APTM20DHM16T [ADPOW]
Asymmetrical - Bridge MOSFET Power Module; 非对称 - 桥MOSFET功率模块
| 型号： | APTM20DHM16T |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Asymmetrical - Bridge MOSFET Power Module |
| 文件： | 总6页 (文件大小：296K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM20DHM16T
VDSS = 200V
Asymmetrical - Bridge
RDSon = 16mꢀ max @ Tj = 25°C
MOSFET Power Module
ID = 104A @ Tc = 25°C
Application
VBUS
VBUS SENSE
Sꢁ Welding converters
Sꢁ Switched Mode Power Supplies
Sꢁ Switched Reluctance Motor Drives
Q1
CR3
G1
Features
S1
OUT1
OUT2
Sꢁ Power MOS 7® MOSFETs
Q4
-
-
-
-
-
Low RDSon
CR2
Low input and Miller capacitance
Low gate charge
G4
S4
0/VBUS SENSE
NTC1
Avalanche energy rated
Very rugged
0/VBUS
NTC2
Sꢁ Kelvin source for easy drive
Sꢁ Very low stray inductance
-
-
Symmetrical design
Lead frames for power connections
Sꢁ Internal thermistor for temperature monitoring
Sꢁ High level of integration
G4
S4
Benefits
VBUS
OUT2
OUT1
SENSE
Sꢁ Outstanding performance at high frequency operation
Sꢁ Direct mounting to heatsink (isolated package)
Sꢁ Low junction to case thermal resistance
Sꢁ Solderable terminals both for power and signal for
easy PCB mounting
VBUS
0/VBUS
S1
NTC2
NTC1
0/VBUS
SENSE
G1
Sꢁ Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
200
104
77
V
Tc= 25°C
Tc = 80°C
ID
Continuous Drain Current
A
IDM
VGS
Pulsed Drain current
416
±30
16
Gate - Source Voltage
Drain - Source ON Resistance
V
mꢀ
W
RDSon
PD
IAR
EAR
EAS
Maximum Power Dissipation
Tc = 25°C
390
100
50
Avalanche current (repetitive and non repetitive)
A
Repetitive Avalanche Energy
mJ
Single Pulse Avalanche Energy
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 – 6
APT website – http://www.advancedpower.com
APTM20DHM16T
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage
VGS = 0V, ID = 250µA
200
V
VGS = 0V,VDS= 200V Tj = 25°C
VGS = 0V,VDS= 160V Tj = 125°C
VGS = 10V, ID = 52A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
100
500
16
IDSS
Zero Gate Voltage Drain Current
µA
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
mꢀ
V
3
5
IGSS
Gate – Source Leakage Current
±100 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
7220
VGS = 0V
VDS = 25V
f = 1MHz
pF
Output Capacitance
2330
146
Reverse Transfer Capacitance
Qg
Qgs
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
140
53
VGS = 10V
VBus = 100V
ID = 104A
nC
Qgd
Td(on)
Tr
67
32
64
88
116
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ns
Td(off) Turn-off Delay Time
Tf
ID = 104A
RG = 5ꢀ
Fall Time
Inductive switching @ 25°C
Eon
Turn-on Switching Energy ꢀ
849
929
936
986
V
GS = 15V, VBus = 133V
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy ꢀ
Turn-on Switching Energy ꢀ
Turn-off Switching Energy ꢀ
ID = 104A, RG = 5Ω
Inductive switching @ 125°C
V
GS = 15V, VBus = 133V
ID = 104A, RG = 5Ω
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
50% duty cycle
IF = 100A
Min Typ Max Unit
Tc = 90°C
IF(AV)
Maximum Average Forward Current
100
1
1.4
0.9
A
1.1
IF = 200A
VF
Diode Forward Voltage
V
IF = 100A
Tj = 125°C
Tj = 25°C
IF = 100A
60
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
VR = 133V
Tj = 125°C
Tj = 25°C
110
200
di/dt = 200A/µs
IF = 100A
Qrr
VR = 133V
nC
Tj = 125°C
840
di/dt = 200A/µs
ꢀ Eon includes diode reverse recovery.
ꢀ In accordance with JEDEC standard JESD24-1.
2 – 6
APT website – http://www.advancedpower.com
APTM20DHM16T
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
Diode
0.32
0.6
RthJC
Junction to Case
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
2500
-40
150
125
100
4.7
°C
TSTG
-40
-40
TC
Operating Case Temperature
Torque Mounting torque
To Heatsink
M5
N.m
g
Wt
Package Weight
160
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R25
Resistance @ 25°C
68
kꢀ
B25/85 T25 = 298.16 K
4080
K
R25
RT
ꢃ
T: Thermistor temperature
RT: Thermistor value at T
!
1
2
3
ꢁ
.
/
/
1
1
T
25 / 85 ꢀ
exp B
ꢂ
"
ꢀ
T25
0
#
Package outline
3 – 6
APT website – http://www.advancedpower.com
APTM20DHM16T
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3
0.9
0.7
0.5
0.3
0.25
0.2
0.15
0.1
Single Pulse
0.01
0.1
0.05
0.05
0
0.00001
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
350
300
250
200
150
100
50
300
250
200
150
100
50
VGS=15V
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
10V
9V
8.5V
8V
7.5V
TJ=25°C
7V
TJ=125°C
6.5V
TJ=-55°C
0
0
0
4
8
12 16 20 24 28
0
1
2
3
4
5
6
7
8
9 10
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
120
RDS(on) vs Drain Current
1.2
1.1
1
Normalized to
VGS=10V @ 52A
100
80
60
40
20
0
VGS=10V
VGS=20V
0.9
0.8
0
25
50
75 100 125 150
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
4 – 6
APT website – http://www.advancedpower.com
APTM20DHM16T
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
1.15
1.10
1.05
1.00
0.95
0.90
VGS=10V
ID= 52A
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
1.2
1.1
1.0
0.9
0.8
0.7
0.6
limited by
RDSon
100
10
1
100µs
1ms
10ms
Single pulse
TJ=150°C
100ms
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
V
DS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
14
ID=104A
TJ=25°C
VDS=40V
VDS=100V
12
10
8
Ciss
10000
1000
100
VDS=160V
Coss
6
4
2
Crss
0
0
20 40 60 80 100 120 140 160
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
5 – 6
APT website – http://www.advancedpower.com
APTM20DHM16T
Delay Times vs Current
Rise and Fall times vs Current
160
140
120
100
80
120
100
80
60
40
20
0
VDS=133V
RG=5Ω
TJ=125°C
L=100µH
td(off)
tf
VDS=133V
RG=5Ω
TJ=125°C
L=100µH
tr
60
td(on)
40
20
0
0
25 50 75 100 125 150 175
0
25 50 75 100 125 150 175
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
3
2.5
2
2
1.5
1
VDS=133V
ID=104A
TJ=125°C
VDS=133V
RG=5Ω
TJ=125°C
L=100µH
Eoff
Eoff
L=100µH
Eon
1.5
1
Eon
0.5
0
0.5
0
25 50 75 100 125 150 175
0
5
10 15 20 25 30 35 40 45 50
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
300
250
200
150
100
50
1000
100
10
VDS=133V
D=50%
RG=5Ω
TJ=150°C
TJ=25°C
TJ=125°C
0
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
25
38
50
63
75
88
100
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
6 – 6
APT website – http://www.advancedpower.com
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