APTM50HM75SCTG [MICROSEMI]
Full bridge Series & SiC parallel diodes MOSFET Power Module; 全桥系列和碳化硅二极管并联MOSFET功率模块
| 型号： | APTM50HM75SCTG |
| 厂家： | 
Microsemi |
| 描述： | Full bridge Series & SiC parallel diodes MOSFET Power Module |
| 文件： | 总8页 (文件大小：309K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM50HM75SCTG
VDSS = 500V
Full bridge
RDSon = 75mΩ typ @ Tj = 25°C
Series & SiC parallel diodes
MOSFET Power Module
ID = 46A @ Tc = 25°C
Application
•
•
•
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
VBUS
CR1A
CR3A
Features
CR1B CR3B
OUT1 OUT2
•
Power MOS 7® MOSFETs
Q1
Q3
-
-
-
-
Low RDSon
G3
S3
Low input and Miller capacitance
Low gate charge
G1
S1
Avalanche energy rated
CR2A
CR4A
CR2B CR4B
•
Parallel SiC Schottky Diode
Q2
Q4
-
Zero reverse recovery
G4
S4
G2
S2
-
-
-
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
0/VBUS
NTC1
NTC2
•
•
Kelvin source for easy drive
Very low stray inductance
-
-
Symmetrical design
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
•
•
G3
S3
G4
S4
OUT2
Benefits
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
OUT1
VBUS
0/VBUS
S1
G1
S2
G2
NTC2
NTC1
•
•
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Drain - Source Breakdown Voltage
Max ratings
Unit
VDSS
500
V
Tc = 25°C
Tc = 80°C
46
34
ID
Continuous Drain Current
A
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
184
±30
90
357
46
50
2500
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
V
mΩ
W
Tc = 25°C
Avalanche current (repetitive and non repetitive)
A
Repetitive Avalanche Energy
mJ
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1 – 8
APTM50HM75SCTG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 500V Tj = 25°C
100
500
90
5
±100
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V,VDS = 400V Tj = 125°C
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
IGS S
VGS = 10V, ID = 23A
75
mΩ
V
nA
VGS = VDS, ID = 2.5mA
3
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
5590
VGS = 0V
VDS = 25V
f = 1MHz
pF
Output Capacitance
1180
85
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
123
33
VGS = 10V
VBus = 250V
ID = 46A
nC
65
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
18
35
87
77
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ns
ID = 46A
RG = 5Ω
Tf
Fall Time
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 46A, RG = 5Ω
Eon
Turn-on Switching Energy
453
726
745
846
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 46A, RG = 5Ω
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
Maximum Peak Repetitive Reverse Voltage
600
V
µA
A
Tj = 25°C
VR=600V
250
500
Maximum Reverse Leakage Current
Tj = 125°C
DC Forward Current
Tc = 85°C
IF = 30A
30
1.1
1.4
0.9
1.15
VF
Diode Forward Voltage
IF = 60A
IF = 30A
V
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
24
48
33
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 30A
VR = 133V
di/dt = 200A/µs
Qrr
nC
150
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2 – 8
APTM50HM75SCTG
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
600
V
µA
A
Tj = 25°C
Tj = 175°C
Tc = 125°C
Tj = 25°C
Tj = 175°C
100
200 2000
20
1.6
2.0
400
VR=600V
1.8
2.4
VF
Diode Forward Voltage
IF = 20A
V
IF = 20A, VR = 300V
di/dt =800A/µs
f = 1MHz, VR = 200V
f = 1MHz, VR = 400V
QC
Q
Total Capacitive Charge
Total Capacitance
28
nC
pF
130
100
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
0.35
RthJC
Junction to Case Thermal Resistance
°C/W
V
Series diode
1.2
1.5
Parallel diode
RMS Isolation Voltage, any terminal to case t =1 min, Isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
2500
-40
-40
-40
2.5
150
125
100
4.7
°C
TSTG
TC
Operating Case Temperature
Torque Mounting torque
To Heatsink
M5
N.m
g
Wt
Package Weight
160
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
SP4 Package outline (dimensions in mm)
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3 – 8
APTM50HM75SCTG
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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4 – 8
APTM50HM75SCTG
Typical MOSFET Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
0.35
0.3
0.9
0.7
0.5
0.25
0.2
0.15
0.1
0.3
0.1
0.05
Single Pulse
0.01
0.05
0
0.00001
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
120
100
80
60
40
20
0
180
160
140
120
100
80
60
40
20
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
8V
VGS=10&15V
7.5V
7V
6.5V
6V
TJ=25°C
TJ=125°C
5.5V
TJ=-55°C
0
5
10
15
20
25
0
1
2
3
4
5
6
7
8
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
RDS(on) vs Drain Current
DC Drain Current vs Case Temperature
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
50
40
30
20
10
0
Normalized to
GS=10V @ 23A
VGS=10V
V
VGS=20V
0
20
40
60
80
100
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
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5 – 8
APTM50HM75SCTG
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
1.2
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID=23A
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100µs
100 limited by R
DSon
10
1
Single pulse
TJ=150°C
TC=25°C
1ms
10ms
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
TC, Case Temperature (°C)
VDS, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source Voltage
14
100000
10000
1000
100
VDS=100V
ID=46A
TJ=25°C
12
10
8
VDS=250V
Ciss
VDS=400V
Coss
6
Crss
4
2
10
0
0
10
20
30
40
50
0
20 40 60 80 100 120 140 160
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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6 – 8
APTM50HM75SCTG
Delay Times vs Current
Rise and Fall times vs Current
100
80
60
40
20
0
120
td(off)
VDS=333V
100
80
60
40
20
0
RG=5Ω
TJ=125°C
L=100µH
tf
VDS=333V
RG=5Ω
TJ=125°C
L=100µH
td(on)
60
tr
10
20
30
40
50
70
10
20
30
40
50
60
70
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
4
3.5
3
2
VDS=333V
VDS=333V
RG=5Ω
TJ=125°C
L=100µH
ID=46A
TJ=125°C
L=100µH
Eoff
Eoff
1.6
1.2
0.8
0.4
0
2.5
2
Eon
1.5
1
Eon
0.5
0
Eoff
0
10
20
30
40
50
10
20
30
40
50
60
70
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
100
10
400
350
300
250
200
150
100
50
VDS=333V
ZVS
D=50%
RG=5Ω
TJ=125°C
TC=75°C
ZCS
TJ=150°C
Hard
switching
TJ=25°C
0
1
10
15
20
25
30
35
40
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
ID, Drain Current (A)
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7 – 8
APTM50HM75SCTG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.6
1.4
1.2
1
0.9
0.7
0.5
0.3
0.8
0.6
0.4
0.2
0
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
40
35
30
25
20
15
10
5
400
350
300
TJ=25°C
TJ=175°C
TJ=75°C
TJ=175°C
TJ=125°C
250
200
150
100
50
TJ=75°C
TJ=125°C
TJ=25°C
0
0
0
0.5
1
1.5
2
2.5
3
3.5
200 300 400 500 600 700 800
VR Reverse Voltage (V)
VF Forward Voltage (V)
Capacitance vs.Reverse Voltage
800
700
600
500
400
300
200
100
0
1
10
100
1000
VR Reverse Voltage
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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