APTM10DAM02G [MICROSEMI]
Boost chopper MOSFET Power Module; 升压斩波MOSFET功率模块
| 型号： | APTM10DAM02G |
| 厂家： | 
Microsemi |
| 描述： | Boost chopper MOSFET Power Module |
| 文件： | 总6页 (文件大小：267K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM10DAM02G
VDSS = 100V
RDSon = 2.25mΩ typ @ Tj = 25°C
MOSFET Power Module
ID = 495A @ Tc = 25°C
Application
VBUS
CR1
•
•
•
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
OUT
Features
Q2
•
Power MOS V® MOSFETs
-
-
-
-
-
Low RDSon
G2
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
S2
0/VBUS
•
•
Kelvin source for easy drive
Very low stray inductance
-
-
Symmetrical design
M5 power connectors
•
High level of integration
VBUS
0/VBUS
OUT
Benefits
S2
G2
•
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
100
Unit
VDSS
Drain - Source Breakdown Voltage
V
Tc = 25°C
495
ID
Continuous Drain Current
A
Tc = 80°C
370
IDM
VGS
RDSon
PD
Pulsed Drain current
1900
±30
Gate - Source Voltage
V
mΩ
W
Drain - Source ON Resistance
Maximum Power Dissipation
2.5
Tc = 25°C
1250
IAR
EAR
EAS
Avalanche current (repetitive and non repetitive)
100
A
Repetitive Avalanche Energy
50
mJ
Single Pulse Avalanche Energy
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTM10DAM02G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 100V Tj = 25°C
VGS = 0V,VDS = 80V
VGS = 10V, ID = 200A
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
400
2000
2.5
4
±400
IDSS
Zero Gate Voltage Drain Current
µA
Tj = 125°C
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
IGS S
2.25
mΩ
V
nA
2
Gate – Source Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
40
VGS = 0V
VDS = 25V
f = 1MHz
nF
Output Capacitance
15.7
5.9
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
1360
240
VGS = 10V
VBus = 50V
ID = 400A
nC
720
Inductive switching @ 125°C
VGS = 15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
160
240
500
160
VBus = 66V
ns
ID = 400A
RG = 1.25Ω
Tf
Fall Time
Inductive switching @ 25°C
VGS = 15V, VBus = 66V
ID = 400A, RG =1.25Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 66V
ID = 400A, RG = 1.25Ω
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
2.2
mJ
mJ
2.41
2.43
2.56
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
200
V
µA
A
Tj = 25°C
Tj = 125°C
Tc = 80°C
750
1000
VR=200V
DC Forward Current
400
IF = 400A
IF = 800A
IF = 400A
1
VF
Diode Forward Voltage
V
1.4
0.9
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
60
110
800
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 400A
VR = 133V
di/dt =800A/µs
Qrr
nC
3360
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2 - 6
APTM10DAM02G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
Diode
0.1
RthJC
Junction to Case Thermal Resistance
°C/W
V
0.14
VISOL
TJ
RMS Isolation Voltage, any terminal to case t =1 min, I Isol<1mA, 50/60Hz
Operating junction temperature range
2500
-40
-40
-40
3
150
125
100
5
°C
TSTG
Storage Temperature Range
TC
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
g
2
3.5
280
Wt
Package Weight
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3 - 6
APTM10DAM02G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.1
0.9
0.08
0.06
0.04
0.02
0
0.7
0.5
0.3
Single Pulse
0.1
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
2500
2000
1500
1000
500
480
400
320
240
160
80
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
VGS=15V, 10V & 9V
8V
7V
TJ=25°C
6V
TJ=125°C
TJ=-55°C
0
0
0
4
8
12 16 20 24 28
0
1
2
3
4
5
6
7
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
500
RDS(on) vs Drain Current
1.2
1.1
1
Normalized to
GS=10V @ 200A
V
400
300
200
100
0
VGS=10V
VGS=20V
0.9
0.8
0
100
200
300
400
500
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
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4 - 6
APTM10DAM02G
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
1.15
1.10
1.05
1.00
0.95
0.90
VGS=10V
ID= 200A
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10000
100µs
limited by
1000
100
10
RDSon
1ms
10ms
Single pulse
TJ=150°C
TC=25°C
1
-50 -25
0
25 50 75 100 125 150
1
10
VDS, Drain to Source Voltage (V)
100
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
16
ID=400A
VDS=20V
14
Ciss
TJ=25°C
12
VDS=50V
10
Coss
Crss
VDS=80V
10000
1000
8
6
4
2
0
0
400
800
1200 1600 2000
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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5 - 6
APTM10DAM02G
Delay Times vs Current
Rise and Fall times vs Current
300
250
200
150
100
50
600
500
400
300
200
100
0
tr
td(off)
VDS=66V
RG=1.25Ω
TJ=125°C
L=100µH
tf
VDS=66V
RG=1.25Ω
TJ=125°C
L=100µH
td(on)
0
50
150 250 350 450 550 650
50
150 250 350 450 550 650
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
9
8
7
6
5
4
3
2
1
5
4
3
2
1
0
VDS=66V
ID=400A
TJ=125°C
L=100µH
VDS=66V
Eoff
RG=1.25Ω
TJ=125°C
L=100µH
Eoff
Eon
Eon
Eoff
50
150 250 350 450 550 650
0
2.5
5
7.5
10
12.5
15
ID, Drain Current (A)
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
60
50
40
30
20
10
0
1000
100
10
TJ=150°C
ZCS
ZVS
TJ=25°C
Hard
VDS=66V
D=50%
RG=1.25Ω
TJ=125°C
TC=75°C
switching
1
100
200
300
400
500
0.3
0.5
0.7
0.9
1.1
1.3
1.5
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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