JANSR2N3636UB [MICROSEMI]
Small Signal Bipolar Transistor, 1A I(C), PNP,;
| 型号： | JANSR2N3636UB |
| 厂家： | 
Microsemi |
| 描述： | Small Signal Bipolar Transistor, 1A I(C), PNP, |
| 文件： | 总3页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/357
DEVICES
LEVELS
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
2N3634
2N3634L
2N3634UB
2N3635
2N3635L
2N3635UB
2N3636
2N3636L
2N3636UB
2N3637
2N3637L
2N3637UB
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
2N3634* 2N3636*
2N3635* 2N3637*
Parameters / Test Conditions
Symbol
Unit
Collector-Emitter Voltage
VCEO
VCBO
VEBO
IC
140
140
5.0
1.0
175
175
5.0
1.0
Vdc
Vdc
Vdc
Adc
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
TO-5*
2N3634L, 2N3635L
2N3636L, 2N3637L
Total Power Dissipation @ TA = +25°C
@ TC = +25°C
1.0
5.0
1.5
W
W
W
PT **
UB: @ TC = +25°C
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
°C
* Electrical characteristics for “L” suffix devices are identical to the “non L”
corresponding devices.
** Consult 19500/357 for De-Rating curves.
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
TO-39* (TO-205AD)
2N3634, 2N3635
2N3636, 2N3637
Parameters / Test Conditions
Symbol Min. Max.
Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
2N3634, 2N3635
2N3636, 2N3637
140
175
V(BR)CEO
Vdc
Collector-Base Cutoff Current
VCB = 100Vdc
100
10
10
ηAdc
μAdc
μAdc
ICBO
VCB = 140Vdc
2N3634, 2N3635
2N3636, 2N3637
VCB = 175Vdc
Emitter-Base Cutoff Current
VEB = 3.0Vdc
3 PIN
2N3634UB, 2N3635UB
2N3636UB, 2N3637UB
50
10
ηAdc
μAdc
IEBO
VEB = 5.0Vdc
Collector-Emitter cutoff Current
ICEO
10
μAdc
VCE = 100Vdc
T4-LDS-0065 Rev. 1 (081247)
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/357
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
ON CHARACTERISTICS (1)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 0.1mAdc, VCE = 10Vdc
IC = 1.0mAdc, VCE = 10Vdc
IC = 10mAdc, VCE = 10Vdc
IC = 50mAdc, VCE = 10Vdc
IC = 150mAdc, VCE = 10Vdc
2N3634, 2N3636
2N3635, 2N3637
25
45
50
50
30
150
300
hFE
IC = 0.1mAdc, VCE = 10Vdc
IC = 1.0mAdc, VCE = 10Vdc
IC = 10mAdc, VCE = 10Vdc
IC = 50mAdc, VCE = 10Vdc
IC = 150mAdc, VCE = 10Vdc
55
90
100
100
60
Collector-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
IC = 50mAdc, IB = 5.0mAdc
0.3
0.6
VCE(sat)
Vdc
Vdc
Base-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
IC = 50mAdc, IB = 5.0mAdc
0.8
0.9
VBE(sat)
0.65
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 30mAdc, VCE = 30Vdc, f = 100MHz
2N3634, 2N3636
2N3635, 2N3637
1.5
2.0
8.0
8.5
|hfe|
Forward Current Transfer Ratio
IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz
2N3634, 2N3636
2N3635, 2N3637
40
80
160
320
hfe
hie
Small-Signal Short-Circuit Input Impedance
IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz
2N3634, 2N3636
2N3635, 2N3637
100
200
600
1200
Ω
μs
pF
pF
Small-Signal Open-Circuit Input Impedance
IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz
hoe
200
10
Output Capacitance
VCB = 20Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz
Cobo
Input Capacitance
VEB = 1.0Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0MHz
Cibo
75
Noise Figure
f = 100Hz
f = 1.0kHz
f = 10kHz
5.0
3.0
3.0
VCE = 10Vdc, IC = 0.5mAdc, Rg = 1.0kΩ
NF
dB
(1) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%
T4-LDS-0065 Rev. 1 (081247)
Page 2 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/357
SAFE OPERATING AREA
DC Tests
TC = 25°C, 1 Cycle, t = 1.0s
Test 1
VCE = 100Vdc, IC = 30mAdc
2N3634, 2N3635
2N3636, 2N3637
VCE = 130Vdc, IC = 20mAdc
Test 2
VCE = 50Vdc, IC = 95mAdc
Test 3
VCE = 5.0Vdc, IC = 1.0Adc
T4-LDS-0065 Rev. 1 (081247)
Page 3 of 3
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