APTM120TA57FPG [MICROSEMI]
Triple phase leg MOSFET Power Module; 三重相桥臂MOSFET功率模块
| 型号： | APTM120TA57FPG |
| 厂家： | 
Microsemi |
| 描述： | Triple phase leg MOSFET Power Module |
| 文件： | 总6页 (文件大小：292K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM120TA57FPG
VDSS = 1200V
Triple phase leg
RDSon = 570mΩ typ @ Tj = 25°C
ID = 17A @ Tc = 25°C
Application
MOSFET Power Module
•
•
•
•
Welding converters
VBUS1
VBUS2
VBUS3
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
G1
S1
G3
S3
G5
S5
Features
U
V
W
•
Power MOS 7® FREDFETs
-
-
-
-
-
-
Low RDSon
Low input and Miller capacitance
Low gate charge
G2
S2
G4
G6
S4
S6
Fast intrinsic reverse diode
Avalanche energy rated
Very rugged
0/VBUS1
0/VBUS2
0/VBUS3
•
•
Kelvin source for easy drive
Very low stray inductance
-
-
Symmetrical design
Lead frames for power connections
•
High level of integration
Benefits
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
VBUS 1
VBUS 2
VBUS 3
G1
G3
S3
G5
S5
S1
0/VBUS 1
0/VBUS 2
0/VBUS 3
•
•
Very low (12mm) profile
S2
G2
S4
G4
S6
Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
Module can be configured as a three phase bridge
Module can be configured as a boost followed by a
full bridge
G6
•
•
U
V
W
•
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
V
Tc = 25°C
17
ID
Continuous Drain Current
A
Tc = 80°C
13
IDM
VGS
RDSon
PD
Pulsed Drain current
68
Gate - Source Voltage
±30
684
390
V
mΩ
W
Drain - Source ON Resistance
Maximum Power Dissipation
Tc = 25°C
IAR
EAR
EAS
Avalanche current (repetitive and non repetitive)
22
A
Repetitive Avalanche Energy
50
mJ
Single Pulse Avalanche Energy
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1 – 6
APTM120TA57FPG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 1200V
VGS = 0V,VDS = 1000V Tj = 125°C
VGS = 10V, ID = 8.5A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
Tj = 25°C
250
1000
684
5
±100
IDSS
Zero Gate Voltage Drain Current
µA
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
IGS S
570
mΩ
V
nA
3
Gate – Source Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
5155
VGS = 0V
VDS = 25V
f = 1MHz
pF
Output Capacitance
770
130
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
187
24
120
20
15
160
45
VGS = 10V
VBus = 600V
ID = 17A
nC
Gate – Source Charge
Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ns
ID = 17A
RG = 5Ω
Tf
Fall Time
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 17A, RG = 5Ω
Eon
Turn-on Switching Energy
990
685
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 17A, RG = 5Ω
1565
857
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IS
Continuous Source current
Tc = 25°C
Tc = 80°C
17
A
(Body diode)
13
1.3
18
VSD
Diode Forward Voltage
VGS = 0V, IS = - 17A
V
dv/dt Peak Diode Recovery X
V/ns
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
320
650
trr
Reverse Recovery Time
ns
IS = - 17A
VR = 600V
2
7
diS/dt = 100A/µs
Qrr
Reverse Recovery Charge
µC
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 17A di/dt ≤ 700A/µs
VR ≤ VDSS
Tj ≤ 150°C
www.microsemi.com
2 – 6
APTM120TA57FPG
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC
VISOL
TJ
Junction to Case Thermal Resistance
0.32 °C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
3
V
150
125
100
5
°C
TSTG
TC
Operating Case Temperature
Torque Mounting torque
To heatsink
M6
N.m
g
Wt
Package Weight
250
SP6-P Package outline (dimensions in mm)
5 places (3:1)
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
www.microsemi.com
3 – 6
APTM120TA57FPG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3
0.9
0.7
0.25
0.2
0.5
0.3
0.15
0.1
Single Pulse
0.01
0.1
0.05
0.05
0
0.00001
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
VDS > ID(on)xRDS (on)MAX
250µs pulse test @ < 0.5 duty cycle
VGS=15, 10 & 8V
7V
6.5V
6V
TJ=25°C
5.5V
5V
TJ=125°C
TJ=-55°C
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
9
VDS, Drain to Source Voltage (V)
V
GS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1.3
1.2
1.1
1
20
16
12
8
Normalized to
GS=10V @ 8.5A
V
VGS=10V
VGS=20V
4
0.9
0.8
0
0
10
20
30
40
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
www.microsemi.com
4 – 6
APTM120TA57FPG
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
1.15
1.10
1.05
1.00
0.95
0.90
0.85
VGS=10V
ID=8.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100µs
1ms
10ms
limited by RDSon
10
1
Single pulse
TJ=150°C
TC=25°C
0
1200
1000
-50 -25
0
25 50 75 100 125 150
1
10
100
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
14
12
10
8
ID=17A
TJ=25°C
VDS=240V
VDS=600V
VDS=960V
10000
1000
100
Ciss
6
Coss
4
2
Crss
0
0
40
80
120 160 200 240
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
www.microsemi.com
5 – 6
APTM120TA57FPG
Delay Times vs Current
td(off)
Rise and Fall times vs Current
80
60
40
20
0
180
160
140
120
100
80
60
40
20
0
VDS=800V
tf
RG=5Ω
TJ=125°C
L=100µH
VDS=800V
RG=5Ω
TJ=125°C
L=100µH
tr
td(on)
5
10
15
20
25
30
35
5
10
15
20
25
30
35
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
4
3
2
1
0
3
2.5
2
VDS=800V
ID=17A
VDS=800V
RG=5Ω
Eoff
Eon
TJ=125°C
L=100µH
TJ=125°C
L=100µH
Eoff
1.5
1
Eon
Eoff
0.5
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
100
10
225
200
175
150
125
100
75
50
25
0
ZCS
ZVS
TJ=150°C
TJ=25°C
VDS=800V
D=50%
RG=5Ω
TJ=125°C
Hard
TC=75°C
6
switching
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
4
8
12
14
16
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
6 – 6
相关型号：
APTM120UM70D-A1N
Power Field-Effect Transistor, 171A I(D), 1200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-5
ADPOW
©2020 ICPDF网 联系我们和版权申明