JANTX2N3637UB [MICROSEMI]
Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3;
| 型号： | JANTX2N3637UB |
| 厂家： | 
Microsemi |
| 描述： | Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3 CD 开关 晶体管 |
| 文件： | 总5页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/357
DEVICES
LEVELS
JAN
2N3634
2N3635
2N3636
2N3637
2N3634L
2N3634UB
2N3635L
2N3635UB
2N3636L
2N3636UB
2N3637L
2N3637UB
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
2N3634* 2N3636*
2N3635* 2N3637*
Parameters / Test Conditions
Collector-Emitter Voltage
Symbol
VCEO
VCBO
VEBO
IC
Unit
Vdc
Vdc
Vdc
Adc
140
140
5.0
1.0
175
175
5.0
1.0
Collector-Base Voltage
Emitter-Base Voltage
TO-5*
Collector Current
2N3634L, 2N3635L
2N3636L, 2N3637L
Total Power Dissipation
@ TA = +25°C
@ TC = +25°C
@ TC = +25°C
1.0
5.0
1.5
W
W
W
PT **
UB:
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
°C
* Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding
devices.
** Consult 19500/357 for De-Rating curves.
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Symbol
Min.
Max.
Unit
TO-39* (TO-205AD)
2N3634, 2N3635
2N3636, 2N3637
Collector-Emitter Breakdown Voltage
IC = 10mAdc
V(BR)CEO
Vdc
2N3634, 2N3635
2N3636, 2N3637
140
175
Collector-Base Cutoff Current
VCB = 100Vdc
ηAdc
μAdc
μAdc
100
10
10
ICBO
V
V
CB = 140Vdc
CB = 175Vdc
2N3634, 2N3635
2N3636, 2N3637
3 PIN
2N3634UB, 2N3635UB
2N3636UB, 2N3637UB
Emitter-Base Cutoff Current
EB = 3.0Vdc
VEB = 5.0Vdc
V
50
10
ηAdc
μAdc
IEBO
Collector-Emitter cutoff Current
ICEO
10
μAdc
V
CE = 100Vdc
T4-LDS-0156 Rev. 2 (101452)
Page 1 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
ON CHARACTERISTICS (1)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 0.1mAdc, VCE = 10Vdc
IC = 1.0mAdc, VCE = 10Vdc
IC = 10mAdc, VCE = 10Vdc
IC = 50mAdc, VCE = 10Vdc
IC = 150mAdc, VCE = 10Vdc
2N3634, 2N3636
2N3635, 2N3637
25
45
50
50
30
150
300
hFE
IC = 0.1mAdc, VCE = 10Vdc
IC = 1.0mAdc, VCE = 10Vdc
IC = 10mAdc, VCE = 10Vdc
IC = 50mAdc, VCE = 10Vdc
IC = 150mAdc, VCE = 10Vdc
55
90
100
100
60
Collector-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
IC = 50mAdc, IB = 5.0mAdc
0.3
0.6
VCE(sat)
Vdc
Vdc
Base-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
IC = 50mAdc, IB = 5.0mAdc
0.8
0.9
VBE(sat)
0.65
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Forward Current Transfer Ratio
IC = 30mAdc, VCE = 30Vdc, f = 100MHz
2N3634, 2N3636
2N3635, 2N3637
1.5
2.0
8.0
8.5
|hfe|
Forward Current Transfer Ratio
IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz
2N3634, 2N3636
2N3635, 2N3637
40
80
160
320
hfe
Small-Signal Short-Circuit Input Impedance
IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz
2N3634, 2N3636
2N3635, 2N3637
100
200
600
1200
hie
hoe
Ω
μs
pF
Small-Signal Open-Circuit Input Impedance
IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz
200
10
Output Capacitance
VCB = 20Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz
Cobo
Input Capacitance
Cibo
75
pF
VEB = 1.0Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0MHz
Noise Figure
f = 100Hz
f = 1.0kHz
f = 10kHz
5.0
3.0
3.0
VCE = 10Vdc, IC = 0.5mAdc, Rg = 1.0kΩ
NF
dB
(1) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%
T4-LDS-0156 Rev. 2 (101452)
Page 2 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
SAFE OPERATING AREA
DC Tests
TC = 25°C, 1 Cycle, t = 1.0s
Test 1
VCE = 100Vdc, IC = 30mAdc
2N3634, 2N3635
2N3636, 2N3637
V
CE = 130Vdc, IC = 20mAdc
Test 2
VCE = 50Vdc, IC = 95mAdc
Test 3
VCE = 5.0Vdc, IC = 1.0Adc
T4-LDS-0156 Rev. 2 (101452)
Page 3 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Dimensions
Millimeters
Ltr
Inches
Notes
Min
.305
.240
.335
Max
Min
Max
8.51
6.60
9.40
CD
CH
HD
LC
.335
.260
.370
7.75
6.10
8.51
.200 TYP
5.08 TYP
7
6
LD
LL
LU
L1
L2
P
.016
.016
.021
0.41
0.53
See notes 7, 9, and 10
.019
050
0.41
0.48
1.27
7
7
7
5
.250
.100
6.35
2.54
Q
r
TL
TW
α
.050
.010
.045
.034
1.27
0.254
1.14
8
4
3
6
.029
.028
0.74
0.71
0.86
45° TP
45° TP
Term 1
Term 2
Term 3
Emitter
Base
Collector
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r maximum, TW must be held to a minimum length of .021 inch (0.53 mm).
4. TL measured from maximum HD.
5. CD shall not vary more than ±.010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 inch (0.18 mm) radius of
true position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The device may be measured by
direct methods or by gauge and gauging procedure.
7. LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
8. r (radius) applies to both inside corners of tab.
9. For transistor types 2N3634 through 2N3637, LL is .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm)
maximum (TO-39).
10. For transistor types 2N3634L through 2N3637L, LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm)
maximum (TO-5).
11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1: Physical dimensions (TO-5 and TO-39)
T4-LDS-0156 Rev. 2 (101452)
Page 4 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
NOTES:
Dimensions
1. Dimensions are in inches.
Ltr
Inches
Millimeters
Min
1.17
2.92
2.16
Notes
2. Millimeters are given for general information only.
3. Hatched areas on package denote metallized areas.
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 =
Shielding connected to the lid.
5. In accordance with ASME Y14.5M, diameters are.
equivalent to φx symbology
Min
.046
.115
.085
Max
.056
.128
.108
.128
.108
.038
.035
.040
.079
.024
.008
.012
.022
Max
1.42
3.25
2.74
3.25
2.74
0.96
0.89
1.02
2.01
0.61
.203
.305
.559
BH
BL
BW
CL
CW
LL1
LL2
LS1
LS2
LW
r
.022
.017
.036
.071
.016
0.56
0.43
0.91
1.81
0.41
r1
r2
FIGURE 2: Physical dimensions, surface mount 2N3634UB through 2N3637UB (UB version).
T4-LDS-0156 Rev. 2 (101452)
Page 5 of 5
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