APTLGF280U120T [MICROSEMI]

Insulated Gate Bipolar Transistor;


型号：	APTLGF280U120T
厂家：	Microsemi
描述：	Insulated Gate Bipolar Transistor 栅驱动接口集成电路
文件：	总8页 (文件大小：696K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

APTLGF280U120T

Zero Voltage switching

Single switch

NPT IGBT Power Module

V_CES= 1200V

I_C= 280A @ Tc = 80°C

Application

ISOLATED

AUXILIARY

+12V

GND

•

Wide output range converters

Induction heating

X-Ray power supplies

ZVS-PWM Uninterruptible Power Supplies

High frequency, high density, high efficiency

power supplies

POWER

SUPPLY

UNDERVOLTAGE

LOCKOUT

SIGNAL

PROCESSING

CIRCUIT

HIGH

FREQUENCY

TRANSFORMER

DRIVER

INH

HIGH

FORCED

START UP

•

Welder

FREQUENCY

CIRCUIT

TRANSFORMER

NTC1

Features

NTC2

•

Integrated power and driver circuits

Integrated DC/DC converter

80kHz switching frequency without high

switching losses using ZVS technique

low EMI and RFI

isolated input signals

Very low stray inductance

Internal thermistor for temperature monitoring

High level of integration

•

Benefits

•

Outstanding performance at high frequency

operation

J10

•

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals for signal and M5 for power

for easy PCB mounting

For all ratings, C1 & C2 are connected together, same for E1 & E2.

Absolute maximum ratings

Symbol

Parameter

Max ratings

1200

400

Unit

V_CE

Collector - Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

T_C= 25°C

T_C= 80°C

I_C

280

800

1900

1040

I_CM

P_D

IGBT Total Power Dissipation

Diode Total Power Dissipation

T_C= 25°C

F_S(Max)Maximum Operating Frequency

kHz

V_AUXIsolated Auxiliary Power Supply Voltage

Input Signal Voltage

Q, Q

13.6

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

1 - 8

APT website – http://www.advancedpower.com

APTLGF280U120T

Static Electrical Characteristics

Symbol

Characteristic

Test Conditions

Min Typ Max Unit

BV_CES

Collector Emitter Breakdown Voltage Ic=2mA

1200

T_j= 25°C

T_j= 125°C

V_CC= 800V, V_GE= 0V

2.7

3.3

3.2

3.9

3000 µA

Q or Q High

I_C= 400A

V_CE(on)

I_CES

Collector Emitter on Voltage

Zero Gate Voltage Collector Current

Dynamic Electrical Characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit

C_oes

Output Capacitance

3680

Q or Q = 0V

V_CE= 25V, f = 1MHz

C_res

Reverse Transfer Capacitance

Forced Startup Voltage Level

1760

See figures 8, 9 & 11

See figures 8 & 9

See figures 4 & 10

E₀-S₀

-0.6

µs

P_W(E₀-S₀) Forced Startup Pulse Width

INH

Inhibit Voltage Level (Active Level)

V_CC= 600V

I_C= 400A

T_j= 25°C

15.5

T_j= 125°C

T_j= 25°C

T_j= 125°C

E_off

Turn-off Switching Energy

V_CC= 600V

I_C= 200A

Freewheeling Diode Characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit

V_RRMMax. Peak Repetitive Reverse Voltage

1200

I_F= 400A

I_F= 800A

I_F= 400A

Duty cycle=50%

2.5

V_F

Diode Forward Voltage

2.7

2.0

T_j= 150°C

T_C= 60°C

I_F(av)

t_rr

Maximum Average Forward Current

Reverse Recovery Time

400

I_F= 400A

T_j= 25°C

T_j= 100°C

T_j= 25°C

T_j= 100°C

V_R= 650V

di/dt=800A/µs

I_F= 400A

V_R= 650V

di/dt=800A/µs

130

µC

Q_rr

Reverse recovery Charge

14.6

Driver Characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit

V_AUXIsolated Auxiliary Power SupplyVoltage

I_AUX

Isolated Auxiliary Power Supply Current

1.5

Low level

High level

-0.6

13.6

Blocking Signal Input Voltage

Q, Q

Blocking Signal Input Current

IQ, IQ

T_d(on)Turn-on Delay Time

T_d(off)Turn-off Delay Time

See figure 5

See figure 4

500

2 - 8

APT website – http://www.advancedpower.com

APTLGF280U120T

Thermal and package characteristics

Symbol Characteristic

Min Typ Max Unit

IGBT

Diode

0.065

0.12

R_thJC

Junction to Case

°C/W

RMS Isolation Voltage, any terminal to case

t =1 min, I isol<1mA, 50/60Hz

V_ISOL

2500

T_J

T_STG

T_C

Operating junction temperature range

Storage Temperature Range

Operating Case Temperature

-40

150

125

100

3.5

470

°C

To heatsink

For terminals

Torque Mounting torque

Wt Package Weight

N.m

Temperature sensor NTC

Symbol Characteristic

Min Typ Max Unit

R₂₅

Resistance @ 25°C

4080

kΩ

B _25/85T₂₅= 298.16 K

R₂₅

R_T

T: Thermistor temperature

R_T: Thermistor value at T

⁄

≈

’

∆

exp B

−

…

25/ 85

∆

T₂₅

◊

Package outline

3 - 8

APT website – http://www.advancedpower.com

APTLGF280U120T

NTC Characteristics

R@25°C = 68k ±5%

Ω

Temperature R(T)/R@25°C Tolerance

(°C)

-30

-25

-20

-15

-10

-5

(%)

10,9

9,1

7,5

6,1

4,9

3,8

2,9

2,1

1,4

0,9

0,4

19,33

14,12

10,41

7,758

5,834

4,426

3,387

2,614

-30

-25

-20

-15

-10

Temperature (°C)

Figure 1, Normalized NTC Characteristics -30°C to 25°C

-5

2,033

1,593

1,258

0,8

0,6

0,4

0,2

0,8004

0,6448

0,5228

0,4264

0,3497

0,2885

0,2392

0,1994

0,1671

0,1406

0,1189

0,101

0,4

0,8

1,3

1,8

2,3

2,9

3,5

4,1

4,8

5,5

6,2

6,9

7,6

8,3

9,1

9,8

10,6

11,3

12,1

12,9

Temperature (°C)

Figure 2, Normalized NTC Characteristics 25°C to 125°C

105

115

125

0,08617

0,07381

0,06347

0,0548

0,04748

0,04129

0,03603

0,03155

100

105

110

115

120

125

Table 1, NTC Characteristics

-30 -20 -10

10 20 30 40 50 60 70 80 90 100 110 120

Temperature (°C)

Figure 3, NTC Tolerance vs Temperature

4 - 8

APT website – http://www.advancedpower.com

APTLGF280U120T

Figure 4

Turn-Off Delay Time

Figure 5

Turn-On Delay Time

100

VBUS

C = 47nF

T_J=125°C

without C

MODULE 1

MODULE 2

OUT

T_J=25°C

Without C

without C

0/VBUS

VBUS

T_J=125°C with

C=47nF

MODULE 1

OUT

T_J=25°C with

C=47nF

MODULE 2

0/VBUS

50 100 150 200 250 300 350 400

100 150 200 250 300 350

I_CE, Collector to Emitter Current (A)

I_C, Collector Current (A)

Figure 6: Turn-Off Energy losses vs Collector Current

Figure 7: Operating Frequency vs Collector Current

5 - 8

APT website – http://www.advancedpower.com

APTLGF280U120T

Figure 8

Full Voltage Startup Circuit

•

After power is applied and/or after an inhibit (INH) signal (active low) has been applied and removed, the

APTLGF280U120T module requires a forced startup signal between E₀-S₀, forcing startup under full voltage

conditions. The forced startup signal must be a single pulse and cannot be repeated with a frequency greater than 1 kHz.

The duration of this pulse must be between 1 & 4µsec and must be synchronized with input signal Q being high. The

startup timing diagram is shown in figure 9.

•

The circuit, shown in figure 8 is proposed as an example for generating the startup pulse for inputs E0 and S0. The

signal is initiated by the falling edge of a voltage applied to the forced startup signal input. The circuit will synchronize

the forced startup signal with Q and forcing the upper switch to turn ON.

•

The startup signal, between E₀-S₀, may also be implemented by a negative pulse synchronized with input signal Q

being low and forcing the lower switch to turn ON. Examples of both startup sequences being used in the startup of a

full – bridge configuration is shown in figure 11.

Figure 9

Startup Pulse

Timing Diagram

6 - 8

APT website – http://www.advancedpower.com

APTLGF280U120T

Figure 10: Inhibit Circuit for APTLGF280U120T

•

The APTLGF280U120T modules can be protected against over currents by the inhibit circuit shown above.

This circuit can be implemented by one of several functions:

Output current measurement with Hall sensor.

Rectification of the measured value without offset.

Comparison of this value to a reference value (inhibit level fixed by potentiometer).

Memorization of the inhibit order.

Inhibit signal adaption.

•

When the inhibit order is given, the default is latched and the output of the circuit connected to the INH (pin5) input

of the APTLGF280U120T module switches to a low level (the active level for INH). Then the LED (D9) illuminates.

•

Pushbutton switch (S1) provides a source for the re-initialization of the Inhibit circuit.

For more information see APT9904 and APT9601 application notes.

7 - 8

APT website – http://www.advancedpower.com

APTLGF280U120T

Q₁

Q₂

INH_1/2

E₀-S_{0 1/2}

Q₃

Q₄

INH_3/4

E₀-S_{0 3/4}

Figure 11: example of input signal for 4 x APTLGF280U120T modules connected in a Full Bridge configuration

APT reserves the right to change, without notice, the specifications and information contained herein

APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

8 - 8

APT website – http://www.advancedpower.com

APTLGF280U120T [MICROSEMI]

相关型号：

APTLGF300A1208G

APTLGF350A608G

APTLGF70U120T

APTLGF75U120T

APTLGF75U120T

APTLGL325A1208G

APTLGT300A1208G

APTLGT400A608G

APTLM50H10FRT

APTLM50HM75FRT

APTM08TAM04P

APTM08TAM04PG