JAN2N6350 [MICROSEMI]
NPN DARLINGTON POWER SILICON TRANSISTOR; NPN达林顿功率硅晶体管
| 型号： | JAN2N6350 |
| 厂家： | 
Microsemi |
| 描述： | NPN DARLINGTON POWER SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 472
Devices
Qualified Level
JAN
2N6350
2N6351
2N6352
2N6353
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
2N6350 2N6351
2N6352 2N6353
Symbol
Units
Collector-Emitter Voltage
Collector-Base Voltage
80
150
Vdc
Vdc
VCER
VCBO
80
150
12
6.0
0.5
5.0
10(1)
Vdc
Vdc
Adc
Adc
Adc
Emitter-Base Voltage
Base Current
VEBO
IB
Collector Current
IC
2N6350, 2N6351
TO-33*
2N6350 2N6352
2N6351 2N6353
Total Power Dissipation @ TA = 250C
@ TC = 1000C
Operating & Storage Junction Temperature Range
1.0(2)
5.0(3)
2.0(4)
25(5)
W
W
0C
PT
-65 to +200
TJ, T
stg
THERMAL CHARACTERISTICS
Characteristics
2N6350 2N6352
2N6351 2N6353
Symbol
Unit
Thermal Resistance, Junction-to-Case
20
4.0
0C/W
R
qJC
1) Applies for tp £ 10 ms, Duty cycle £ 50%
2N6352, 2N6353
TO-24* (TO-213AA)
2) Derate linearly @ 5.72 mW/0C above TA > 250C
3) Derate linearly @ 50 mW/0C above TC > 1000C
4) Derate linearly @ 11.4 mW/0C above TA > 250C
5) Derate linearly @ 250 mW/0C above TC > 1000C
*See Appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
80
150
Vdc
IC = 25 mAdc, RB1E = 2.2 kW, RB2E = 100 W
2N6350, 2N6352
2N6351, 2N6353
V(BR)
CER
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N6350, 2N6351, 2N6352, 2N6353 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Emitter-Base Breakdown Voltage
Symbol
Min.
Max.
Unit
6.0
12
Vdc
IEB = 12 mAdc, Base 1 Open
IEB = 12 mAdc, Base 2 Open
V(BR)
EBO
Collector-Emitter Cutoff Current
1.0
1.0
mAdc
VEB1 = 2.0 Vdc, RB2E = 100 W, VCE = 80 Vdc
VEB1 = 2.0 Vdc, RB2E = 100 W, VCE = 150 Vdc
ON CHARACTERISTICS (6)
2N6350, 2N6352
2N6351, 2N6353
ICEX
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 5.0 Vdc, RB2E = 1.0 W
IC = 5.0 Adc, VCE = 5.0 Vdc, RB2E = 100 W
IC = 10 Adc, VCE = 5.0 Vdc, RB2E = 100 W
2N6350, 2N6352
2N6351, 2N6353
2,000
2,000
400
hFE
10,000
10,000
IC = 1.0 Adc, VCE = 5.0 Vdc, RB2E = 1.0 W
IC = 5.0 Adc, VCE = 5.0 Vdc, RB2E = 100 W
IC = 10 Adc, VCE = 5.0 Vdc, RB2E = 100 W
Collector-Emitter Saturation Voltage
IC = 5.0 Adc, RB2E = 100 W, IB1 = 5.0 mAdc
IC = 5.0 Adc, RB2E = 100 W, IB1 = 10 mAdc
Base-Emitter Voltage
1,000
1,000
200
1.5
2.5
Vdc
Vdc
2N6350, 2N6352
2N6351, 2N6353
VCE(sat)
2.5
IC = 5.0 Adc, VCE = 5.0 Vdc, RB2E = 100 W
VBE1(on)
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
½hfe½
5.0
25
IC = 1.0 Adc, VCE = 10 Vdc, RB2E = 100 W; f = 10 MHz
Output Capacitance
120
pF
VCB1 = 10 Vdc, 100 kHz £ f £ 1.0 MHz, Base 2 Open
Cobo
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 5.0 Adc
(See fig 4 for 2N6350, 2N6352)
ton
0.5
1.2
ms
ms
(See fig 5 for 2N6350, 2N6352)
Turn-Off Time
VCC = 30 Vdc; IC = 5.0 Adc
(See fig 4 for 2N6350, 2N6352)
(See fig 5 for 2N6350, 2N6352)
toff
SAFE OPERATING AREA
DC Tests
TC = +1000C, 1 Cycle, t ³ 1.0 s, tr + tf = 10 ms, RB2E = 100 W (See fig 6 for 2N6350, 2N6351)
Test 1
VCE = 1.5Vdc, IC = 3.3 Adc
Test 2
VCE = 30 Vdc, IC = 167 mAdc
Test 3
VCE = 80 Vdc, IC = 35 mAdc
2N6350, 2N6351
2N6350, 2N6351
2N6350
Test 4
VCE = 150 Vdc, IC = 13 mAdc
2N6351
TC = +1000C, 1 Cycle, t ³ 1.0 s, tr + tf = 10 ms, RB2E = 100 W (See fig 7 for 2N6352, 2N6353)
Test 1
VCE = 5.0Vdc, IC = 5.0 Adc
Test 2
VCE = 10 Vdc, IC = 2.5 Adc
Test 3
VCE = 80 Vdc, IC = 95 mAdc
Test 4
VCE = 150 Vdc, IC = 35 mAdc
2N6352, 2N6353
2N6352, 2N6353
2N6352
2N6353
(6) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
相关型号：
JAN2N6378
Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
MICROSEMI
JAN2N6383
Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
MICROSEMI
JAN2N6384
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
MICROSEMI
JAN2N6385
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
MICROSEMI
JAN2N6437
Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
MICROSEMI
JAN2N6438
Power Bipolar Transistor, 25A I(C), 120V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
MICROSEMI
©2020 ICPDF网 联系我们和版权申明