首页 |元器件品牌 | PCB在线计价/下单
首页 > 晶体管 > 功率双极晶体管 > JAN2N6352

JAN2N6352

更新时间：2024-09-18 02:23:47
品牌：MICROSEMI
描述：NPN DARLINGTON POWER SILICON TRANSISTOR

PDF下载

中文翻译

PCB计价

JAN2N6352 概述

NPN DARLINGTON POWER SILICON TRANSISTOR NPN达林顿功率硅晶体管 功率双极晶体管

JAN2N6352 规格参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：TO-33
包装说明：TO-24, 3 PIN针数：4
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.29.00.75风险等级：5.24
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：5 A集电极-发射极最大电压：80 V
配置：DARLINGTON WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：1000
JEDEC-95代码：TO-66JESD-30 代码：O-MBCY-W3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：200 °C
封装主体材料：METAL封装形状：ROUND
封装形式：CYLINDRICAL峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN认证状态：Qualified
参考标准：MIL-19500/472B表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：WIRE
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管元件材料：SILICON标称过渡频率 (fT)：50 MHz
Base Number Matches：1

JAN2N6352 数据手册

通过下载JAN2N6352数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
TECHNICAL DATA  
NPN DARLINGTON POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 472  
Devices  
Qualified Level  
JAN  
2N6350  
2N6351  
2N6352  
2N6353  
JANTX  
JANTXV  
MAXIMUM RATINGS  
Ratings  
2N6350 2N6351  
2N6352 2N6353  
Symbol  
Units  
Collector-Emitter Voltage  
Collector-Base Voltage  
80  
150  
Vdc  
Vdc  
VCER  
VCBO  
80  
150  
12  
6.0  
0.5  
5.0  
10(1)  
Vdc  
Vdc  
Adc  
Adc  
Adc  
Emitter-Base Voltage  
Base Current  
VEBO  
IB  
Collector Current  
IC  
2N6350, 2N6351  
TO-33*  
2N6350 2N6352  
2N6351 2N6353  
Total Power Dissipation @ TA = 250C  
@ TC = 1000C  
Operating & Storage Junction Temperature Range  
1.0(2)  
5.0(3)  
2.0(4)  
25(5)  
W
W
0C  
PT  
-65 to +200  
TJ, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
2N6350 2N6352  
2N6351 2N6353  
Symbol  
Unit  
Thermal Resistance, Junction-to-Case  
20  
4.0  
0C/W  
R
qJC  
1) Applies for tp £ 10 ms, Duty cycle £ 50%  
2N6352, 2N6353  
TO-24* (TO-213AA)  
2) Derate linearly @ 5.72 mW/0C above TA > 250C  
3) Derate linearly @ 50 mW/0C above TC > 1000C  
4) Derate linearly @ 11.4 mW/0C above TA > 250C  
5) Derate linearly @ 250 mW/0C above TC > 1000C  
*See Appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
80  
150  
Vdc  
IC = 25 mAdc, RB1E = 2.2 kW, RB2E = 100 W  
2N6350, 2N6352  
2N6351, 2N6353  
V(BR)  
CER  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  
2N6350, 2N6351, 2N6352, 2N6353 JAN SERIES  
ELECTRICAL CHARACTERISTICS (con’t)  
Characteristics  
Emitter-Base Breakdown Voltage  
Symbol  
Min.  
Max.  
Unit  
6.0  
12  
Vdc  
IEB = 12 mAdc, Base 1 Open  
IEB = 12 mAdc, Base 2 Open  
V(BR)  
EBO  
Collector-Emitter Cutoff Current  
1.0  
1.0  
mAdc  
VEB1 = 2.0 Vdc, RB2E = 100 W, VCE = 80 Vdc  
VEB1 = 2.0 Vdc, RB2E = 100 W, VCE = 150 Vdc  
ON CHARACTERISTICS (6)  
2N6350, 2N6352  
2N6351, 2N6353  
ICEX  
Forward-Current Transfer Ratio  
IC = 1.0 Adc, VCE = 5.0 Vdc, RB2E = 1.0 W  
IC = 5.0 Adc, VCE = 5.0 Vdc, RB2E = 100 W  
IC = 10 Adc, VCE = 5.0 Vdc, RB2E = 100 W  
2N6350, 2N6352  
2N6351, 2N6353  
2,000  
2,000  
400  
hFE  
10,000  
10,000  
IC = 1.0 Adc, VCE = 5.0 Vdc, RB2E = 1.0 W  
IC = 5.0 Adc, VCE = 5.0 Vdc, RB2E = 100 W  
IC = 10 Adc, VCE = 5.0 Vdc, RB2E = 100 W  
Collector-Emitter Saturation Voltage  
IC = 5.0 Adc, RB2E = 100 W, IB1 = 5.0 mAdc  
IC = 5.0 Adc, RB2E = 100 W, IB1 = 10 mAdc  
Base-Emitter Voltage  
1,000  
1,000  
200  
1.5  
2.5  
Vdc  
Vdc  
2N6350, 2N6352  
2N6351, 2N6353  
VCE(sat)  
2.5  
IC = 5.0 Adc, VCE = 5.0 Vdc, RB2E = 100 W  
VBE1(on)  
DYNAMIC CHARACTERISTICS  
Magnitude of Common Emitter Small-Signal Short-Circuit  
Forward Current Transfer Ratio  
½hfe½  
5.0  
25  
IC = 1.0 Adc, VCE = 10 Vdc, RB2E = 100 W; f = 10 MHz  
Output Capacitance  
120  
pF  
VCB1 = 10 Vdc, 100 kHz £ f £ 1.0 MHz, Base 2 Open  
Cobo  
SWITCHING CHARACTERISTICS  
Turn-On Time  
VCC = 30 Vdc; IC = 5.0 Adc  
(See fig 4 for 2N6350, 2N6352)  
ton  
0.5  
1.2  
ms  
ms  
(See fig 5 for 2N6350, 2N6352)  
Turn-Off Time  
VCC = 30 Vdc; IC = 5.0 Adc  
(See fig 4 for 2N6350, 2N6352)  
(See fig 5 for 2N6350, 2N6352)  
toff  
SAFE OPERATING AREA  
DC Tests  
TC = +1000C, 1 Cycle, t ³ 1.0 s, tr + tf = 10 ms, RB2E = 100 W (See fig 6 for 2N6350, 2N6351)  
Test 1  
VCE = 1.5Vdc, IC = 3.3 Adc  
Test 2  
VCE = 30 Vdc, IC = 167 mAdc  
Test 3  
VCE = 80 Vdc, IC = 35 mAdc  
2N6350, 2N6351  
2N6350, 2N6351  
2N6350  
Test 4  
VCE = 150 Vdc, IC = 13 mAdc  
2N6351  
TC = +1000C, 1 Cycle, t ³ 1.0 s, tr + tf = 10 ms, RB2E = 100 W (See fig 7 for 2N6352, 2N6353)  
Test 1  
VCE = 5.0Vdc, IC = 5.0 Adc  
Test 2  
VCE = 10 Vdc, IC = 2.5 Adc  
Test 3  
VCE = 80 Vdc, IC = 95 mAdc  
Test 4  
VCE = 150 Vdc, IC = 35 mAdc  
2N6352, 2N6353  
2N6352, 2N6353  
2N6352  
2N6353  
(6) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 2 of 2  

JAN2N6352 替代型号

型号 制造商 描述 替代类型 文档
2N6352 MICROSEMI NPN DARLINGTON POWER SILICON TRANSISTOR 完全替代
JANTX2N6352 MICROSEMI NPN DARLINGTON POWER SILICON TRANSISTOR 完全替代
JANTXV2N6352 MICROSEMI NPN DARLINGTON POWER SILICON TRANSISTOR 完全替代

JAN2N6352 相关器件

型号 制造商 描述 价格 文档
JAN2N6353 MICROSEMI NPN DARLINGTON POWER SILICON TRANSISTOR 获取价格
JAN2N6378 MICROSEMI Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, 获取价格
JAN2N6379 ETC TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50A I(C) | TO-3 获取价格
JAN2N6383 MICROSEMI Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN 获取价格
JAN2N6384 MICROSEMI Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN 获取价格
JAN2N6385 MICROSEMI Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN 获取价格
JAN2N6437 MICROSEMI Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, 获取价格
JAN2N6438 MICROSEMI Power Bipolar Transistor, 25A I(C), 120V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, 获取价格
JAN2N650A ETC TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 获取价格
JAN2N651A ETC TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 获取价格

JAN2N6352 相关文章

  • Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
    2024-09-20
    5
  • Bourns 精密环境传感器产品选型手册(英文版)
    2024-09-20
    8
  • Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
    2024-09-20
    8
  • Bourns GMOV 混合过压保护组件产品选型手册(英文版)
    2024-09-20
    6

    • 热门型号

  • LM358
  • UPC8158
  • XC6105A618
  • 2N5087/D28Z
  • TMM-136-06-S-S-SM-23-P
  • NC7WZ16P6X
  • SDR10KSM
  • STC53K33N07
  • ERG3SG242
  • M2XRP2-J1Z1-R
  • TMM-139-01-G-S-SM
  • 54F20
  • TMP513
  • SZ6A11
  • PEL12S
  • 概述
  • 规格参数
  • 数据手册
  • 替代型号
    • 2024 ICPDF网 联系我们和版权申明:QQ 272164286