APTM20DAM05G [MICROSEMI]
Boost chopper MOSFET Power Module; 升压斩波MOSFET功率模块
| 型号： | APTM20DAM05G |
| 厂家： | 
Microsemi |
| 描述： | Boost chopper MOSFET Power Module |
| 文件： | 总6页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM20DAM05G
VDSS = 200V
RDSon = 5mΩ typ @ Tj = 25°C
MOSFET Power Module
ID = 317A @ Tc = 25°C
Application
VBUS
CR1
•
AC and DC motor control
•
•
Switched Mode Power Supplies
Power Factor Correction
OUT
Features
Q2
•
Power MOS 7® MOSFETs
-
-
-
-
-
Low RDSon
G2
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
S2
0/VBUS
•
•
Kelvin source for easy drive
Very low stray inductance
-
-
Symmetrical design
M5 power connectors
•
High level of integration
VBUS
0/VBUS
OUT
Benefits
•
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
S2
G2
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
200
Unit
VDSS
Drain - Source Breakdown Voltage
V
Tc = 25°C
317
ID
Continuous Drain Current
A
Tc = 80°C
237
IDM
VGS
RDSon
PD
Pulsed Drain current
1268
±30
Gate - Source Voltage
V
mΩ
W
Drain - Source ON Resistance
Maximum Power Dissipation
6
Tc = 25°C
1136
IAR
EAR
EAS
Avalanche current (repetitive and non repetitive)
89
A
Repetitive Avalanche Energy
50
mJ
Single Pulse Avalanche Energy
2500
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1 – 6
APTM20DAM05G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 200V Tj = 25°C
400
2000
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V,VDS = 160V Tj = 125°C
VGS = 10V, ID = 158.5A
VGS = VDS, ID = 10mA
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
IGS S
5
6
5
mΩ
V
nA
3
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±200
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
27.4
VGS = 0V
VDS = 25V
f = 1MHz
nF
Output Capacitance
8.72
0.38
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
448
172
188
28
56
81
VGS = 10V
VBus = 100V
ID = 300A
nC
Gate – Source Charge
Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ns
ID = 300A
RG = 1.2Ω
Tf
Fall Time
99
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 300A, RG = 1.2Ω
Eon
Turn-on Switching Energy
1852
1820
2432
2124
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 300A, RG = 1.2Ω
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
Maximum Peak Repetitive Reverse Voltage
200
V
µA
A
Tj = 25°C
Tj = 125°C
Tc = 85°C
350
Maximum Reverse Leakage Current
VR=200V
1000
DCForward Current
240
1.1
1.4
0.9
31
60
IF = 240A
IF = 480A
IF = 240A
1.15
VF
Diode Forward Voltage
V
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 240A
VR = 133V
di/dt = 800A/µs
240
1000
Qrr
nC
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2 – 6
APTM20DAM05G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
Diode
0.11
0.23
RthJC
Junction to Case Thermal Resistance
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
2500
-40
-40
-40
3
150
125
100
5
3.5
280
°C
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
g
2
Wt
Package Weight
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
www.microsemi.com
3 – 6
APTM20DAM05G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.1
0.9
0.7
0.5
0.08
0.06
0.04
0.02
0
0.3
Single Pulse
0.1
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
800
600
400
200
0
1000
800
600
400
200
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
VGS=15&10V
9V
7.5V
7V
6.5V
6V
TJ=25°C
TJ=125°C
TJ=-55°C
5.5V
0
5
10
15
20
25
2
3
V
4
5
6
7
8
9
GS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.2
1.15
1.1
320
280
240
200
160
120
80
Normalized to
VGS=10V @ 158.5A
VGS=10V
1.05
1
VGS=20V
0.95
0.9
40
0
0
100
200
300
400
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
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4 – 6
APTM20DAM05G
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID= 158.5A
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
10000
1000
100
10
1.2
1.1
1.0
0.9
0.8
0.7
0.6
limited
by RDSon
100µs
1ms
10ms
Single pulse
TJ=150°C
TC=25°C
DC line
1
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
TC, Case Temperature (°C)
V
DS, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
12
VDS=40V
VDS=100V
ID=300A
TJ=25°C
Ciss
10
8
Coss
10000
1000
100
VDS=160V
6
4
Crss
2
0
0
100
200
300
400
500
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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5 – 6
APTM20DAM05G
Delay Times vs Current
Rise and Fall times vs Current
160
140
120
100
80
90
80
70
60
50
40
30
20
10
VDS=133V
RG=1.2Ω
TJ=125°C
L=100µH
tf
td(off)
VDS=133V
RG=1.2Ω
TJ=125°C
L=100µH
tr
60
40
td(on)
450
20
0
50
150
250
350
550
50
150
250
350
450
550
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
6
5.5
5
5
4
3
2
1
0
VDS=133V
ID=300A
TJ=125°C
L=100µH
VDS=133V
RG=1.2Ω
TJ=125°C
Eon
Eoff
L=100µH
Eoff
4.5
4
Eon
3.5
3
2.5
2
Eoff
50
150
250
350
450
550
0
2.5
5
7.5
10 12.5 15
ID, Drain Current (A)
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
350
300
250
200
150
100
50
1000
100
10
TJ=150°C
ZVS
VDS=133V
ZCS
TJ=25°C
D=50%
RG=1.2Ω
TJ=125°C
TC=75°C
Hard
Switching
1
0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
30 70 110 150 190 230 270
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6 – 6
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