JAN2N6308 [MICROSEMI]
Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN;
| 型号： | JAN2N6308 |
| 厂家： | 
Microsemi |
| 描述： | Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN 局域网 晶体管 |
| 文件： | 总2页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 498
Devices
Qualified Level
JAN
2N6306
2N6308
JANTX
JANTXV
MAXIMUM RATINGS
2N6306 2N6308
Ratings
Symbol
Units
Vdc
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
250
500
350
700
VCEO
VCBO
VEBO
IC
Vdc
8.0
8.0
Vdc
Adc
Base Current
4.0
125
62.5
Adc
W
W
0C
IB
Total Power Dissipation
@ TC = +250C (1)
@ TC = +1000C (1)
PT
Operating & Storage Temperature Range
1) Between TC = +250C and TC = +1750C, linear derating factor average = 0.833 W/0C
TO-3 (TO-204AA)*
-65 to +200
Top,
T
stg
*See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 100 mAdc
Symbol
Min.
Max.
Unit
Vdc
2N6306
2N6308
V(BR)
250
350
CEO
Collector-Emitter Cutoff Current
VCE = 500 Vdc; VBE = 1.5 Vdc
VCE = 700 Vdc; VBE = 1.5 Vdc
Collector-Emitter Cutoff Current
VCE = 250 Vdc
VCE = 350 Vdc
Emitter-Base Cutoff Current
VEB = 8 Vdc
2N6306
2N6308
ICEX
mAdc
5.0
5.0
2N6306
2N6308
ICEO
mAdc
mAdc
50
50
IEBO
5.0
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N6306, 2N6308 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (2)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
15
12
4
3
15
12
75
60
IC = 3.0 Adc; VCE = 5.0 Vdc
2N6306
2N6308
2N6306
2N6308
2N6306
2N6308
IC = 8.0 Adc; VCE = 5.0 Vdc
IC = 0.5 Adc; VCE = 5.0 Vdc
hFE
Base-Emitter Voltage
Vdc
Vdc
VCE = 5.0 Vdc; IC = 3.0 Adc
2N6306
2N6308
VBE(on)
1.3
1.5
Base-Emitter Saturated Voltage
IB = 2.0 Adc; IC = 8.0 Adc
IB = 2.67 Adc; IC = 8.0 Adc
Collector-Emitter Saturated Voltage
IB = 2.0 Adc; IC = 8.0 Adc
2N6306
2N6308
VBE(sat)
2.3
2.5
2N6306
2N6308
2N6306
2N6308
5.0
5.0
0.8
1.5
Vdc
IB = 2.67 Adc; IC = 8.0 Adc
IB = 0.6 Adc; IC = 3.0 Adc
VCE(sat)
DYNAMIC CHARACTERISTICS
Magnitude of Common-Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
½hfe½
IC = 0.3 Adc, VCE = 10 Vdc, f = 1 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 0.5 Adc, VCE = 4.0 Vdc, f = 1.0 kHz
Output Capacitance
5
5
30
hfe
pF
Cobo
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
250
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 125 Vdc; IC = 3.0 Adc; IB = 0.6 Adc
Turn-Off Time
VCC = 125 Vdc; IC = 3.0 Adc; IB1 = 0.6 Adc; IB2 = 1.5 Adc
ton
ms
ms
0.6
3.0
toff
SAFE OPERATING AREA
DC Tests
TC = +250C; t = 1 s, 1 cycle (See Figure 2 and 3 of MIL-PRF-19500/498)
Test 1
VCE = 15.6 Vdc, IC = 8 Adc
Test 2
VCE = 37 Vdc, IC = 3.4 Adc
Test 3
VCE = 200 Vdc, IC = 65 mAdc
VCE = 300 Vdc, IC = 25 mAdc
2N6306
2N6308
2.) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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