JANSR2N3636 [MICROSEMI]
Small Signal Bipolar Transistor, 1A I(C), PNP, TO-39, TO-39, 3 PIN;
| 型号： | JANSR2N3636 |
| 厂家： | 
Microsemi |
| 描述： | Small Signal Bipolar Transistor, 1A I(C), PNP, TO-39, TO-39, 3 PIN |
| 文件： | 总35页 (文件大小：777K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCH-POUND
The documentation and process conversion measures
necessary to comply with this document shall be
completed by 6 August 2013.
MIL-PRF-19500/357M
6 May 2013
SUPERSEDING
MIL-PRF-19500/357L
17 July 2010
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER,
TYPES 2N3634 THROUGH 2N3637, 2N3634UB THROUGH 2N3637UB, 2N3634UBN THROUGH 2N3637UBN,
2N3634L THROUGH 2N3637L, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF,
JANSG, JANSH, JANHCA, JANKCA, JANKCAM, JANKCAD, JANKCAP, JANKCAL, JANKCAR, JANKCAF,
JANKCAG, JANKCAH, JANHCB, JANKCB, JANKCBM, JANKCBD, JANKCBP, JANKCBL,
JANKCBR, JANKCBF, JANKCBG, AND JANKCBH
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, low-power amplifier, and
switching transistors. Four levels of product assurance are provided for each encapsulated device type as specified
in MIL-PRF-19500 and two levels of product assurance are provided for unencapsulated devices. RHA level
designators “M”, “D”, “P“, “L”, “R”, “F’, “G”, and “H” are appended to the device prefix to identify devices, which have
passed RHA requirements.
*
1.2 Physical dimensions. See figure 1 (TO-5 and TO-39), figure 2 (UB and UBN), and figures 3 and 4 (JANHC
and JANKC).
*
1.3 Maximum ratings. Unless otherwise specified TA = +25°C.
PT (1)
TA =
+25°C
W
PT (2)
TC =
+25°C
W
PT (3)
TSP
+25°C
IC
TJ and
TSTG
VCBO
V dc
VCEO
V dc
VEBO
V dc
RθJA
(4)
RθJC
(4)
RθJSP
(4)
Types
=
W
A dc
°C/W
°C/W
°C/W
°C
2N3634, 2N3634L
2N3634UB and UBN
2N3635, 2N3635L
2N3635UB and UBN
2N3636, 2N3636L
2N3636UB and UBN
2N3637, 2N3637L
2N3637UB and UBN
1
0.5
1
0.5
1
0.5
1
0.5
5
N/A
5
N/A
5
N/A
5
N/A
N/A
1.5
N/A
1.5
N/A
1.5
N/A
1.5
1
1
1
1
1
1
1
1
140
140
140
140
175
175
175
175
140
140
140
140
175
175
175
175
5
5
5
5
5
5
5
5
175
325
175
325
175
325
175
325
35
N/A
35
N/A
35
N/A
35
N/A
N/A
90
N/A
90
N/A
90
N/A
90
-65 to
+200
* (1) See figure 5 and 6.
* (2) See figure 7.
* (3) See figure 8.
* (4) See figures 9, 10, and 11.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil . Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at https://assist.dla.mil .
AMSC N/A
FSC 5961
MIL-PRF-19500/357M
1.4 Primary electrical characteristics. Unless otherwise specified, TA = +25°C.
hFE at VCE = 10 V dc
|hfe|
Cobo
Types
hFE1
hFE2
I = 1.0
C
mA dc
(1)
hFE3
IC = 10
mA dc
(1)
hFE4
IC = 50
mA dc (1)
hFE5
IC = 150
mA dc (1)
VCE = 30 V dc
IC = 30 mA dc
f = 100 Mhz
VCB = 20 V dc
IE = 0
100 Khz ≤ f ≤
1 Mhz
I
= 0.1
mA dc
(1)
C
Min
25
25
55
55
25
25
55
55
Min
45
45
90
90
45
45
90
90
Min
50
50
100
100
50
50
100
100
Min
50
50
100
100
50
50
100
100
Max
150
150
300
300
150
150
300
300
Min
30
30
60
60
30
30
60
60
Max
Min
1.5
1.5
2.0
2.0
1.5
1.5
2.0
2.0
Max
8.0
8.0
8.5
8.5
8.0
8.0
8.5
8.5
Max
10
10
10
10
10
10
10
10
2N3634, 2N3634L
2N3634UB and UBN
2N3635, 2N3635L
2N3635UB and UBN
2N3636, 2N3636L
2N3636UB and UBN
2N3637, 2N3637L
2N3637UB and UBN
Switching parameters
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
td
tr
ts
tf
IC = 10 mA dc
(1)
IC = 50 mA dc
(1)
IC = 10 mA dc
(1)
IC = 50 mA dc (1)
IB = 5 mA dc
IB = 1 mA dc
V dc
IB = 5 mA dc
V dc
IB = 1 mA dc
V dc
V dc
ns
ns
ns
ns
Minimum
Maximum
0.65
0.90
0.3
0.6
0.8
100
100
500
150
(1) Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 Test Methods for Semiconductor Devices.
-
Semiconductor Devices, General Specification for.
-
*
(Copies of these documents are available online at https://quicksearch.dla.mil or https://assist.dla.mil or from the
Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2
MIL-PRF-19500/357M
Notes
Dimensions
Millimeters
Ltr
Inches
Min
Max
.335
.260
.370
Min
7.75
6.10
8.51
Max
8.51
6.60
9.40
CD
CH
HD
LC
LD
LL
.305
.240
.335
TO-5
TO-39
.200 TYP
5.08 TYP
7
6
.016
.021
See notes 7, 9, and 10
0.41
0.53
LU
L1
L2
P
.016
.019
.050
0.41
0.48
1.27
7
7
7
5
.250
.100
6.35
2.54
Q
r
TL
TW
.050
.010
.045
.034
1.27
0.254
1.14
8
4
3
6
.029
.028
0.74
0.71
0.86
α
45° TP
45° TP
Term 1
Term 2
Term 3
Emitter
Base
Collector
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r maximum, TW must be held to a minimum length of .021 inch (0.53 mm).
4. TL measured from maximum HD.
5. CD shall not vary more than ±.010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 inch
(0.18 mm) radius of true position (TP) at a maximum material condition (MMC) relative to the tab at MMC.
The device may be measured by direct methods or by gauge and gauging procedure.
7. LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and
beyond LL minimum.
8. r (radius) applies to both inside corners of tab.
9. For transistor types 2N3634 through 2N3637, LL is .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm)
maximum (TO-39).
10. For transistor types 2N3634L through 2N3637L, LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches
(44.45 mm) maximum (TO-5).
11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Physical dimensions (TO-5 and TO-39).
3
MIL-PRF-19500/357M
* FIGURE 2. Physical dimensions, surface mount 2N3634UB through 2N3637UB (UB and UBN version).
4
MIL-PRF-19500/357M
Symbol
Dimensions
Millimeters
Min
Note
Symbol
Dimensions
Inches Millimeters
Note
Inches
Min
.046
.115
.085
Max
Max
1.42
3.25
2.74
3.25
2.74
0.97
0.89
Min
.036
.071
.016
Max
Min
Max
1.02
2.01
0.61
.203
.305
.559
BH
BL
.056
.128
.108
.128
.108
.038
.035
1.17
2.92
2.16
.040
.079
.024
.008
.012
.022
0.91
1.80
0.41
LS
LS
1
2
BW
CL
CW
LL1
LL2
LW
r
r1
r2
.022
.017
0.56
0.43
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metallized areas.
4. Lid material: Kovar.
5. UB only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the metal lid.
6. UBN only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Isolated lid with three pads only.
7. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* FIGURE 2. Physical dimensions, surface mount 2N3634UB through 2N3637UB (UB and UBN version).
5
MIL-PRF-19500/357M
1. Chip size.............…024 x .026 inch ±.002 inch (0.61 x 0.66 mm ±0.051mm).
2. Chip thickness.....…010 ±.0015 inch nominal (0.254 ±0.038 mm).
3. Top metal................Aluminum 15,000Å minimum, 18,000Å nominal.
4. Back metal..............Gold 3,500Å minimum, 5,000Å nominal.
5. Backside..............…Collector.
6. Bonding pad ...........B = .004 x .006 inch, (0.102 mm x 0.152 mm).
E = .004 x .0055 inch. (0.102 mm x 0.140 mm).
*
7. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* FIGURE 3. JANHCA and JANKCA die dimensions.
6
MIL-PRF-19500/357M
1. Chip size..............….024 x .0259 inch nominal (0.61 x 0.66 mm).
2. Chip thickness.....….0079 inch nominal (0.21mm).
3. Top metal................Aluminum 20,000Å nominal.
4. Back metal..............12K Gold.
5. Backside. ............…Collector.
*
6. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* FIGURE 4. JANHCB and JANKCB die dimensions.
7
MIL-PRF-19500/357M
2.3 Order of precedence Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before
contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500 and as follows.
RθJSP(AM) ..............Thermal resistance junction to solder pads (adhesive mount to PCB).
RθJSP(IS)................Thermal resistance junction to solder pads (infinite sink mount to PCB).
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500, and figure 1, 2, and 3 herein.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and
test levels shall be as defined in MIL-PRF-19500.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I.
3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I herein.
3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. The radiation hardened designator M, D, P,
L, R, F, G, or H shall immediately precede (or replace) the device “2N” identifier (depending upon degree of
abbreviation required).
3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4 and tables I and II).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500.
8
MIL-PRF-19500/357M
4.2.2 Group E qualification. Group E inspection shall be performed for qualification or requalification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on
the first inspection lot to this revision to maintain qualification.
4.3 Screening (JANTX, JANTXV, and JANS levels only). Screening shall be in accordance with table E-IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see
table E-IV of
Measurement
MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
(1) 3c
Thermal impedance, method 3131 of
MIL-STD-750 (see 4.3.3).
Thermal impedance, method 3131 of
MIL-STD-750 (see 4.3.3).
9
ICBO2 and hFE5
Not applicable
10
11
24 hours minimum.
24 hours minimum.
ICBO2 and hFE5
ICBO2 and hFE5
∆ICBO2 = 100 percent of initial value or
10 nA dc, whichever is greater;
∆hFE5 = ±15 percent of initial value.
12
13
See 4.3.2, 240 hours minimum.
See 4.3.2.
Subgroups 2 and 3 of table I herein;
∆ICBO2 = 100 percent of initial value or
10 nA dc, whichever is greater.
Subgroup 2 of table I herein;
∆ICBO2 = 100 percent of initial value or
10 nA dc, whichever is greater.
∆hFE5 = ±15 percent of initial value.
∆hFE5 = ±15 percent of initial value.
(1) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to
be repeated in screening requirements.
4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500; “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows
JANS requirements; the JANHC follows JANTX requirements.
4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc. Power shall be
applied to achieve TJ = +135°C minimum using a minimum PD = 75 percent of PT maximum rated as defined in 1.3.
With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and
mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence
is required. In addition, the manufacturing site’s burn-in data and performance history will be essential criteria for
burn-in modification approval.
.
4.3.3 Thermal impedance (ZθJX measurements)
The ZθJX measurements shall be performed in accordance with
*
method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD (and VC where
appropriate). (See figures 9 through 11.) Measurement delay time (tMD) = 70 µs maximum. See table III, group E,
subgroup 4 herein.
9
MIL-PRF-19500/357M
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened
devices shall be submitted to and pass the requirements of table I, group A, subgroup 1, subgroup 2 inspection only.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of
MIL-PRF-19500 and table I herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements (end-points)
and delta requirements shall be in accordance with table I, group A, subgroup 2 and 4.5.4 herein. See 4.4.2.2 for
JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta requirements for JAN,
JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with table I, group A, subgroup 2
and 4.5.4 herein.
4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500.
Subgroup Method Condition
B4
1037
VCB = 10 - 30 V dc; 2,000 cycles. No heat sink or forced-air cooling on devices shall be
permitted.
B5
1027
V
CB = 10 V dc; PD ≥ 100 percent of maximum rated PT (see 1.3). (NOTE: If a failure
occurs, resubmission shall be at the test conditions of the original sample.)
Option 1: 96 hours minimum, sample size in accordance with table E-VIa of
MIL-PRF-19500 adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to achieve
TJ = +225°C minimum.
4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Separate samples may
be used for each step. In the event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In
addition, all catastrophic failures during CI shall be analyzed to the extent possible to identify root cause and
corrective action. Whenever a failure is identified as wafer lot and /or wafer processing related, the entire wafer lot
and related devices assembled from the wafer lot shall be rejected unless an appropriate determined corrective
action to eliminate the failures mode has been implemented and the devices from the wafer lot are screened to
eliminate the failure mode.
Step
1
Method
1026
Condition
Steady-state life: 1,000 hours minimum, VCB = 10 V dc, power shall be applied to achieve
TJ = +150°C minimum using a minimum of PD = 75 percent of maximum rated PT as
defined in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test time
decreased as long as the devices are stressed for a total of 45,000 device hours minimum,
and the actual time of test is at least 340 hours.
2
3
1048
1032
Blocking life, TA = +150°C, VCB = 80 percent of rated voltage, 48 hours minimum.
n = 45 devices, c = 0.
High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.
10
MIL-PRF-19500/357M
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from
each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot.
See MIL-PRF-19500.
b. Shall be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2,
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and
JANTXV) may be pulled prior to the application of final lead finish.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the test and conditions
specified for subgroup testing in table E-VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and
JANTXV) herein for group C testing. Electrical measurements (end-points) requirements shall be in accordance with
subgroup 2, of table I and 4.5.4 herein; delta requirements only apply to subgroup C6.
4.4.3.1 Group C inspection (JANS), table E-VII of MIL-PRF-19500.
Subgroup Method Condition
C2
C5
2036
3131
Test condition E; (not applicable for UB and UBN devices).
RθJA and RθJC only, as applicable (see 1.3) and in accordance with thermal impedance
curves.
C6
1026
Test condition B, 1,000 hours at VCB = 10 V dc; power shall be applied to achieve TJ =
+150°C minimum and a minimum of PD = 75 percent of maximum rated PT as defined in
1.3. n = 45, c = 0. The sample size may be increased and the test time decreased as long
as the devices are stressed for a total of 45,000 device hours minimum, and the actual time
of test is at least 340 hours.
4.4.3.2 Group C inspection (JAN, JANTX, and JANTXV), table E-VII of MIL-PRF-19500.
Subgroup Method Condition
C2
2036
3131
Test condition E; not applicable for UB and UBN devices.
C5
C6
RθJA and RθJC only, (see 1.3 and 4.3.3) and in accordance with thermal impedance curves.
Not applicable.
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any
inspection lot containing the intended package type and lead finish procured to the same specification which is
submitted to and passes table I tests herein for conformance inspection. When the final lead finish is solder or any
plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of
final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be
considered as complying with the requirements for that subgroup.
4.4.4 Group D inspection. Conformance inspection for hardness assured JANS and JANTXV types shall include
the group D tests specified in table II herein. These tests shall be performed as required in accordance with
MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for
neutron fluence as applicable (see 6.2 herein), except group D, subgroup 2 may be performed separate from other
subgroups. Alternate package options may also be substituted for the testing provided there is no adverse effect to
the fluence profile.
11
MIL-PRF-19500/357M
4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and as specified herein. Electrical measurements
(end-points) shall be in accordance with subgroup 2 of table I and 4.5.4 herein.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
4.5.2 Input capacitance. This test shall be conducted in accordance with method 3240 of MIL-STD-750, except
the output capacitor shall be omitted.
4.5.3 Noise figure. Noise figure shall be measured using a model 310B Quan Tech Laboratories test set, or
equivalent. Conditions shall be as specified in table I herein.
4.5.4 Delta requirements. Delta requirements shall be as specified below:
Step
Inspection
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
3036
1
2
Collector-base cutoff
current
Bias condition D,
VCB = 100 V dc
100 percent of initial
value or ±20 nA dc,
whichever is greater.
∆ICB02
(1)
Forward current
transfer ratio
3076
VCE = 10 V dc;
IC = 150 mA dc;
pulsed see 4.5.1
∆hFE5
(1)
±25 percent change
from initial reading.
(1) Devices which exceed the table I limits for this test shall not be accepted.
12
MIL-PRF-19500/357M
* TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Conditions
Symbol
Limits
Unit
Method
2071
Min
Max
Subgroup 1 2/
Visual and mechanical
inspection 3/
Solderability 3/ 4/
2026
1022
n = 15 leads, c = 0
Resistance to solvents
3/ 4/ 5/
n = 15 devices, c = 0
Temp cycling 3/ 4/
1051
1071
Test condition C, 25 cycles. n = 22 devices,
c = 0
Hermetic seal 4/
Fine leak
n = 22 devices, c = 0
Gross leak
Electrical measurements 4/
Table I, subgroup 2
n = 4 device, c = 0
Decap internal visual (design
verification)
2075
Subgroup 2
Thermal impedance
3131
3036
See 4.3.3.
°C/W
Z
θJX
Collector to base, cutoff
current
Bias condition D
2N3634, 2N3634L, UB, UBN
2N3635, 2N3635L, UB, UBN
2N3636, 2N3636L, UB, UBN
2N3637, 2N3637L, UB, UBN
10
10
10
10
µA dc
µA dc
µA dc
µA dc
V
V
V
V
= 140 V dc
= 140 V dc
= 175 V dc
= 175 V dc
I
CB
CB
CB
CB
CBO1
I
I
I
CBO1
CBO1
CBO1
Emitter to base, cutoff current
3061
3011
10
µA dc
Bias condition D, V = 5 V dc
I
EBO1
EB
Breakdown voltage, collector
to emitter
Bias condition D, I = 10 mA dc pulsed
V
(BR)CEO
C
(see 4.5.1)
2N3634, 2N3634L, UB, UBN
2N3635, 2N3635L, UB, UBN
140
175
V dc
V dc
2N3636, 2N3636L, UB, UBN
2N3637, 2N3637L, UB, UBN
See footnotes at end of table.
13
MIL-PRF-19500/357M
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Conditions
Symbol
Limits
Min
Unit
Method
3036
Max
Subgroup 2 - Continued
Collector to base cutoff
current
100
nA dc
Bias condition D, V = 100 V dc
I
CBO2
CB
Emitter to base cutoff current
3061
3041
50
10
nA dc
Bias condition D, V = 3 V dc
I
EBO2
EB
Collector to emitter cutoff
current
µA dc
Bias condition D, V
= 100 V dc
I
CEO
CE
Forward-current transfer ratio
3076
V
= 10 V dc, I = 0.1 mA dc pulsed
h
FE1
CE
C
(see 4.5.1)
2N3634, 2N3634L, UB, UBN
2N3635, 2N3635L, UB, UBN
25
55
2N3636, 2N3636L, UB, UBN
2N3637, 2N3637L, UB, UBN
Forward-current transfer ratio
3076
3076
3076
3076
V
= 10 V dc, I = 1.0 mA dc pulsed
h
CE
C
FE2
FE3
FE4
FE5
(see 4.5.1)
2N3634, 2N3634L, UB, UBN
2N3635, 2N3635L, UB, UBN
45
90
2N3636, 2N3636L, UB, UBN
2N3637, 2N3637L, UB, UBN
Forward-current transfer ratio
V
= 10 V dc, I = 10 mA dc pulsed
h
h
h
CE
C
(see 4.5.1)
2N3634, 2N3634L, UB, UBN
2N3635, 2N3635L, UB, UBN
50
2N3636, 2N3636L, UB, UBN
2N3637, 2N3637L, UB, UBN
100
Forward-current transfer ratio
V
= 10 V dc, I = 50 mA dc pulsed
C
CE
(see 4.5.1)
2N3634, 2N3634L, UB, UBN
2N3635, 2N3635L, UB, UBN
50
150
300
2N3636, 2N3636L, UB, UBN
2N3637, 2N3637L, UB, UBN
100
Forward-current transfer ratio
V
= 10 V dc, I = 150 mA dc pulsed
C
CE
(see 4.5.1)
2N3634, 2N3634L, UB, UBN
2N3635, 2N3635L, UB, UBN
30
60
2N3636, 2N3636L, UB, UBN
2N3637, 2N3637L, UB, UBN
See footnotes at end of table.
14
MIL-PRF-19500/357M
* TABLE I. Group A inspection - Continued.
Symbol
Limits
Unit
Inspection 1/
MIL-STD-750
Conditions
Method
3071
Min
Max
Subgroup 2 - Continued
Collector to emitter voltage
(saturated)
0.3
V dc
VCE(sat)1
I
= 10 mA dc, I = 1 mA dc pulsed
B
(see 4.5.1)
C
Collector to emitter voltage
(saturated)
3071
3066
0.6
0.8
V dc
V dc
VCE(sat)2
I
= 50 mA dc, I = 5 mA dc pulsed
C
B
(see 4.5.1)
Base-emitter voltage
(saturated)
VBE(sat)1
Test condition A; I = 10 mA dc,
C
I
= 1.0 mA dc pulsed (see 4.5.1)
B
Base-emitter voltage
(saturated)
3066
0.65
0.90
V dc
VBE(sat)2
Test condition A; I = 50 mA dc,
C
I
= 5 mA dc pulsed (see 4.5.1)
B
Subgroup 3
High temperature operation:
T
= +150°C
A
Collector to base cutoff
current
3036
3076
10
µA dc
Bias condition D, V = -100 V dc
I
CBO3
CB
Low-temperature operation:
T
= -55°C
A
Forward-current transfer
ratio
V
= 10 V dc, I = 50 mA dc
h
FE6
CE
C
25
50
2N3634, 2N3634L, UB, UBN
2N3635, 2N3635L, UB, UBN
2N3636, 2N3636L, UB, UBN
2N3637, 2N3637L, UB, UBN
Subgroup 4
Small-signal short-circuit
forward-current transfer ratio
3306
V
= 30 V dc, I = 30 mA dc,
|h |
fe
CE
C
f = 100 MHz
2N3634, 2N3634L, UB, UBN
2N3635, 2N3635L, UB, UBN
1.5
2.0
8.0
8.5
2N3636, 2N3636L, UB, UBN
2N3637, 2N3637L, UB, UBN
Small-signal short-circuit
forward current transfer ratio
3206
V
= 10 V dc, I = 10 mA dc,
h
fe
CE
C
f = 1 kHz
2N3634, 2N3634L, UB, UBN
2N3635, 2N3635L, UB, UBN
40
80
160
320
2N3636, 2N3636L, UB, UBN
2N3637, 2N3637L, UB, UBN
See footnotes at end of table.
15
MIL-PRF-19500/357M
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Conditions
Symbol
Limits
Unit
Method
3201
Min
Max
Subgroup 4 - Continued
Small-signal short-circuit
input impedance
V
= 10 V dc, I = 10 mA dc,
h
ie
CE
C
f = 1 kHz
2N3634, 2N3634L, UB, UBN
2N3636, 2N3636L, UB, UBN
100
200
600
Ω
Ω
2N3635, 2N3635L, UB, UBN
2N3637, 2N3637L, UB, UBN
1,200
3x10-4
Small signal open circuit
reverse voltage transfer ratio
3211
3216
V
= 10 V dc, IC = 10 mA dc,
h
h
CE
re
f = 1 kHz
Small signal open circuit
output admittance
200
µs
V
= 10 V dc, I = 10 mA dc,
CE
C
oe
f = 1 kHz
Open circuit output
capacitance
3236
3240
10
75
pF
pF
V
= 20 V dc, I = 0, 100 kHz ≤ f ≤ 1 MHz
C
obo
CB
E
Input capacitance (output
open circuited)
V
= 1 V dc, I = 0,
C
ibo
EB
C
100 kHz ≤ f ≤ 1 MHz
Noise figure
3246
NF
V
= 10 V dc, I = 0.5 mA dc, R = 1 kΩ
CE
C
G
(see 4.5.3)
f = 100 Hz
f = 10 kHZ
f = 1 kHZ
5
3
3
dB
dB
dB
Pulse response
3251
Test condition A
Switching parameters
Pulse delay time
See figure 12
100
ns
t
t
d
Pulse rise time
Pulse storage time
Pulse fall time
See figure 12
See figure 12
See figure 12
100
500
150
600
ns
ns
ns
ns
t
r
s
t
f
t
t & t
s
t
off
off
f
See footnotes at end of table.
16
MIL-PRF-19500/357M
* TABLE I. Group A inspection - Continued.
Inspection 1/
Subgroup 5
MIL-STD-750
Conditions
Symbol
Limits
Min Max
Unit
Method
3051
Safe operating area
(continuous dc) TO-39
T
= + 25°C, t = 1s, 1 cycle
(see figures 13 and 14)
C
Test 1
2N3634, 2N3634L
2N3635, 2N3635L
V
V
= 100 V dc, I = 30 mA dc
C
CE
CE
2N3636, 2N3636L
2N3637, 2N3637L
= 130 V dc, I = 20 mA dc
C
Test 2
Test 3
V
V
T
= 50 V dc, I = 95 mA dc
C
CE
CE
= 5 V dc, I = 1 A dc
C
Safe operating area
(continuous dc) UB
3051
= + 25°C, t = 100 ms, 1 cycle
C
(see figures 15 and 16)
Test 1
2N3634UB, 2N3635UB,
2N3634UBN, 2N3635UBN
V
V
= 85 V dc, I = 30 mA dc
C
CE
CE
2N3636UB, 2N3637UB
2N3636UBN, 2N3637UBN
= 125 V dc, I = 20 mA dc
C
Test 2
Test 3
V
V
= 50 V dc, I = 50 mA dc
C
CE
CE
= 5 V dc, I = 500 mA dc
C
End-point electrical
measurements
Subgroup 2 of table I.
Subgroups 6 and 7
Not applicable
1/ For sampling plan see MIL-PRF-19500.
2/ For resubmission of failed table I, subgroup 1, double the sample size of the failed test or sequence of tests. A
failure in table I, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon
submission.
3/ Separate samples may be used.
4/ Not required for JANS devices.
5/ Not required for laser marked devices.
17
MIL-PRF-19500/357M
TABLE II. Group D inspection.
Inspection 1/ 2/ 3/
Subgroup 1 4/
MIL-STD-750
Conditions
Limit
Unit
Method
Symbol
Min
Max
Neutron irradiation
1017
3036
Neutron exposure VCES = 0 V
Bias condition D
Collector to base, cutoff current
2N3634, 2N3634L, UB, UBN
2N3635, 2N3635L, UB, UBN
2N3636, 2N3636L, UB, UBN
2N3637, 2N3637L, UB, UBN
20
20
20
20
µA dc
µA dc
µA dc
µA dc
V
V
V
V
= 140 V dc
= 140 V dc
= 175 V dc
= 175 V dc
I
CB
CB
CB
CB
CBO1
I
CBO1
I
CBO1
I
CBO1
Emitter to base, cutoff current
3061
3011
20
µA dc
Bias condition D, V = 5 V dc
I
EB
EBO1
Breakdown voltage, collector to
emitter
Bias condition D, I = 10 mA dc
V
(BR)CEO
C
pulsed
(see 4.5.1)
2N3634, 2N3634L, UB, UBN
2N3635, 2N3635L, UB, UBN
140
175
V dc
V dc
2N3636, 2N3636L, UB, UBN
2N3637, 2N3637L, UB, UBN
Collector to base cutoff current
Emitter to base cutoff current
3036
3061
3041
200
100
20
nA dc
nA dc
µA dc
Bias condition D, V = 100 V dc
I
CBO2
CB
Bias condition D, V = 3 V dc
I
EBO2
EB
Collector to emitter cutoff
current
Bias condition D, V
= 100 V dc
I
CEO
CE
Forward-current transfer ratio
3076
3076
3076
3076
VCE = 10 V dc; IC = 0.1 mA dc
VCE = 10 V dc; IC = 1.0 mA dc
VCE = 10 V dc; IC = 10 mA dc
VCE = 10 V dc; IC = 50 mA dc
[hFE1] 5/
[hFE2] 5/
[hFE3] 5/
[hFE4] 5/
2N3634, 2N3636
2N3635, 2N3637
[12.5]
[27.5]
Forward-current transfer ratio
2N3634, 2N3636
2N3635, 2N3637
[22.5]
[45]
Forward-current transfer ratio
2N3634, 2N3636
2N3635, 2N3637
[25]
[50]
Forward-current transfer ratio
2N3634, 2N3636
2N3635, 2N3637
[25]
[50]
150
300
See footnotes at end of table.
18
MIL-PRF-19500/357M
TABLE II. Group D inspection - Continued.
Inspection 1/ 2/ 3/
MIL-STD-750
Limit
Unit
Method
Conditions
Symbol
Min
Max
Subgroup 1 - Continued.
Forward-current transfer ratio
3076
VCE = 10 V dc; IC = 150 mA dc
[hFE5] 5/
2N3634, 2N3636
2N3635, 2N3637
[15]
[30]
Collector-emitter saturation
voltage
3071
3071
3066
.35
.69
V dc
V dc
V dc
IC = 10 mA dc; IB = 1.0 mA dc
IC = 50 mA dc; IB = 5.0 mA dc
VCE(sat)1
VCE(sat)2
VBE(sat)1
Collector-emitter saturation
voltage
Base-emitter voltage
(saturated)
0.92
Test condition A; I = 10 mA dc,
C
I
= 1.0 mA dc pulsed (see 4.5.1)
B
Base-emitter voltage
(saturated)
3066
1.04
V dc
VBE(sat)2
Test condition A; I = 50 mA dc,
C
I
= 5 mA dc pulsed (see 4.5.1)
B
Subgroup 2
Total dose irradiation
1019
3036
Gamma exposure
2N3634, 2N3636
2N3635, 2N3637
VCES = 112 V
VCES = 140 V
Collector to base, cutoff current
Bias condition D
2N3634, 2N3634L, UB, UBN
2N3635, 2N3635L, UB, UBN
2N3636, 2N3636L, UB, UBN
2N3637, 2N3637L, UB, UBN
20
20
20
20
µA dc
µA dc
µA dc
µA dc
V
V
V
V
= 140 V dc
= 140 V dc
= 175 V dc
= 175 V dc
I
CB
CB
CB
CB
CBO1
I
CBO1
I
CBO1
I
CBO1
Emitter to base, cutoff current
3061
3011
20
µA dc
Bias condition D, V = 5 V dc
I
EB
EBO1
Breakdown voltage, collector to
emitter
Bias condition D, I = 10 mA dc
V
(BR)CEO
C
pulsed
(see 4.5.1)
2N3634, 2N3634L, UB, UBN
2N3635, 2N3635L, UB, UBN
140
175
V dc
V dc
2N3636, 2N3636L, UB, UBN
2N3637, 2N3637L, UB, UBN
Collector to base cutoff current
Emitter to base cutoff current
3036
3061
3041
200
100
20
nA dc
nA dc
µA dc
Bias condition D, V = 100 V dc
I
I
CB
CBO2
Bias condition D, V = 3 V dc
EB
EBO2
Collector to emitter cutoff
current
Bias condition D, V
= 100 V dc
I
CEO
CE
See footnotes at end of table.
19
MIL-PRF-19500/357M
TABLE II. Group D inspection - Continued.
Inspection 1/ 2/ 3/
MIL-STD-750
Limit
Unit
Method
Conditions
Symbol
Min
Max
Subgroup 2 - Continued.
Forward-current transfer ratio
3076
3076
3076
3076
3076
VCE = 10 V dc; IC = 0.1 mA dc
[hFE1] 5/
[hFE2] 5/
[hFE3] 5/
[hFE4] 5/
[hFE5] 5/
2N3634, 2N3636
2N3635, 2N3637
[12.5]
[27.5]
Forward-current transfer ratio
VCE = 10 V dc; IC = 1.0 mA dc
VCE = 10 V dc; IC = 10 mA dc
2N3634, 2N3636
2N3635, 2N3637
[22.5]
[45]
Forward-current transfer ratio
2N3634, 2N3636
2N3635, 2N3637
[25]
[50]
Forward-current transfer ratio
VCE = 10 V dc; IC = 50 mA dc
VCE = 10 V dc; IC = 150 mA dc
2N3634, 2N3636
2N3635, 2N3637
[25]
[50]
150
300
Forward-current transfer ratio
2N3634, 2N3636
2N3635, 2N3637
[15]
[30]
Collector-emitter saturation
voltage
3071
3071
3066
IC = 10 mA dc; IB = 1.0 mA dc;
IC = 50 mA dc; IB = 5.0 mA dc;
VCE(sat)1
VCE(sat)2
VBE(sat)1
.35
.69
V dc
V dc
V dc
Collector-emitter saturation
voltage
Base-emitter voltage
(saturated)
0.92
Test condition A; I = 10 mA dc,
C
I
= 1.0 mA dc pulsed (see 4.5.1)
B
Base-emitter voltage
(saturated)
3066
1.04
V dc
VBE(sat)2
Test condition A; I = 50 mA dc,
C
I
= 5 mA dc pulsed (see 4.5.1)
B
1/ Tests to be performed on all devices receiving radiation exposure.
2/ For sampling plan, see MIL-PRF-19500.
3/ Electrical characteristics apply to device types unless otherwise noted.
4/ Subgroup 1 is an optional test and must be specified on the contract when required.
5/ See method 1019 of MIL-STD-750 for how to determine [hFR] by first calculating the delta (1/hFE) from the pre- and
post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can
never exceed the pre-radiation minimum hFE that it is based upon.
20
MIL-PRF-19500/357M
* TABLE III. Group E inspection (all quality levels) - for qualification only.
Inspection
MIL-STD-750
Qualification
Method
Conditions
Subgroup 1
45 devices
c = 0
Temperature cycling
(air to air)
1051
1071
Test condition C, 500 cycles
Hermetic seal
Fine leak
Gross leak
Electrical
See table I, subgroup 2 and 4.5.4 herein.
measurements
Subgroup 2
45 devices
c = 0
Intermittent life
1037
3131
V
= 10 V dc, 6,000 cycles. Adjust device current, or power, to
CB
achieve a minimum ∆TJ of +100°C.
Electrical
measurements
See table I of subgroup 2 and 4.5.4 herein.
Subgroup 4
15 devices,
c = 0
Thermal resistance
R
can be calculated but shall be measured once in the same
θJSP
package with a similar die size to confirm calculations (may apply
to multiple specification sheets).
Thermal impedance
curves
See MIL-PRF-19500, table E-IX, group E, subgroup 4.
Sample size
N/A
Subgroup 5
Not applicable
Subgroup 6
ESD
11 devices
1020
1033
Subgroup 8
Reverse stability
45 devices
c = 0
Condition B.
21
MIL-PRF-19500/357M
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at ≤ T
J
specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired
maximum T allowed.
J
2. Derate design curve constrained by the maximum junction temperature (TJ ≤ 200°C) and power rating specified.
(See 1.3 herein.)
3. Derate design curve chosen at TJ ≤ 150°C, where the maximum temperature of electrical test is performed.
4. Derate design curve chosen at TJ ≤ 125°C, and 110°C to show power rating where most users want to limit TJ in
their application.
* FIGURE 5. Temperature-power derating for (RθJA), base case mount (TO-5 and TO-39).
22
MIL-PRF-19500/357M
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at ≤ T
J
specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired
maximum T allowed.
J
2. Derate design curve constrained by the maximum junction temperature (TJ ≤ 200°C) and power rating specified.
(See 1.3 herein.)
3. Derate design curve chosen at TJ ≤ 150°C, where the maximum temperature of electrical test is performed.
4. Derate design curve chosen at TJ ≤ 125°C, and 110°C to show power rating where most users want to limit TJ in
their application.
* FIGURE 6. Temperature-power derating for (RθJA) (UB AND UBN).
23
MIL-PRF-19500/357M
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at ≤ T
J
specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired
maximum T allowed.
J
2. Derate design curve constrained by the maximum junction temperature (TJ ≤ 200°C) and power rating specified.
(See 1.3 herein.)
3. Derate design curve chosen at TJ ≤ 150°C, where the maximum temperature of electrical test is performed.
4. Derate design curve chosen at TJ ≤ 125°C, and 110°C to show power rating where most users want to limit TJ in
their application.
FIGURE 7. Temperature-power derating for (RθJC), base case mount (TO-5 and TO-39 Kovar).
24
MIL-PRF-19500/357M
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at ≤ T
J
specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired
maximum T allowed.
J
2. Derate design curve constrained by the maximum junction temperature (TJ ≤ 200°C) and power rating specified.
(See 1.3 herein.)
3. Derate design curve chosen at TJ ≤ 150°C, where the maximum temperature of electrical test is performed.
4. Derate design curve chosen at TJ ≤ 125°C, and 110°C to show power rating where most users want to limit TJ in
their application.
FIGURE 8. Temperature-power derating for (RθJSP), base case mount (UB AND UBN).
25
MIL-PRF-19500/357M
Maximum Thermal Impedance
100
10
1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
Time (s)
TSP = +25°C, thermal resistance RθJSP = 90°C/W (solder mounted to heavy copper clad PCB).
* FIGURE 9. Thermal impedance graph (RθJSP) for 2N3634UB through 2N3637UB (UB AND UBN).
26
MIL-PRF-19500/357M
Maximum Thermal Impedance
100
10
1
0.1
100
0.000001
0.0001
0.01
10
0.00001
0.001
0.1
1
Time (s)
TC = +25°C, thermal resistance RθJC = 35°C/W (ambient case mount).
FIGURE 10. Thermal impedance graph (RθJC) for 2N3634 through 2N3637 and
2N3634L through 2N3637L (TO-5 and TO-39 Kovar).
27
MIL-PRF-19500/357M
Maximum Thermal Impedance
1000
100
10
1
10
1000
10000
0.001
0.1
100
0.01
0.000001
0.00001
0.0001
1
Time (s)
TA = +25°C, thermal resistance RθJA = 175°C/W (ambient free air cooled).
FIGURE 11. Thermal impedance graph (RθJA) for 2N3634 through 2N3637 and
2N3634L through 2N3637L (TO-5 and TO-39).
28
MIL-PRF-19500/357M
NOTES:
1. The input waveform is supplied by a pulse generator with the following characteristics:
tr ≤ 15 ns, tf ≤ 15 ns, ZOUT = 50 Ω, PW = 20 µs, duty cycle ≤ 2 percent.
2. Output waveforms are monitored on an oscilloscope with the following characteristics: tr ≤ 15 ns,
Rin ≥ 10 MΩ, Cin ≤ 11.5 pF.
3. VBB = 4.0 V dc for ton, 4.1 V dc for toff at point “A”.
4. Resistors shall be noninductive types.
5. The dc power supplies may require additional by-passing in order to minimize ringing.
FIGURE 12. Pulse response test circuit.
29
MIL-PRF-19500/357M
SOA Power Curve - Safe Design Tj=200C Rating
TO-39 at Ta=25C (Air Mounted)
10
1
1
1us
10us
100us
1ms
0.01
10ms
100ms
1000ms
DC
Spec Sheet A5 1000ms
0.001
1
10
100
1000
Voltage (V)
2N3637 TA = +25°C. A5 limits at 1,000 ms.
CE = 5V at 0.7A,
V
VCE = 50V at 0.07A,
VCE = 100V at 0.03A,
VCE = 125V at 0.02A.
FIGURE 13. Maximum safe operating area graph (continuous dc).
30
MIL-PRF-19500/357M
SOA Power Curve - Safe Design Tj=200C Rating
2N3637 ss357 TO-39 at Tc=25C (Case Mounted)
10
1
0.1
1us
10us
100us
1ms
0.01
10ms
100ms
DC to 1000ms
Unused
Spec Sheet A5 1000ms
0.001
1
10
100
1000
Voltage (V)
2N3637 TC = +25°C. A5 limits at 1,000 ms.
VCE = 5V at 1A,
V
CE = 50V at 0.095A,
VCE = 100V at 0.03A,
CE = 130V at 0.02A.
V
FIGURE 14. Maximum safe operating area graph (continuous dc).
31
MIL-PRF-19500/357M
SOA Power Curve - Safe Design Tj=200C Rating
UB at Ta=25C (FR4 PCB Mount)
10
1
Current (A)
0.1
1us
10us
100us
1ms
0.01
10ms
100ms
1000ms
DC
Spec Sheet A5 100ms
0.001
1
10
100
1000
Voltage (V)
2N3637UB TA = +25°C. A5 limits at 100 ms.
VCE = 5V at 0.5A,
VCE = 50V at 0.05A,
VCE = 85V at 0.03A,
VCE = 125V at 0.02A.
FIGURE 15. Maximum safe operating area graph for UB AND UBN (continuous dc).
32
MIL-PRF-19500/357M
SOA Power Curve - Safe Design Tj=200C Rating
2N3637UB ss357 LCC3 at Tsp=25C (Maximum Sink)
10
1
0.1
1us
10us
100us
1ms
0.01
10ms
100ms
1000ms
DC
Spec Sheet A5 100ms
0.001
1
10
100
1000
Voltage (V)
2N3637UB TSP = +25°C. A5 limits at 100 ms.
VCE = 5V at 0.5A,
V
CE = 50V at 0.05A,
VCE = 85V at 0.03A,
VCE = 125V at 0.02A.
FIGURE 16. Maximum safe operating area graph for UB AND UBN (continuous dc).
33
MIL-PRF-19500/357M
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these
personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging
requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or
Defense Agency, or within the Military Service’s system commands. Packaging data retrieval is available from the
managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting
the responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.
The notes specified in MIL-PRF-19500 are applicable to this specification.)
6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design
applications and logistic support of existing equipment.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Title, number, and date of this specification.
b. Packaging requirements (see 5.1).
c. Lead finish (see 3.4.1).
d. Product assurance level and type designator.
e. For die acquisition, the JANHC or JANKC letter version shall be specified (see figure 3).
f. Surface mount designation if applicable.
g. For acquisition of RHA designed devices, table II, subgroup 1 testing of group D is optional. If subgroup 1
testing is desired, it must be specified in the contract.
*
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or
not such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from DLA
Land and Maritime, ATTN: /VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil . An
online listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at
https://assist.dla.mil.
6.4 Supersession information. Devices covered by this specification supersede the manufacturers' and users'
Part or Identifying Number (PIN). The term Part or Identifying Number (PIN) is equivalent to the term part number
which was previously used in this specification. This information in no way implies that manufacturers' PINs are
suitable as a substitute for the military PIN.
34
MIL-PRF-19500/357M
*
6.5 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter
version (example JANHCA2N3634) will be identified on the QML.
JANHC and JANKC ordering information
Manufacturer
PIN
43611
31471
2N3634
2N3635
2N3636
2N3637
JANHCA2N3634, JANKCA2N3634
JANHCA2N3635, JANKCA2N3635
JANHCA2N3636, JANKCA2N3636
JANHCA2N3637, JANKCA2N3637
JANHCB2N3634, JANKCB2N3634
JANHCB2N3635, JANKCB2N3635
JANHCB2N3636, JANKCB2N3636
JANHCB2N3637, JANKCB2N3637
6.6 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
Custodians:
Army - CR
Navy - EC
Air Force - 85
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2012-088)
Review activities:
Army - AR, MI, SM
Navy - AS, MC, SH
Air Force - 19, 71
*
NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at https://assist.dla.mil.
35
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