APTM20DHM08 [ADPOW]
Asymmetrical - Bridge MOSFET Power Module; 非对称 - 桥MOSFET功率模块
| 型号： | APTM20DHM08 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Asymmetrical - Bridge MOSFET Power Module |
| 文件： | 总6页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM20DHM08
VDSS = 200V
Asymmetrical - bridge
RDSon = 8mꢀ max @ Tj = 25°C
MOSFET Power Module
ID = 208A @ Tc = 25°C
Application
Sꢁ Welding converters
Sꢁ Switched Mode Power Supplies
Sꢁ Switched Reluctance Motor Drives
Features
Sꢁ Power MOS 7® MOSFETs
-
-
-
-
-
Low RDSon
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Sꢁ Kelvin source for easy drive
Sꢁ Very low stray inductance
-
-
Symmetrical design
M5 power connectors
Sꢁ High level of integration
OUT1
Benefits
G1
S1
VBUS
0/VBUS
Sꢁ Outstanding performance at high frequency operation
Sꢁ Direct mounting to heatsink (isolated package)
Sꢁ Low junction to case thermal resistance
Sꢁ Low profile
S4
G4
OUT2
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
Continuous Drain Current
200
208
155
832
±30
8
V
Tc = 25°C
Tc = 80°C
ID
A
IDM
VGS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
V
mꢀ
W
RDSon
PD
IAR
EAR
EAS
Maximum Power Dissipation
Tc = 25°C
781
100
50
Avalanche current (repetitive and non repetitive)
A
Repetitive Avalanche Energy
mJ
Single Pulse Avalanche Energy
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 – 6
APT website – http://www.advancedpower.com
APTM20DHM08
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage
VGS = 0V, ID = 375µA
200
V
VGS = 0V,VDS = 200V Tj = 25°C
VGS = 0V,VDS = 160V Tj = 125°C
VGS = 10V, ID = 104A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
150
750
8
IDSS
Zero Gate Voltage Drain Current
µA
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
mꢀ
V
3
5
IGSS
Gate – Source Leakage Current
±150 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
14.4
VGS = 0V
VDS = 25V
f = 1MHz
nF
Output Capacitance
4.66
0.30
Reverse Transfer Capacitance
Qg
Qgs
Total gate Charge
Gate – Source Charge
280
106
VGS = 10V
VBus = 100V
ID = 208A
nC
Qgd
Td(on)
Tr
Gate – Drain Charge
Turn-on Delay Time
Rise Time
134
32
64
88
116
Inductive switching @ 125°C
V
GS = 15V
VBus = 133V
ID = 208A
ns
Td(off) Turn-off Delay Time
Tf
RG = 2.5ꢀ
Fall Time
Inductive switching @ 25°C
Eon
Turn-on Switching Energy ꢀ
1698
1858
1872
1972
V
GS = 15V, VBus = 133V
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy ꢀ
Turn-on Switching Energy ꢀ
Turn-off Switching Energy ꢀ
ID = 208A, RG = 2.5Ω
Inductive switching @ 125°C
V
GS = 15V, VBus = 133V
ID = 208A, RG = 2.5Ω
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
50% duty cycle
IF = 200A
Min Typ Max Unit
IF(AV)
Maximum Average Forward Current
Tc = 75°C
200
1
1.4
0.9
A
1.1
VF
Diode Forward Voltage
IF = 400A
V
IF = 200A
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
IF = 200A
60
110
400
1680
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
VR = 133V
di/dt = 400A/µs
IF = 200A
Qrr
VR = 133V
nC
di/dt = 400A/µs
ꢀ Eon includes diode reverse recovery.
ꢀ In accordance with JEDEC standard JESD24-1.
2 – 6
APT website – http://www.advancedpower.com
APTM20DHM08
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
Diode
0.16
0.32
RthJC
Junction to Case
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
2500
-40
-40
-40
3
150
125
100
5
°C
TSTG
TC
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
g
2
3.5
280
Wt
Package Weight
Package outline
3 – 6
APT website – http://www.advancedpower.com
APTM20DHM08
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0.9
0.7
0.5
0.3
Single Pulse
0.01
0.1
0.05
0.00001
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
700
600
500
400
300
200
100
0
600
500
400
300
200
100
0
VGS=15V
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
10V
9V
8.5V
8V
7.5V
TJ=25°C
7V
TJ=125°C
6.5V
TJ=-55°C
0
4
8
12 16 20 24 28
0
1
2
3
4
5
6
7
8
9 10
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
250
RDS(on) vs Drain Current
1.2
1.1
1
Normalized to
VGS=10V @ 104A
200
150
100
50
VGS=10V
VGS=20V
0.9
0.8
0
0
50 100 150 200 250 300
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
4 – 6
APT website – http://www.advancedpower.com
APTM20DHM08
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
1.15
1.10
1.05
1.00
0.95
0.90
VGS=10V
ID= 104A
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
1.2
1.1
1.0
0.9
0.8
0.7
0.6
limited by
RDSon
100µs
1ms
100
10
1
10ms
100ms
Single pulse
TJ=150°C
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
V
DS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
14
ID=208A
TJ=25°C
VDS=40V
VDS=100V
12
10
8
Ciss
10000
1000
100
Coss
VDS=160V
6
4
Crss
2
0
0
40 80 120 160 200 240 280 320
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
5 – 6
APT website – http://www.advancedpower.com
APTM20DHM08
Delay Times vs Current
Rise and Fall times vs Current
160
140
120
100
80
120
100
80
60
40
20
0
VDS=133V
RG=2.5Ω
TJ=125°C
L=100µH
td(off)
tf
VDS=133V
RG=2.5Ω
TJ=125°C
L=100µH
tr
60
td(on)
40
20
0
0
50 100 150 200 250 300 350
0
50 100 150 200 250 300 350
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
6
5
4
3
2
1
4
3
2
1
0
VDS=133V
ID=208A
TJ=125°C
VDS=133V
Eoff
RG=2.5Ω
TJ=125°C
L=100µH
Eoff
L=100µH
Eon
Eon
0
50 100 150 200 250 300 350
0
5
10
15
20
25
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
300
250
200
150
100
50
1000
100
10
VDS=133V
D=50%
RG=2.5Ω
TJ=125°C
TJ=150°C
TJ=25°C
0
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
25 50 75 100 125 150 175 200
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
6 – 6
APT website – http://www.advancedpower.com
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