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JANSR2N7261 [MICROSEMI]

Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, MODIFIED TO-39, 3 PIN;
JANSR2N7261
型号： JANSR2N7261
厂家： Microsemi    Microsemi
描述：

Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, MODIFIED TO-39, 3 PIN

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TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
RADIATION HARDENED N-CHANNEL MOSFET  
Reference MIL-PRF-19500/601  
DEVICES  
LEVELS  
2N7261  
2N7261U  
JANSR (100K RAD(Si))  
JANSF (300K RAD(Si))  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Drain – Source Voltage  
Symbol  
VDS  
Value  
100  
Unit  
Vdc  
Vdc  
Gate – Source Voltage  
VGS  
± 20  
Continuous Drain Current  
ID1  
ID2  
8.0  
Adc  
Adc  
TC = +25°C  
Continuous Drain Current  
5.0  
TC = +100°C  
Max. Power Dissipation  
Ptl  
25 (1)  
W
Ω
Drain to Source On State Resistance  
Operating & Storage Temperature  
Rds(on)  
Top, Tstg  
0.180 (2)  
-55 to +150  
°C  
TO-205AF  
(modified TO-39)  
JANSR2N7261, JANSF2N7261  
See Figure 1  
Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C  
(2) VGS = 12Vdc, ID = 5.0A  
PRE-IRRADIATION ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise  
noted)  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
Drain-Source Breakdown Voltage  
V(BR)DSS  
100  
Vdc  
VGS = 0V, ID = 1mAdc  
Gate-Source Voltage (Threshold)  
VDS ≥ VGS, ID = 1.0mA  
VGS(th)1  
VGS(th)2  
VGS(th)3  
2.0  
1.0  
4.0  
5.0  
Vdc  
VDS ≥ VGS, ID = 1.0mA, Tj = +125°C  
VDS ≥ VGS, ID = 1.0mA, Tj = -55°C  
Gate Current  
VGS = ±20V, VDS = 0V  
IGSS1  
IGSS2  
±100  
±200  
nAdc  
VGS = ±20V, VDS = 0V, Tj = +125°C  
Drain Current  
VGS = 0V, VDS = 80V  
18 PIN LEADLESS CHIP CARRIER  
JANSR2N7261U, JANSF2N7261U  
See Figure 2  
IDSS1  
IDSS2  
IDSS3  
25  
1.0  
0.25  
µAdc  
mAdc  
mAdc  
VGS = 0V, VDS = 100V, Tj = +125°C  
VGS = 0V, VDS = 80V, Tj = +125°C  
Static Drain-Source On-State Resistance  
VGS = 12V, ID = 5.0A pulsed  
rDS(on)1  
rDS(on)2  
0.180  
0.185  
Ω
Ω
V
GS = 12V, ID = 8.0A pulsed  
Tj = +125°C  
GS = 12V, ID = 5.0A pulsed  
V
rDS(on)3  
0.35  
Ω
Diode Forward Voltage  
VGS = 0V, ID = 8.0A pulsed  
VSD  
1.5  
Vdc  
T4-LDS-0119 Rev. 2 (101017)  
Page 1 of 5  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
RADIATION HARDENED N-CHANNEL MOSFET  
Reference MIL-PRF-19500/601  
DYNAMIC CHARACTERISTICS  
Parameters / Test Conditions  
Symbol  
Min.  
Min.  
Max.  
Unit  
Gate Charge:  
Qg(on)  
Qgs  
Qgd  
On-State Gate Charge  
Gate to Source Charge  
Gate to Drain Charge  
50  
10  
20  
nC  
VGS = 12V, ID = 8.0A  
VDS = 50V  
SWITCHING CHARACTERISTICS  
Parameters / Test Conditions  
Symbol  
Max.  
Unit  
Switching time tests:  
Turn-on delay time  
Rinse time  
Turn-off delay time  
Fall time  
ID = 8.0A, VGS = 12Vdc,  
td(on)  
tr  
td(off)  
tf  
25  
32  
40  
40  
ns  
Gate drive impedance = 7.5Ω,  
VDD = 50Vdc  
di/dt ≤ 100A/µs, VDD ≤ 30V,  
IF = 8.0A  
Diode Reverse Recovery Time  
trr  
270  
ns  
POST-IRRADIATION ELECTRICAL CHARACTERISTICS (3) (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
Drain-Source Breakdown Voltage  
V(BR)DSS  
100  
Vdc  
Vdc  
VGS = 0V, ID = 1mAdc  
Gate-Source Voltage (Threshold)  
VDS ≥ VGS, ID = 1.0mA MSR  
VGS(th)1  
VGS(th)1  
2.0  
1.25  
4.0  
4.5  
VDS ≥ VGS, ID = 1.0mA MSF  
Gate Current  
VGS = ±20V, VDS = 0V  
IGSS1  
±100  
nAdc  
Drain Current  
V
GS = 0V, VDS = 80V MSR  
IDSS1  
25  
50  
µAdc  
Vdc  
VGS = 0V, VDS = 80V MSF  
Static Drain-Source On-State Voltage  
VGS = 12V, ID = 5.0A pulsed MSR  
VDS(on)  
0.9  
1.2  
VGS = 12V, ID = 5.0A pulsed MSF  
Diode Forward Voltage  
VGS = 0V, ID = 8.0A pulsed  
VSD  
1.5  
Vdc  
NOTE:  
(3) Post-Irradiation Electrical Characteristics apply to devices subjected to Steady State Total Dose Irradiation testing in  
accordance with MIL-STD-750 Method 1019. Separate samples are tested for VGS bias (12V), and VDS bias (80V)  
conditions.  
T4-LDS-0119 Rev. 2 (101017)  
Page 2 of 5  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
RADIATION HARDENED N-CHANNEL MOSFET  
Reference MIL-PRF-19500/601  
Single Event Effect (SEE) Characteristics:  
Heavy Ion testing of the 2N7261 device has been characterized at the Texas A&M cyclotron. The  
following SOA curve has been established using the elements, LET, range, and Total Energy  
conditions as shown:  
2N7261  
TAMU Ar  
110  
LET=8.3  
Range =192um  
Total Energy=531MeV  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TAMU Kr  
LET=27.8  
Range =134um  
Total Energy=1032MeV  
TAMU Ag  
LET=42.2  
Range =119um  
Total Energy=1289MeV  
TAMU Au  
LET=85.4  
Range =118um  
Total Energy=2247MeV  
0
-5  
-10  
-15  
-20  
-25  
Gate Bias, V  
It should be noted that total energy levels are considered to be a factor in SEE characterization.  
Comparisons to other datasets should not be based on LET alone. Please consult factory for more  
information.  
T4-LDS-0119 Rev. 2 (101017)  
Page 3 of 5  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
RADIATION HARDENED N-CHANNEL MOSFET  
Reference MIL-PRF-19500/601  
Figure 1: Case Outline and Pin Configuration for JANSR2N7261 & JANSF2N7261  
T4-LDS-0119 Rev. 2 (101017)  
Page 4 of 5  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
RADIATION HARDENED N-CHANNEL MOSFET  
Reference MIL-PRF-19500/601  
Figure 2: Case Outline and Pin Configuration for JANSR2N7261U & JANSF2N7261U  
T4-LDS-0119 Rev. 2 (101017)  
Page 5 of 5  

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