JANSR2N3501UB [MICROSEMI]
TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal;
| 型号： | JANSR2N3501UB |
| 厂家： | 
Microsemi |
| 描述： | TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal |
| 文件： | 总3页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/366
DEVICES
2N3498
2N3498L
LEVELS
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
2N3499
2N3499L
2N3500
2N3500L
2N3501
2N3501L
2N3501UB
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
2N3498* 2N3501*
2N3499* 2N3501*
Parameters / Test Conditions
Symbol
Unit
Collector-Emitter Voltage
VCEO
VCBO
VEBO
IC
100
100
6.0
150
150
6.0
Vdc
Vdc
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Vdc
500
300
mAdc
TO-5*
2N3498L, 2N3499L
2N2500L, 2N3501L
@ TA = +25°C
@ TC = +25°C
1.0
5.0
W
W
Total Power Dissipation
PT
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
Max.
30
Unit
°C/W
°C/W
175
RθJA
* Electrical characteristics for “L” suffix devices are identical to the “non L”
corresponding devices.
1. Derate linearly 5.71 W/°C for TA > 25°C
2. Derate linearly 28.6 W/°C for TC > 25°C
TO-39* (TO-205AD)
2N3498, 2N3499
2N3500, 2N3501
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol Min. Max.
Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
2N3498, 2N3499 V(BR)CEO
2N3500, 2N3501
100
150
Vdc
Collector-Base Cutoff Current
ηAdc
ηAdc
μAdc
μAdc
V
CB = 50Vdc
VCB = 75Vdc
CB = 100Vdc
50
50
10
10
2N3498, 2N3499
2N3500, 2N3501
2N3498, 2N3499
2N3500, 2N3501
ICBO
3 PIN
2N3501UB
V
VCB = 150Vdc
T4-LDS-0056 Rev. 1 (080812)
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/366
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Symbol
Min.
Max.
Unit
Emitter-Base Cutoff Current
VEB = 4.0Vdc
IEBO
ηAdc
μAdc
25
10
VEB = 6.0Vdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.1mAdc, VCE = 10Vdc
2N3498, 2N3500
2N3499, 2N3501
20
35
IC = 1.0mAdc, VCE = 10Vdc
IC = 10mAdc, VCE = 10Vdc
2N3498, 2N3500
2N3499, 2N3501
25
50
2N3498, 2N3500
2N3499, 2N3501
35
75
hFE
IC = 150mAdc, VCE = 10Vdc
IC = 300mAdc, VCE = 10Vdc
2N3498, 2N3500
2N3499, 2N3501
40
100
120
300
2N3500
2N3501
15
20
IC = 500mAdc, VCE = 10Vdc
2N3498
2N3499
15
20
Collector-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
IC = 300mAdc, IB = 30mAdc
IC = 150mAdc, IB = 15mAdc
All Types
2N3498, 3N3499
2N3500, 2N3501
0.2
0.6
0.4
VCE(sat)
Vdc
Vdc
Base-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
IC = 300mAdc, IB = 30mAdc
IC = 150mAdc, IB = 15mAdc
All Types
2N3498, 3N3499
2N3500, 2N3501
0.8
1.4
1.2
VBE(sat)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude, Forward Current Transfer Ratio
IC = 20mAdc, VCE = 20Vdc, f = 100MHz
|hfe|
1.5
8.0
Output Capacitance
2N3498, 2N3499
2N3500, 2N3501
10
8.0
Cobo
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
pF
pF
Input Capacitance
Cibo
80
VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
T4-LDS-0056 Rev. 1 (080812)
Page 2 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/366
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Time
VEB = 5Vdc; IC = 150mAdc; IB1 = 15mAdc
ton
115
ηs
Turn-Off Time
IC = 150mAdc; IB1 = IB2 = 15mAdc
toff
1150
ηs
SAFE OPERATING AREA
DC Tests
TC = +25°C, tr ≥ 10ηs; 1 Cycle, t = 1.0s
Test 1
VCE = 10Vdc, IC = 500mAdc
VCE = 16.67Vdc, IC = 300mAdc
VCE = 10Vdc, IC = 113mAdc
Test 2
2N3498, 2N3499
2N3500, 2N3501
2N3501UB
VCE = 50Vdc, IC = 100mAdc
VCE = 50Vdc, IC = 23mAdc
Test 3
All Types
2N3501UB
VCE = 80Vdc, IC = 40mAdc
VCE = 80Vdc, IC = 14mAdc
Clamped Switching
TA = +25°C
All Types
2N3501UB
Test 1
IB = 85mAdc, IC = 500mAdc
IB = 50mAdc, IC = 300mAdc
2N3498, 2N3499
2N3500, 2N3501
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%
T4-LDS-0056 Rev. 1 (080812)
Page 3 of 3
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