JANTX1N5811CBUS_技术文档

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 28 November 2009.

INCH-POUND

MIL-PRF-19500/742A

28 August 2009

SUPERSEDING

MIL-PRF-19500/742

1 June 2007

PERFORMANCE SPECIFICATION SHEET

* SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER,

TYPES 1N5802CB, 1N5804CB, 1N5806CB, 1N5807CB, 1N5809CB, AND 1N5811CB,

1N5802CBUS, 1N5804CBUS, 1N5806CBUS, 1N5807CBUS, 1N5809CBUS, AND 1N5811CBUS,

JAN, JANTX, AND JANTXV

* Inactive for new design after 28 September 2009. For new design use -

1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, 1N5802US,

1N5804US, 1N5806US, 1N5807US, 1N5809US, AND 1N5811US on MIL-PRF-

19500/477.

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for silicon, fast recovery, power rectifier

diodes. Four levels of product assurance are provided for each encapsulated (noncavity double plug diodes utilizing

category 3 metallurgical bonding) device types as specified in MIL-PRF-19500. This category 3 metallurgical

bonding is also known as compression bonds (CB).

* 1.2 Physical dimensions. See figures 1(similar to a DO-7) and 2 (square end-cap surface mount).

1.3 Maximum ratings. Unless otherwise specified, T_A= +25°C.

1.3.1 Ratings applicable to all Part or Identifying Numbers (PIN). T_STG= T_J(max)= -65°C to +175°C.

1.3.2 Ratings applicable to individual types.

Col. 1

Col. 2

V_RWM

Col. 3

I_O(L)

T_L= +75°C

L = .25 in.

(6.35 mm)

(2) (3)

Col. 4

I_O1

T_A=

+55°C

(4) (5) (6)

Col. 5

Col. 6

t_rr

Col. 7

Col. 8

Col. 9

I_FSMat

+25°C

operating at

R_θJL

at

L = .375 in.

(9.52 mm)

Types

(1)

R_θJEC

(7)

R

θJX

(6)

I_O1

t_p= 8.3 ms

A(pk)

A

ns

°C/W

36

22

°C/W

13

°C/W

154

52

1N5802CB, CBUS

1N5804CB, CBUS

1N5806CB, CBUS

1N5807CB, CBUS

1N5809CB, CBUS

1N5811CB, CBUS

50

2.5

6.0

1.0

3.0

35

125

25

30

100

150

50

100

150

13

6.5

22

52

See notes on next page.

Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,

Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

Semiconductor@dscc.dla.mil . Since contact information can change, you may want to verify the currency of

this address information using the ASSIST Online database at http://assist.daps.dla.mil.

AMSC N/A

FSC 5961

MIL-PRF-19500/742A

1.3.2 Ratings applicable to individual types - Continued.

(1) T_EC= T_Lat L = 0 or T_{end tab}for US suffix devices.

(2) Derate at 24 mA/ºC for T_Labove +75 ºC for 2.5 amp ratings.

(3) Derate at 60 mA/ºC for T_Labove +75 ºC for 6.0 amp ratings

(4) Derate at 8.33 mA/ºC for T_Aabove +55 ºC for 1.0 amp ratings.

(5) Derate at 25 mA/ºC for T_Aabove +55 ºC for 3.0 amp ratings

(6) For the 1 and 3 amp ratings at 55ºC, These I_Oratings are for a thermally (PC boards or other) mounting

methods where the lead or end-cap temperatures cannot be maintained as shown in col. 3 and where thermal

resistance from mounting point to ambient is still sufficiently controlled where T_J(MAX)in 1.3.1 is not exceeded.

This equates to R_θJX≤ 154ºC/W for the 1N5802CB-1N5806CB and R_θJX≤ 52ºC/W for the 1N5807CB-

1N5811CB in col. 9. Also see application notes in 6.4.1 thru 6.4.4.

(7) US suffix devices only.

1.4 Primary electrical characteristics. Unless otherwise specified, T_A= +25°C.

I

_R1at V_R= V_RWM

I_R2at V_R= V_RWM

Types

V_BRat 100 µA

Pulse ≤ 20 ms

T_A= +25°C

T_A= +125°C

Pulsed V_R≤ 20ms

µA

Pulsed V_R≤ 20ms¸

V

µA

1N5802CB, CBUS

1N5804CB, CBUS

1N5806CB, CBUS

1N5807CB, CBUS

1N5809CB, CBUS

1N5811CB, CBUS

60

110

160

60

110

160

1.0

5.0

175

525

2

MIL-PRF-19500/742A

Dimensions

1N5802CB, 1N5804CB, 1N5806CB 1N5807CB, 1N5809CB, 1N5811CB

Inches Millimeters Inches Millimeters

Min Min

Ltr.

Notes

Max

.085

.250

.032

1.30

Min

Max

2.16

6.35

0.81

33.02

Max

.142

.300

.042

1.30

Min

Max

3.61

7.62

1.07

33.02

BD

BL

LD

LL

.065

.125

.027

.700

1.65

3.18

0.69

.115

.130

.037

.900

2.92

3.30

0.94

4

3

17.78

22.86

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Dimension BL shall include the entire body including slugs and sections of the lead over which

the diameter is uncontrolled. This uncontrolled area is defined as the zone between the edge of

the diode body and extending .050 inch (1.27 mm) onto the leads.

4. Dimension BD shall be measured at the largest diameter.

5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

* FIGURE 1. Physical dimensions (similar to a DO-7).

3

MIL-PRF-19500/742A

Dimensions

D-5A

D-5B

1N5802CBUS, 1N5804CBUS,

1N5806CBUS

1N5807CBUS, 1N5809CBUS,

1N5811CBUS

Ltr.

Inches

Max

Millimeters

Inches

Millimeters

Notes

Min

.091

.168

Min

Max

2.62

5.08

0.71

Min

Max

.148

.225

.028

Min

Max

3.76

5.72

0.71

BD

BL

ECT .019

.103

.200

.028

2.31

4.27

0.48

0.08

.137

.200

.019

.003

3.48

5.08

0.48

0.08

S

.003

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Dimensions are pre-solder dip.

4. Minimum clearance of glass body to mounting surface on all orientations.

5. Cathode marking to be either in color band, three dots spaced equally, or a color dot on the face

of the end tab.

6. Color dots will be .020 inch (0.51 mm) diameter minimum and those on the face of the end tab

shall not lie within .020 inch (0.51 mm) of the mounting surface.

7. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

* FIGURE 2. Physical dimensions of surface mount family (square body surface mount).

4

MIL-PRF-19500/742A

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this

specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-19500

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-750 Test Methods for Semiconductor Devices.

-

Semiconductor Devices, General Specification for.

-

(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or

http://assist.daps.dla.mil. or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,

Philadelphia, PA 19111-5094.)

* 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the

text of this document and the references cited herein, the text of this document takes precedence. Nothing in this

document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500 and as follows:

EC. . . . . . . . . . . . . . End-cap.

I_(BR). . . . . . . . . . . . .Current for testing breakdown voltage.

V_fr. . . . . . . . . . . . . . Forward recovery voltage.

3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in

MIL-PRF-19500, and figures 1 and 2 herein.

3.4.1 Diode construction. These devices shall be metallurgically bonded-thermally-matched-noncavity-double plug

construction, utilizing a category III bond, in accordance with MIL-PRF-19500. Full area metallurgical bond is

required. (i.e. slug tungsten or moly to die). No point contacts are allowed. Silver button dumet design is prohibited.

US version devices shall be structurally identical to the non-surface mount devices except for lead terminations.

3.4.2 Lead finish. Unless otherwise specified, lead or end-cap finish shall be solderable in accordance with

MIL-PRF-19500, MIL-STD-750, and herein. When solder alloy is used for finish, the maximum lead temperature is

limited to 175°C maximum. Where a choice of finish is desired, it shall be specified in the acquisition document (see

6.2).

5

MIL-PRF-19500/742A

3.5 Marking. Devices shall be marked as specified in MIL-PRF-19500.

3.5.1 Marking of US version. For US version only, all marking may be omitted from the device except for the

cathode marking. All marking which is omitted from the body of the device shall appear on the label of the initial

container.

3.5.2 Polarity. The polarity shall be indicated with a contrasting color band to denote the cathode end. Alternately,

for surface mount (US) devices, a minimum of three evenly spaced contrasting color dots around the periphery of the

cathode end may be used. No color coding will be permitted.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I herein.

3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4) and tables I and II herein.

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

herein.

4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not request the performance of

table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on

the first inspection lot to this revision to maintain qualification.

4.2.2 JANHC and JANKC die. Qualification shall be in accordance with appendix G of MIL-PRF-19500 and as

specified herein.

6

MIL-PRF-19500/742A

* 4.3 Screening (JANTXV and JANTX levels only). Screening shall be in accordance with appendix E, table E-IV of

MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see

appendix E, table

E-IV of

JANTXV and JANTX level

MIL-PRF-19500)

(1) 3c

9

Thermal impedance (see 4.3.1)

Not required

10

Method 1038 of MIL-STD-750, condition A

11

Required

I_R1and V_FM1

12

Required, see 4.3.2

(2) 13

Subgroup 2 of table I herein;∆I_R1≤±100

percent of initial reading or ±250 nA dc

(1N5802, 1N5804, 1N5806) or ±1 µA dc

(1N5807, 1N5809, 1N5811), whichever is

greater.

∆V_FM1≤ ±0.05 V dc.

Scope-display evaluation (see 4.5.2).

(1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in

screening requirements.

(2) Z

is not required in screen 13, if already previously performed.

θJX

4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method

3101 of MIL-STD-750 using the guidelines in that method for determining I_M, I_H, t_H, and K factor where appropriate.

Measurement delay time (t_MD) = 70 µs max. The limits will be statistically derived. See table E-IX of MIL-PRF-19500,

group E, subgroup 4 and table II, subgroup 4 herein. See figures 3, 4, 5, and 6 for thermal impedance.

* 4.3.2 Free air power burn-in conditions. Power burn-in conditions (ACOL or dc) as follows: Test conditions shall

be in accordance with method 1038 of MIL-STD-750, condition B (see 4.5.3, 4.5.3.1). Adjust T_A, I_O,or I_Fto achieve

T_J= 135°C minimum, 175°C maximum.

a. ACOL: V_R= rated V_RWM; f = 60 Hz; I_O(min) = col. 4 of 1.3.2, (see 4.5.3).

b. DC: I_F(min) = col. 4 of 1.3.2.

With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, T_J,

mounting conditions) may be used. A justification demonstrating equivalence is required. In addition, the

manufacturing site’s burn-in data and performance history will be essential criteria for burn-in modification approval.

7

MIL-PRF-19500/742A

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as

specified herein.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I

herein.

* 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in appendix E, table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and herein.

Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein.

* 4.4.2.1 Group B inspection, appendix E, table E-VIb (JAN, JANTX, and JANTXV of MIL-PRF-19500).

Subgroup

B3

Method Condition

1027

I_O= I_O1rated minimum (see col. 4 of 1.3.2); adjust I_Oto achieve T = 150° C

J

minimum, apply V = rated V

RWM

(see col. 2 of 1.3.2), f = 50 - 60 Hz (see

R

4.5.3.1). T_A= 55°C max. For irradiated devices, include t_rras an end-point

measurement.

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in

accordance with table I, subgroup 2 herein.

* 4.4.3.1 Group C inspection, appendix E, table E-VII of MIL-PRF-19500.

Subgroup

C2

Method Condition

2036

Axial devices − Tension: Condition A, 4 pounds, t = 15s - 1N5802, 1N5804,

1N5806. 12 pounds - 1N5807, 1N5809, 1N5811. Fatigue: Condition E, 2

pounds. (Lead fatigue is not applicable to US diodes).

*

C2

US devices – Tension: condition A; 4 pounds, t = 15s for 1N5802US,

1N5804US, 1N5806US. Condition A, 12 pounds, t = 15s for 1N5807US,

1N5809US, 1N5811US. Suitable fixtures may be used to pull the end-caps in a

manner which does not aid construction. Reference to axial lead may be

interpreted as end-cap with fixtures used for mounting (see figure 7 herein).

(Lead fatigue is not applicable to US diodes).

C5

C6

4081

1027

R

_θJL(maximum) see col. 7 of 1.3.2 and 4.3.1 herein; L = .375 inch (9.53 mm).

For surface mount devices (US version), R_θJECsee col. 8 of 1.3.2 and 4.3.1

herein.

I_O= I_O1rated minimum (see col. 4 of 1.3.2); adjust I_Oto achieve

T_J= 150°C minimum, apply V_R= rated V_RWM(see col. 2 of 1.3.2), f = 50 - 60 Hz

(see 4.5.3.1). T_A= 55°C max. For irradiated devices, include t_rras an end-point

measurement.

4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and as specified herein. Electrical measurements

(end-points) shall be in accordance with table I, subgroup 2 herein.

8

MIL-PRF-19500/742A

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.

4.5.2 Scope display evaluation. Scope display evaluation shall be stable in accordance with method 4023 of

MIL-STD-750, condition A. Scope display may be performed on ATE (automatic test equipment) for screening only

with the approval of the qualifying activity. Scope display in table I, subgroup 4 shall be performed on a curve tracer.

The reverse current (I_BR) over the knee shall be 500 µA peak.

4.5.3 Burn-in and life tests. These tests shall be conducted with a half-sine waveform of the specified peak voltage

impressed across the diode in the reverse direction followed by a half-sine waveform of the specified average

rectified current. The forward conduction angle of the rectified current shall be neither greater than 180 degrees, nor

less than 150 degrees.

4.5.3.1 Free air burn-in and life tests. The use of a current limiting or ballast resistor is permitted provided that

each DUT still sees the minimum I_Oor I_Fand that the minimum applied voltage, where applicable, is maintained

through-out the burn-in period. Use method 3100 of MIL-STD-750 to measure T_J.

4.5.4 Thermal resistance. Thermal resistance measurement shall be performed in accordance with method 4081

of MIL-STD-750 using the guidelines in that method for determining I_M, I_H, and t_H. Measurement delay time t_MD= 70

µs max. See table E-IX of MIL-PRF-19500, subgroup 4, and figures 3, 4, 5, and 6 herein. Forced moving air or draft

shall not be permitted across the device during test.

9

MIL-PRF-19500/742A

TABLE I. Group A inspection.

Inspection

1/

MIL-STD-750

Conditions

Limit

Unit

Symbol

Method

2071

Min

Max

Subgroup 1

Visual and mechanical

examination

Subgroup 2

Thermal impedance 2/

Forward voltage

3101

4011

See 4.3.1

°C/W

Z

θJX

Duty cycle ≤ 2 percent (pulsed

see 4.5.1); t_p= 8.3 ms (max)

1N5802CB, CBUS,

1N5804CB, CBUS,

1N5806CB, CBUS

0.875

0.975

V

I_FM= 1.0 A

I_FM= 2.5 A

V_FM1

1N5802CB, CBUS,

1N5804CB, CBUS,

1N5806CB, CBUS

V_FM2

Forward voltage

4011

Duty cycle ≤ 2 percent (pulsed

see 4.5.1); t_p= 8.3 ms (max)

1N5807CB, CBUS,

1N5809CB, CBUS,

1N5811CB, CBUS

0.865

0.875

0.925

V

I_FM= 3.0 A

I_FM= 4.0 A

V_FM3

V_FM4

V_FM5

I_R1

1N5807CB, CBUS,

1N5809CB, CBUS,

1N5811CB, CBUS

1N5807CB, CBUS

1N5809CB, CBUS

1N5811CB, CBUS

I_FM= 6.0 A

Reverse current

4016

DC or equivalent pulse method

1N5802CB, CBUS

1N5804CB, CBUS

1N5806CB, CBUS

1N5807CB, CBUS

1N5809CB, CBUS

1N5811CB, CBUS

1.0

5.0

µA

V_R= 50 V

V_R= 100 V

V_R= 150 V

V_R= 50 V

V_R= 100 V

V_R= 150 V

See footnotes at end of table.

10

MIL-PRF-19500/742A

TABLE I. Group A inspection - Continued.

Inspection

1/

MIL-STD-750

Limit

Unit

Symbol

Method

4021

Conditions

Min

Max

Subgroup 2 - continued

Breakdown voltage

I_(BR)= 100 µA

V_(BR)1

1N5802CB, CBUS,

1N5807CB, CBUS

60

V

1N5804CB, CBUS,

1N5809CB, CBUS

110

160

1N5806CB, CBUS,

1N5811CB, CBUS

Subgroup 3

High temperature

operation:

T_A= +125°C minimum.

Reverse current

4016

DC or equivalent pulse method

I_R2

1N5802CB, CBUS

1N5804CB, CBUS

175

µA

V_R= 50 V

V_R= 100 V

1N5806CB, CBUS

1N5807CB, CBUS

1N5809CB, CBUS

1N5811CB, CBUS

175

525

µA

V_R= 150 V

V_R= 50 V

V_R= 100 V

V_R= 150 V

Forward voltage

4011

Duty cycle ≤ 2 percent (pulsed

see 4.5.1); t_p= 8.3 ms (max)

1N5802CB, CBUS,

1N5804CB, CBUS,

1N5806CB, CBUS

0.800

V

I_FM= 1.0 A

I_FM= 4.0 A

V_FM6

1N5807CB, CBUS,

1N5809CB, CBUS,

1N5811CB, CBUS

V_FM7

See footnotes at end of table.

11

MIL-PRF-19500/742A

TABLE I. Group A inspection - Continued.

Inspection

1/

MIL-STD-750

Limit

Unit

Symbol

Method

4011

Conditions

Min

Max

Low-temperature

operation:

T_A= -65°C minimum.

Forward voltage

Duty cycle ≤ 2 percent (pulsed

see 4.5.1); tp = 8.3 ms (max)

1N5802CB, CBUS,

1N5804CB, CBUS,

1N5806CB, CBUS

1.075

V

I_FM= 1.0 A

I_FM= 4.0 A

I_(BR)= 100 µA

V_FM8

V_FM9

V_(BR)2

1N5807CB, CBUS,

1N5809CB, CBUS,

1N5811CB, CBUS

Breakdown voltage

4021

1N5802CB, CBUS,

1N5807CB, CBUS

50

V

1N5804CB, CBUS,

1N5809CB, CBUS

100

150

1N5806CB, CBUS,

1N5811CB, CBUS

Subgroup 4

Reverse recovery time

4031

Condition B

t_rr

1N5802CB, CBUS,

1N5804CB, CBUS,

1N5806CB, CBUS

25

30

ns

I_F= I_RM= 0.5 A

I_{R (REC)}= 0.05 A(pk)

di/dt = 65 A/µs (min)

1N5807CB, CBUS,

1N5809CB, CBUS,

1N5811CB, CBUS

I_F= I_RM= 1.0 A

I_{R (REC)}= 0.1 A(pk)

di/dt = 100 A/µs (min)

Capacitance

4001

V_R= 10 V; f = 1 MHz;

V_sig= 50 mV (p-p)

C_J

1N5802CB, CBUS,

1N5804CB, CBUS,

1N5806CB, CBUS

25

60

pF

1N5807CB, CBUS,

1N5809CB, CBUS,

1N5811CB, CBUS

See footnotes at end of table.

12

MIL-PRF-19500/742A

TABLE I. Group A inspection - Continued.

Inspection

1/

MIL-STD-750

Limit

Unit

Symbol

Method

4026

Conditions

Min

Max

Subgroup 4 - continued

Forward recovery voltage

t_r= 8 ns

V_(peak)

1N5802CB, CBUS,

1N5804CB, CBUS,

1N5806CB, CBUS

2.2

V (pk)

I_F= 250 mA

1N5807CB, CBUS,

1N5809CB, CBUS,

1N5811CB, CBUS

I_F= 500 mA

Forward recovery time

4026

t_p≥ 20 ns, t_r= 8 ns, the test is

t_fr

measured at V_FR= 1.1 x V_F

1N5802CB, CBUS,

1N5804CB, CBUS,

1N5806CB, CBUS

15

ns

I_FM= 250 mA

I_FM= 500 mA

1N5807CB, CBUS,

1N5809CB, CBUS,

1N5811CB, CBUS

Scope display evaluation

Subgroup 5

4023

4066

See 4.5.2, n = 116, c = 0

Not applicable

Subgroup 6

Forward surge

I_FSM= rated (see 1.3.2); ten

surges of 8.3 ms each at 1

minute intervals superimposed

on I_O= I_O1rated (see 1.3.2);

V_RWM= rated (see 1.3.2); T_A=

+ 25°C.

Electrical measurements

See table I, subgroup 2 except

Z_θJX

.

Subgroup 7

Not applicable

1/ For sampling plan, see MIL-PRF-19500.

2/ Not applicable to JANHC and JANKC devices.

13

MIL-PRF-19500/742A

* TABLE II. Group E inspection (all quality levels) for qualification and requalification only.

Inspection

MIL-STD-750

Conditions

Sampling

plan

Method

Subgroup 1A

45 devices

c = 0

Temperature cycling (air

to air)

1051

1071

20 cycles, except high temperature shall be 150°C and

low temperature shall be -195°C.

Hermetic seal

Electrical measurement

Subgroup 1B

See table I, subgroup 2.

45 devices

c = 0

Temperature cycling (air

to air)

1051

1071

-65°C to +175°C, 500 cycles.

Hermetic seal

Electrical measurement

Subgroup 2

See table I, subgroup 2.

22 devices

c = 0

Steady-state dc blocking

life

1048

t = 1,000 hours; T_A= +150°C; V_Rdc = 80 - 85 percent

rated V_RWM(see 1.3.2).

Electrical measurement

See table I, subgroup 2, except Z_θ_JXneed not to be

performed. For irradiated devices, include t_rr,V_F, and I_R

as end-point measurements.

Sample size

N/A

Subgroup 4

Thermal impedance

curves

See MIL-PRF-19500.

Subgroups 5 and 6

Not applicable

14

MIL-PRF-19500/742A

* TABLE II. Group E inspection (all quality levels) for qualification and requalification only - Continued.

Inspection

MIL-STD-750

Conditions

Sampling

plan

Method

4065

Subgroup 8

n = 45

Peak reverse power

Peak reverse power, (P_RM) = shall be characterized by

the supplier and this data shall be available to the

Government. Test shall be performed on each sublot.

Electrical measurement

During the P_RMtest, the voltage (V_BR) shall be monitored

to verify it has not collapsed. Any collapse in V_BRduring

or after the P_RMtest or rise in leakage current (I_R) after

the test that exceeds I_R1in table I shall be considered a

failure to that level of applied P_RM. Progressively higher

levels of P_RMshall be applied until failure occurs on all

devices within the chosen sample size.

Subgroup 9

n = 45

Resistance to glass

cracking

1057

4066

Step stress to destruction by increasing cycles or up to a

maximum of 25 cycles.

Subgroup 10

22 devices

c = 0

Forward surge

Condition A, I_FSM= rated (see 1.3.2); ten surges of 8.3

ms each at 1 minute intervals superimposed on I_O= I_O1

rated (see 1.3.2); V_RWM= rated (see 1.3.2); T_A= + 25°C.

Electrical measurement

See table I, subgroup 2.

15

MIL-PRF-19500/742A

Maximum Thermal Impedance

50

Design Curve

10

5

1

0.5

0.001

0.01

0.1

1

10

50

Heating Time (sec)

Z

_θJX= 4°C/W at 10 ms.

FIGURE 3. Thermal impedance curve, R

θJL

= 36°C/W for 1N5802CB, 1N5804CB, 1N5806CB.

16

MIL-PRF-19500/742A

Maximum Thermal Impedance

20

10

5

Design Limit

1

0.005 0.01

0.1

1

10

50

Heating Time (sec)

Z

_θJX= 4°C/W at 10 ms.

FIGURE 4. Thermal impedance curve R

θJEC

= 13°C/W for 1N5802CBUS, 1N5804CBUS, 1N5806CBUS.

17

MIL-PRF-19500/742A

Maximum Thermal Impedance

50

Design Limit

10

5

1

0.5

0.2

0.001

0.01

0.1

1

10

50

Heating Time (sec)

Z

_θJX= 1.5°C/W at 10 ms.

FIGURE 5. Thermal impedance curve R

θJL

= 22°C/W for 1N5807CB, 1N5809CB, 1N5811CB.

18

MIL-PRF-19500/742A

Maximum Thermal Impedance

10

5

Design Limit

1

0.5

0.2

0.001

0.01

0.1

1

10 20

Heating Time (sec)

Z

_θJX= 1.5°C/W at 10 ms.

FIGURE 6. Thermal impedance curve R

θJEC

= 6.5°C/W for 1N5807CBUS, 1N5809CBUS, 1N5811CBUS.

19

MIL-PRF-19500/742A

FIGURE 7. US terminal strength mounting.

20

MIL-PRF-19500/742A

5. PACKAGING

5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order

(see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel

need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are

maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or

within the Military Service’s system commands. Packaging data retrieval is available from the managing Military

Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible

packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.

The notes specified in MIL-PRF-19500 are applicable to this specification.)

6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design

applications and logistic support of existing equipment.

6.2 Acquisition requirements. Acquisition documents should specify the following:

a. Title, number, and date of this specification.

b. Packaging requirements (see 5.1).

c. Lead finish (see 3.4.2).

d. Product assurance level and type designator.

* 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,

at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not

such products have actually been so listed by that date. The attention of the contractors is called to these

requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal

Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the

products covered by this specification. Information pertaining to qualification of products may be obtained from

Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail

vqe.chief@dla.mil. An online listing of products qualified to this specification may be found in the Qualified Products

Database (QPD) at http://assist.daps.dla.mil.

6.4 Applications data.

6.4.1 Half-sine-wave application with 1N5807CB(US) to 1N5811CB(US). For a PCB mounting example with FR4

material where the full 3 amp I_Orating (half-sine-wave) is used at a T_Jof 175ºC and ambient temperature of 55ºC,

the following steps guide the user in what the PCB pad size will need to be with 1 oz, 2 oz, and 3 oz copper for a

1N5807CB to 1N5811CB or 1N5807CBUS to 1N5811CBUS. For axial-leaded, the lead length for mounting will be

.187 inch (4.76 mm) or less from body to entry point on PCB surface. See 6.4.3 for the smaller example devices

1N5802CB to 1N5806CB or 1N5802CB(US) to 1N5806CB(US).

a. Use the I_Oversus Po curve on figure 8 to look up 3 amps (X-axis) and follow up to the T_J=175ºC curve (lower)

for 2.30 watts.

b. Calculate maximum thermal resistance needed (175ºC - 55ºC) / 2.30 W = 52ºC/W.

c. Look up thermal resistance of 52ºC/W on Y-axis using a thermal resistance versus pad area plot on one of the

three curves on figure 9 for different weights of copper cladding and then intersect curve horizontally to get

answer. These curves assume still air, horizontal position.

d. In this example, the answer is: 1 oz PCB = .5 in²(1.27 mm²), 2 oz PCB = .3 in²(0.76 mm²), 3 oz PCB =

.2 in²(0.51 mm²) for each pad.

e. Add a conservative guard-band to the pad size (larger) to keep T_Jbelow 175ºC.

21

MIL-PRF-19500/742A

6.4.2 Square-wave application with 1N5807CB(US) to 1N5811CB(US). For a PCB mounting example with FR4

material to support a 1 amp I_Osquare wave switching at a 0.50 duty factor (50 percent duty cycle) at T_J= 125ºC and

ambient temperature of 55ºC, the following steps guide the user in what the PCB pad size will need to be with 1 oz, 2

oz, and 3 oz copper.

a. Find size of copper pads on standard FR4 PCB to support operation at 1 amp I_Osquare wave switching at a

0.50 duty factor (50 percent duty cycle) at T_J= 125ºC with T_A= 55ºC.

b. Calculate peak I_F= 1 A / 0.50 duty factor = 2 amps.

c. Use the V_Fversus I_Fcurve on figure 10 to look up I_F= 2 A (Y-axis) and follow across to the T_J= 125ºC curve

(middle) for V_F= 0.65 V.

d. Calculate power = I_F* V_F* duty factor = 2 * 0.65 * 0.50 = 0.65 W.

e. Calculate maximum thermal resistance needed (125ºC – 55ºC) / 0.65 W = 107ºC/W.

f. Look up thermal resistance of 107ºC/W on the Y-axis using a thermal resistance versus pad area plot on one

of the three curves on figure 9 for different weights of copper cladding and then intersect curve horizontally to

get answer. Curves assume still air, horizontal position.

g. In this example, the answer is: 1 oz PCB = .058 in²(1.4732 mm²), 2 oz PCB = .038 in²(0.9652 mm²),

3 oz PCB = .024 in²(0.6096 mm²) for each pad.

h. A conservative pad guard-band is optional since T_Jis only 125ºC. NOTE: Multilayer PCBs, forced air cooling

will improve performance. Closed confinement of the PCB will do the opposite. Use sound thermal

management.

6.4.3 Half-sine-wave application with 1N5802CB(US) to 1N5806CB(US). For a PCB mounting example with FR4

material where the full 1 amp I_Orating (half-sine-wave) is used at a T_Jof 175ºC and ambient temperature of 55ºC,

the following steps guide the user in what the PCB pad size will need to be with 1 oz, 2 oz, and 3 oz copper for a

1N5802CB to 1N5806CB or 1N5802CB(US) to 1N5806CB(US). For axial-leaded, the lead length for mounting will

be .187 inch (4.76 mm) or less from body to entry point on PCB surface.

a. Use the I_Oversus Po curve on figure 11 to look up 1 amp (X-axis) and follow up to the T_J= 175ºC curve

(lower) for 0.78 watts.

b. Calculate maximum thermal resistance needed (175ºC – 55ºC) / 0.78 W = 154ºC/W.

c. Look up thermal resistance of 154ºC/W on Y-axis using a thermal resistance versus pad area plot on one of

the three curves on figure 12 for different weights of copper cladding and then intersect curve horizontally to

get answer. These curves assume still air, horizontal position.

d. In this example, the answer is: 1 oz PCB = .013 in²(0.3302 mm²), 2 oz PCB = .008 in²(0.2032 mm²), 3 oz

PCB = .0053 in²(0.13462 mm²) for each pad.

e. Add a conservative guard-band to the pad size (larger) to keep T_Jbelow 175ºC.

22

MIL-PRF-19500/742A

6.4.4 Square-wave application with 1N5802CB(US) to 1N5806CB(US). For a PCB mounting example with FR4

material to support a 0.5 amp I_Osquare wave switching at a 0.50 duty factor (50 percent duty cycle) at T_J= 125ºC

and ambient temperature of 55ºC, the following steps guide the user in what the PCB pad size will need to be with 1

oz, 2 oz, and 3 oz copper.

a. Find size of copper pads on standard FR4 PCB to support operation at 0.5 amp I_Osquare wave switching at a

0.50 duty factor (50 percent duty cycle) at T_J= 125ºC with T_A= 55ºC.

b. Calculate peak I_F= 0.5A / 0.50 duty factor = 1 amp.

c. Use the V_Fversus I_Fcurve on figure 13 to look up I_F= 1 A (Y-axis) and follow across to the T_J= 125ºC curve

(middle) for V_F= 0.70 V.

d. Calculate power = I_F* V_F* duty factor = 2 * 0.70 * 0.50 = 0.70 W.

e. Calculate maximum thermal resistance needed (125ºC – 55ºC) / 0.70 W = 100ºC/W.

f. Look up thermal resistance of 100ºC/W on the Y-axis using a thermal resistance versus pad area plot on one of

the three curves on figure 12 for different weights of copper cladding and then intersect curve horizontally to get

answer. Curves assume still air, horizontal position.

g. In this example, the answer is: 1 oz PCB = .084 in²(2.1336 mm²), 2 oz PCB = .051 in²(1.2954 mm²), 3 oz PCB

= .034 in²(0.8636 mm²) for each pad.

h. A conservative pad guard-band is optional since T_Jis only 125ºC. NOTE: Multilayer PCBs, forced air cooling,

will improve performance. Closed confinement of the PCB will do the opposite. Use sound thermal

management.

23

MIL-PRF-19500/742A

Average Sine Current (Io) vs Total Power (Po)

1N5811CB ss742

5

4.5

4

3.5

3

2.5

2

1.5

1

Po (W) for: Model @ Tj=25C

Po (W) for: Model @ Tj=90C

Po (W) for: Model @ Tj=125C

Po (W) for: Model @ Tj=175C

0.5

0

0.00

1.00

2.00

3.00

4.00

5.00

6.00

Io (A)

FIGURE 8. Rectifier power versus I_O(average forward current) for 1N5807CB(US) to 1N5811CB(US).

24

MIL-PRF-19500/742A

B-Pkg/E-Pkg MELF/Axial Thermal Resistance vs FR4 Pad Area

Still Air, PCB Horizontal

1000

100

10

1oz Foil

2oz Foil

3oz Foil

0.001

0.01

0.1

1

10

100

Pad Area per Pad (in2)

FIGURE 9. Thermal resistance versus pad area still air, PCB horizonal (for each pad) with 1, 2, and 3 oz copper for

1N5807CB(US) to 1N5811CB(US).

25

MIL-PRF-19500/742A

Nominal Vf vs If at Temperature

1N5811CB ss742

0.30

10

0.40

0.50

0.60

0.70

0.80

0.90

1.00

1

Model @ Tj=25C

Model @ Tj=90C

Model @ Tj=125C

Model @ Tj=175C

0.1

Vf (V)

FIGURE 10. Forward voltage versus forward current for 1N5807CB(US) to 1N5811CB(US).

26

MIL-PRF-19500/742A

Average Sine Current (Io) vs Total Power (Po)

1N5806 ss477

3.5

3

2.5

2

1.5

1

Po (W) for: Model @ Tj=25C

Po (W) for: Model @ Tj=90C

Po (W) for: Model @ Tj=125C

Po (W) for: Model @ Tj=175C

0.5

0

0.00

0.50

1.00

1.50

2.00

2.50

3.00

Io (A)

FIGURE 11. Rectifier power versus I_O(average forward current) for 1N5802CB(US) to 1N5806CB(US).

27

MIL-PRF-19500/742A

A-Pkg MELF/Axial Thermal Resistance vs FR4 Pad Area

Still Air, PCB Horizontal

1000

100

10

1oz Foil

2oz Foil

3oz Foil

0.001

0.01

0.1

1

10

100

Pad Area (in2)

FIGURE 12. Thermal resistance versus pad area still air, PCB horizontal (for each pad) with 1, 2, and 3 oz copper

for 1N5802CB(US) to 1N5806CB(US).

28

MIL-PRF-19500/742A

Nominal Vf vs If at Temperature

1N5806 ss477

0.20

10

0.30

0.40

0.50

0.60

0.70

0.80

0.90

1.00

1.10

1.20

1

0.1

Model @ Tj=25C

Model @ Tj=90C

Model @ Tj=125C

Model @ Tj=175C

0.01

0.001

Vf (V)

FIGURE 13. Forward voltage versus forward current for 1N5802CB(US) to 1N5806CB(US).

29

MIL-PRF-19500/742A

6.5 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where

changes from the previous issue were made. This was done as a convenience only and the Government assumes

no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the

requirements of this document based on the entire content irrespective of the marginal notations and relationship to

the last previous issue.

Custodians:

Army - CR

Navy - EC

Air Force - 85

NASA - NA

DLA - CC

Preparing activity:

DLA - CC

(Project 5961-2008-091)

Review activities:

Army - AR, AV, MI, SM

Navy - AS, MC

Air Force - 19, 71, 99

NOTE: The activities listed above were interested in this document as of the date of this document. Since

organizations and responsibilities can change, you should verify the currency of the information above using the

ASSIST Online database at http://assist.daps.dla.mil.

30


型号：	JANTX1N5811CBUS
厂家：	Microsemi
描述：	Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, HERMETIC SEALED, GLASS, D-5B, 2 PIN 超快恢复二极管快速恢复二极管
文件：	总30页 (文件大小：374K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

JANTX1N5811CBUS [MICROSEMI]

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