eoff
Turn off Energy
RG = 2Ω
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
250
500
IRM
Maximum Reverse Leakage Current
VR=600V
µA
IF
DC Forward Current
200
1.6
1.5
A
V
IF = 200A
VGE = 0V
2
VF
Diode Forward Voltage
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
130
225
9
19
2.3
4.7
trr
Qrr
Er
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
IF = 200A
VR = 300V
di/dt =2200A/µs
2 - 5
www.microsemi.com
APTGT200DA60TG
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.24
°C/W
0.4
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
2.5
V
175
125
100
4.7
°C
Operating Case Temperature
Torque Mounting torque
Wt
To Heatsink
M5
N.m
g
Package Weight
160
SP4 Package outline (dimensions in mm)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
3 - 5
www.microsemi.com
APTGT200DA60TG
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
400
400
350
300
250
200
150
100
50
VGE=19V
TJ=25°C
TJ = 150°C
350
TJ=125°C
300
VGE=13V
VGE=15V
TJ=150°C
250
200
150
VGE=9V
100
50
0
TJ=25°C
0
0
0.5
1
1.5
2
2.5
3
3.5
0
0.5
1
1.5
2
2.5
3
VCE (V)
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
400
350
300
250
200
150
100
50
14
12
10
8
VCE = 300V
VGE = 15V
Eoff
TJ=25°C
R
G = 2Ω
TJ = 150°C
Er
6
TJ=125°C
4
TJ=150°C
2
Eon
TJ=25°C
10
0
0
0
50 100 150 200 250 300 350 400
5
6
7
8
9
11
12
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
16
500
400
300
200
100
0
VCE = 300V
VGE =15V
I
C = 200A
12
8
Eoff
TJ = 150°C
Eon
Er
VGE=15V
TJ=150°C
RG=2Ω
4
Eon
0
0
2
4
6
8
10
12
14
0
100 200 300 400 500 600 700
Gate Resistance (ohms)
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.25
0.2
IGBT
0.7
0.15
0.1
0.5
0.3
0.05
0.1
0.05
Single Pulse
0.01
0
0.00001
0.0001
0.001
0.1
1
10
Rectangular Pulse Duration in Seconds
4 - 5
www.microsemi.com
APTGT200DA60TG
Operating Frequency vs Collector Current
Forward Characteristic of diode
400
120
100
80
60
40
20
0
VCE=300V
D=50%
350
300
250
ZVS
RG=2Ω
ZCS
TJ=150°C
Tc=85°C
200
TJ=125°C
150
TJ=150°C
100
Hard
switching
50
TJ=25°C
0
0
0.4
0.8
1.2
VF (V)
1.6
2
2.4
0
50
100
150
C (A)
200
250
I
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.45
0.4
0.35
0.3
Diode
0.9
0.7
0.25
0.2
0.15
0.1
0.5
0.3
0.1
0.05
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
5 - 5
www.microsemi.com
相关型号:
©2020 ICPDF网 联系我们和版权申明