APTGT50H170TG [MICROSEMI]
Full - Bridge Trench + Field Stop IGBT Power Module; 全 - 桥沟道+场站IGBT功率模块
| 型号： | APTGT50H170TG |
| 厂家： | 
Microsemi |
| 描述： | Full - Bridge Trench + Field Stop IGBT Power Module |
| 文件： | 总5页 (文件大小：259K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT100A170TG
Phase leg
Trench + Field Stop IGBT®
VCES = 1700V
IC = 100A @ Tc = 80°C
Application
VBUS
NTC2
•
•
•
•
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Q1
G1
E1
Features
•
Trench + Field Stop IGBT® Technology
OUT
-
-
-
-
-
-
-
-
Low voltage drop
Q2
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
G2
E2
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
0/VBUS
NTC1
•
•
Kelvin emitter for easy drive
Very low stray inductance
-
-
Symmetrical design
Lead frames for power connections
•
•
High level of integration
Internal thermistor for temperature monitoring
G2
Benefits
OUT
OUT
E2
•
•
•
•
•
•
•
•
Stable temperature behavior
Very rugged
VBUS
0/VBUS
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
E1
G1
E2
G2
NTC2
NTC1
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
1700
Unit
VCES
Collector - Emitter Breakdown Voltage
V
TC = 25°C
TC = 80°C
TC = 25°C
150
100
200
±20
560
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C 200A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTGT100A170TG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1700V
250
2.4
µA
Tj = 25°C
Tj = 125°C
2.0
2.4
5.8
VGE = 15V
VCE(sat) Collector Emitter Saturation Voltage
V
IC = 100A
VGE(th) Gate Threshold Voltage
IGES
VGE = VCE , IC = 2mA
VGE = 20V, VCE = 0V
5.0
6.5
400
V
nA
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
9
nF
Output Capacitance
0.36
0.3
370
40
650
180
400
50
Reverse Transfer Capacitance
Inductive Switching (25°C)
VGE = 15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
ns
VBus = 900V
IC = 100A
RG = 4.7 Ω
Inductive Switching (125°C)
VGE = 15V
ns
VBus = 900V
800
IC = 100A
Tf
Fall Time
300
RG = 4.7 Ω
VGE = 15V
Tj = 125°C
VBus = 900V
Eon
Turn-on Switching Energy
32
31
mJ
IC = 100A
Tj = 125°C
RG = 4.7 Ω
Eoff
Turn-off Switching Energy
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1700
V
Tj = 25°C
VR=1700V
250
500
IRM
Maximum Reverse Leakage Current
µA
Tj = 125°C
IF
DC Forward Current
Tc = 80°C
100
1.8
1.9
385
490
25
42
11
21
A
V
Tj = 25°C
2.2
VF
Diode Forward Voltage
IF = 100A
Tj = 125°C
Tj = 25°C
Tj = 125°C
trr
Reverse Recovery Time
ns
IF = 100A
Tj = 25°C
VR = 900V
Qrr
Er
Reverse Recovery Charge
Reverse Recovery Energy
µC
mJ
Tj = 125°C
Tj = 25°C
Tj = 125°C
di/dt =1000A/µs
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APTGT100A170TG
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.22
RthJC
Junction to Case Thermal Resistance
°C/W
0.39
VISOL
TJ
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
3500
-40
-40
-40
2.5
V
150
125
100
4.7
°C
TSTG
TC
Operating Case Temperature
Torque Mounting torque
Wt
To Heatsink
M5
N.m
g
Package Weight
160
SP4 Package outline (dimensions in mm)
ALL DIMENSIONSMARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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APTGT100A170TG
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
200
160
120
80
200
175
150
125
100
75
VGE=20V
TJ = 125°C
TJ=25°C
TJ=125°C
VGE=13V
VGE=15V
50
VGE=9V
40
25
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
VCE (V)
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
200
100
80
60
40
20
0
VCE = 900V
TJ=25°C
175
150
125
100
75
Eon
V
GE = 15V
G = 4.7Ω
TJ = 125°C
R
TJ=125°C
Eoff
TJ=125°C
50
Er
25
0
0
25 50 75 100 125 150 175 200
C (A)
5
6
7
8
9
10 11 12 13
I
V
GE (V)
Switching Energy Losses vs Gate Resistance
100
Reverse Bias Safe Operating Area
250
200
150
100
50
VCE = 900V
87.5
VGE =15V
Eon
75
62.5
50
IC = 100A
TJ = 125°C
Eoff
Er
37.5
25
VGE=15V
TJ=125°C
RG=4.7Ω
12.5
0
0
0
400
800
1200
1600
2000
0
5
10 15 20 25 30 35 40
Gate Resistance (ohms)
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.25
0.2
IGBT
0.9
0.7
0.15
0.1
0.5
0.3
0.05
0
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
4 - 5
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APTGT100A170TG
Operating Frequency vs Collector Current
Forward Characteristic of diode
25
20
15
10
5
200
175
150
125
100
75
VCE=900V
D=50%
TJ=25°C
RG=4.7 Ω
TJ=125°C
ZVS
TC=75°C
ZCS
TJ=125°C
TJ=125°C
50
hard
switching
25
0
0
0
0.5
1
1.5
VF (V)
2
2.5
3
0
20
40
60
IC (A)
80 100 120 140
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
0.9
0.7
Diode
0.35
0.3
0.25
0.2
0.5
0.3
0.15
0.1
0.1
0.05
0
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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