JANTX2N3735L [ETC]
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-5VAR ; 晶体管| BJT | NPN | 50V V（ BR ） CEO | 1.5AI （ C） | TO- 5VAR\n
| 型号： | JANTX2N3735L |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-5VAR
|
| 文件： | 总20页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 6 June 2002.
MIL-PRF-19500/395G
6 March 2002
SUPERSEDING
MIL-PRF-19500/395F
26 February 2001
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING
TYPES 2N3735, 2N3735L, 2N3737 AND 2N3737UB, JAN, JANTX, JANTXV, JANS AND JANHC, JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, switching transistors. Four
levels of product assurance are provided for each device type as specified in MIL-PRF-19500 and two levels of
product assurance are provided for unencapsulated devices .
1.2 Physical dimensions. See figure 1 (TO-39, TO-5 and TO-46), figure 2 (2N3737UB) and figure 3 (JANHC and
JANKC).
1.3 Maximum ratings.
Type
PT
TA = +25°C
W
1.0 (1)
0.5 (3)
0.5 (5)
PT
TC =+25°C
W
VCBO VCEO
VEBO
IC
Rq
Rq
TJ and
TSTG
JC
JA
V dc
75
V dc
40
V dc
5
5
A dc
1.5
1.5
°C/mW
.060
.088
-
°C/W
175
350
325
°C
2N3735
2N3737
2N3737UB
2.9 (2)
1.9 (4)
-
-65 to +200
-65 to +200
-65 to +200
75
40
75
40
5
1.5
(1) Derate linearly at 5.71 mW/°C above TA = +25°C.
(2) Derate linearly at 16.6 mW/°C above TC = +25°C.
(3) Derate linearly at 2.86 mW/°C above TA = +25°C.
(4) Derate linearly at 11.3 mW/°C above TC = +25°C.
(5) Derate linearly at 3.07 mW/°C above TA = +37.5°C.
1.4 Primary electrical characteristics.
hFE3 (1)
|hfe|
VCE(sat)
Cobo
Pulse response
VCE = 1.0 V dc
IC = 0.5 A dc
VCE = 10 V dc
IC = 50 mA dc
f = 100 MHz
IC = 500 mA dc
IB = 50 mA dc
VCB = 10 V dc
Limits
IE = 0
100 kHz £ f £ 1 MHz
pF
td
ns
tr
toff
ns
V dc
0.5
ns
40
Min
Max
40
140
2.5
6.0
9
8.0
60
(1) Pulsed (see 4.5.1)
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,
P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/395G
FIGURE 1. Physical dimensions TO-39, TO-5, TO-46.
2
MIL-PRF-19500/395G
2N3735 DIMENSIONS, TO-39
Dimensions
Symbol
Inches
Millimeters
Notes
Min
Max
.355
.260
.370
Min
Max
9.02
6.60
9.40
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
.305
.240
.355
7.75
6.10
9.02
.200 TP
5.08 TP
6
7
7
7
7
7
.016
.500
.016
.021
.750
.019
.050
0.41
12.70
0.41
0.53
19.05
0.48
1.27
.250
.100
.029
.028
6.35
2.54
0.74
0.71
TL
TW
Q
.045
.034
.040
.010
1.14
0.86
1.02
0.25
3
9
4
r
10
6
a
45°TP
45°TP
2N3735L DIMENSIONS, TO-5
Dimensions
Symbol
Inches
Millimeters
Notes
Min
Max
.355
.260
.370
Min
7.75
6.10
9.02
Max
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
.305
.240
.355
9.02
6.60
9.40
.200 TP
5.08 TP
6
7
7
7
7
.016
.021
0.41
0.53
1.500 1.750 38.10 44.45
.016
.019
.050
6.35
0.41
0.48
1.27
.250
.100
.029
.028
7
2.54
0.74
0.71
TL
TW
Q
.045
.034
.040
.010
1.14
0.86
1.02
0.25
3
9
4
r
10
6
a
45°TP
45°TP
FIGURE 1. Physical dimensions (TO-39, TO-5, TO-46) – Continued.
3
MIL-PRF-19500/395G
2N3737 DIMENSIONS, TO-46
Dimensions
Symbol
Inches
Millimeters
Notes
Min
Max
.195
.085
.230
Min
4.52
1.65
5.31
Max
CD
CH
HD
LC
LD
LL
LU
L1
L2
TL
TW
Q
.178
.065
.209
4.95
2.16
5.84
.100 TP
2.54 TP
6
7
.016
.500
.016
.021
0.41
0.53
1.750 12.70 19.05
7
.019
.050
0.41
0.48
1.27
7
7
.250
.028
.036
6.35
0.71
0.91
7
.048
.046
.040
.007
1.22
1.17
1.02
.018
3
9
4
r
10
6
a
45°TP
45°TP
NOTES:
1. Dimensions are in inches. Lead 1 is emitter, lead 2 is base, and lead 3 is collector.
2. Metric equivalents are given for general information only.
3. Symbol TL is measured from HD maximum.
4. Details of outline in this zone are optional.
5. Symbol CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for
automatic handling.
6. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating
plane shall be within .007 inch (0.18 mm) radius of TP relative to tab. Device may be measured by
direct methods or by gauge.
7. Symbol LU applies between L and L . Dimension LD applies between L and LL minimum.
1
2
2
8. Lead number three is electrically connected to case.
9. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
10. Symbol r applied to both inside corners of tab.
11. In accordance with ANSI Y14.5 M, diameters are equivalent to f X symbology.
12. P dimension not applicable for the TO-46 case.
FIGURE 1. Physical dimensions (TO-39, TO-5, TO-46) – Continued.
4
MIL-PRF-19500/395G
UB
Dimensions
Millimeters
Symbol
Inches
Note
Min
Max
.056
.035
.024
.024
.024
.108
.079
.039
.108
.128
.128
.038
.038
Min
0.97
0.43
0.41
0.41
0.41
2.41
1.81
0.89
2.41
2.82
Max
1.42
0.89
0.61
0.61
0.61
2.74
2.01
0.99
2.74
3.25
3.25
0.96
0.96
A
.046
.017
.016
.016
.016
.085
.071
.035
.085
.115
A1
B1
B2
B3
D
D1
D2
D3
E
E3
L1
L2
.022
.022
0.56
0.56
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
FIGURE 2. Physical dimensions, surface mount (UB version).
5
MIL-PRF-19500/395G
B
E
Die size:
Die thickness:
Base pad:
Emitter pad:
Back metal:
Top metal:
Back side:
Glassivation:
.027 x .027 inch (0.6858 x 0.6858 mm).
.008 ±.0016 inch (0.2032 ±0.04064 mm).
.0045 x .0045 inch (0.1145 x 0.1145 mm).
.004 x .005 inch (0.1016 x 0.1270 mm).
Gold, 6500 ± 1950 Ang.
Aluminum, 24500 ± 2500 Ang.
Collector.
SiO2, 7500 ± 1500 Ang.
FIGURE 3. JANHC and JANKC (A-version) die dimensions.
6
MIL-PRF-19500/395G
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500,
and on figure 1 (TO-39, TO-5 and TO-46) herein.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
7
MIL-PRF-19500/395G
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4 and table I.
3.6 Electrical test requirements. The electrical test requirements shall be group A as specified herein.
3.7 Marking. Marking shall be in accordance with MIL-PRF-19500, except for the UB suffix package. Marking on
the UB package shall consist of an abbreviated part number, the date code, and the manufacturers symbol or logo.
The prefixes JAN, JANTX, JANTXV, and JANS can be abbreviated as J, JX, JV, and JS respectively. The "2N" prefix
and the "UB" suffix can also be omitted.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4 and tables I, II, and III).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
*4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500.
*4.3 Screening (JANTX, JANTXV and JANS levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table IV
of MIL-PRF-19500)
Measurement
JANS level
JANTX and JANTXV levels
3c
Thermal impedance, method 3131 of
MIL-STD-750.
Thermal impedance, method 3131 of
MIL-STD-750.
9
Not applicable
ICBO2 and hFE3
ICBO2 and hFE3
11
ICBO2; hFE3; DICBO2 = 100 percent or 25 nA
dc, whichever is greater; DhFE3 = ±15
percent of initial value.
12
13
See 4.3.1
See 4.3.1
Subgroups 2 and 3 of table I herein;
DICBO2 = 100 percent or 25 nA dc,
whichever is greater;
Subgroup 2 of table I herein; DICBO2 = 100
percent or 25 nA dc, whichever is greater;
DhFE3 = ±15 percent of initial value.
DhFE3 = ±15 percent of initial value.
8
MIL-PRF-19500/395G
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: Adjust the power dissipated to achieve
TJ = 135°C minimum. The minimum power dissipated shall be 75 percent of the maximum rated as defined in 1.3.
VCB = 10 - 30 V dc. NOTE: No heat sink or forced air cooling on the devices shall be permitted.
4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows
JANS requirements; the JANHC follows JANTX requirements.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. Electrical measurements (end-
points) and delta requirements shall be in accordance with group A, subgroup 2 and table III herein; delta
requirements only apply to subgroups B4 and B5. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing.
Electrical measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after each step
in 4.4.2.2 and shall be in accordance with group A, subgroup 2 and table III herein.
* 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
2037
Condition
B3
B4
B5
Test condition A.
VCB = 10 - 30 V dc.
1037
1027
(Note: If a failure occurs, resubmission shall be at the test conditions of
the original sample). VCB = 10 V dc; PD ³ 100 percent of maximum
rated PT (see 1.3).
Option 1: 96 hours minimum, sample size in accordance with table VIa
of MIL-PRF-19500, adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours., sample size = 45, c = 0; adjust TA or PD to
achieve TJ = +225°C minimum.
B6
3131
See 4.5.2.
9
MIL-PRF-19500/395G
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot
or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed
assembly lot shall be scrapped.
Step
1
Method Condition
1039
1039
1032
Steady-state life: Test condition B, 340 hours min., VCB = 10 - 30 V dc, power shall be
applied to achieve TJ = +150°C minimum using a minimum of PD = 75 percent of
maximum rated PT as defined in 1.3. n = 45 devices, c = 0.
2
3
The steady-state life test of step 1 shall be extended to 1,000 hrs for each die design.
Samples shall be selected from a wafer lot every twelve months of wafer production.
Group B step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0.
High temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a.
For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers
(or from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each
inspection lot. See MIL-PRF-19500.
b.
Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2,
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANJ,
JANTX, and JANTXV) may be pulled prior to the application of final lead finish.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and
JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in
accordance with group A, subgroup 2 and table III herein; delta requirements only apply to subgroup C6.
4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.
Subgroup Method
Condition
C2
C6
2036
1026
Test condition E (not applicable to 2N3737UB).
VCB = 10 - 30 V dc; 1,000 hours; power shall be applied to achieve TJ = +150°C
minimum, using a minimum of PD = 75 percent of maximum rated PT as defined in
1.3.
* 4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup Method
Condition
C2
C5
C6
2036
3131
Test condition E (not applicable to 2N3737UB).
See 4.5.2.
Not applicable.
10
MIL-PRF-19500/395G
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any
inspection lot containing the intended package type and lead finish procured to the same specification which is
submitted to and passes group A tests for conformance inspection. When the final lead finish is solder or any plating
prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of final lead
finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered
as complying with the requirements for that subgroup.
* 4.4.4 Group E inspection. Group E inspection shall be performed for qualification or requalification only. In case
qualification was awarded to a prior revision of the associated specification that did not request the performance of
table II tests, the tests specified in table II herein shall be performed to maintain qualification.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131
of MIL-STD-750. The following details shall apply:
a. Collector current magnitude during power application shall be 45 mA dc minimum for 2N3735 and 2N3735L
and 31 mA dc minimum for 2N3737.
b. Collector to emitter voltage magnitude shall be 20 V dc.
c. Reference temperature measuring point shall be the case.
d. Reference point temperature shall be 25°C.
e. Mounting arrangement shall be with heat sink to case.
f. Thermal resistance maximum limit of 60°C/W for 2N3735, 2N3735L, and 88°C/W for 2N3737 and
2N3737UB.
11
MIL-PRF-19500/395G
TABLE I. Group A inspection.
MIL-STD-750
Inspection 1/
Subgroup 1 2/
Symbol
Limit
Unit
Method
2071
Conditions
Min
Max
Visual and mechanical
examination 3/
n = 45 devices, c = 0
Solderability 3/ 4/
2026
1022
n = 15 leads, c = 0
Resistance to solvents
3/ 4/ 5/
n = 15 devices, c = 0
Temp cycling 3/ 4/
Hermetic seal 4/
1051
1071
Test condition C, 25 cycles.
n = 22 devices, c = 0
n = 22 devices, c = 0
Fine leak
Gross leak
Electrical measurements
4/
Group A, subgroup 2
Bond strength 3/ 4/
2037
Precondition
TA = +250°C at t = 24 hrs or
TA = +300°C at t = 2 hrs
n = 11 wires, c = 0
Subgroup 2
Breakdown voltage
collector to emitter
3011
3036
40
V dc
Bias condition D; IC = 10 mA dc,
pulsed (see 4.5.1)
V(BR)CEO
Collector to base cutoff
current
ICBO1
10
mA dc
Bias condition D; V(BR)CBO = 75 V
dc.
Emitter to base cutoff
current
3061
3036
3041
10
mA dc
nA dc
nA dc
IEBO1
ICBO2
ICEX1
Bias condition D; V(BR)EBO = 5 V dc.
Bias condition D; VCB = 30 V dc
Collector to base cutoff
current
250
200
Collector to emitter cutoff
current
Bias condition A; VCE = 30 V dc
VEB = 2.0 V dc
Emitter to base cutoff
current
3061
100
nA dc
Bias condition D; VEB = 4.0 V dc
IEBO2
See footnotes at end of table.
12
MIL-PRF-19500/395G
TABLE I. Group A inspection - Continued.
MIL-STD-750
Inspection 1/
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 2 - continued
Forward current transfer
ratio
3076
3076
3076
3076
3071
3071
3076
3071
35
40
40
20
VCE = 1.0 V dc; IC = 10 mA dc
hFE1
Forward current transfer
ratio
VCE = 1.0 V dc; IC = 150 mA dc,
pulsed (see 4.5.1)
hFE2
Forward current transfer
ratio
VCE = 1.0 V dc; IC = 500 mA dc,
pulsed (see 4.5.1)
140
80
hFE3
Forward current transfer
ratio
VCE = 1.5 V dc; IC = 1.0 A dc, pulsed
(see 4.5.1)
hFE4
Collector to emitter
voltage (saturated)
IC = 10 mA dc, IB = 1.0 mA dc
0.2
0.3
V dc
V dc
V dc
V dc
VCE(sat)1
Collector to emitter
voltage (saturated)
IC = 150 mA dc, IB = 15 mA dc,
pulsed (see 4.5.1)
VCE(sat)2
"
Forward current transfer
ratio
VCE = 5.0 V dc; IC = 1.5 A dc, pulsed
(see 4.5.1)
20
hFE5
Collector to emitter
voltage (saturated)
0.5
IC = 500 mA dc, IB = 50 mA dc,
pulsed (see 4.5.1)
VCE(sat)3
3071
3066
3066
3066
3066
IC = 1.0 A dc, IB = 100 mA dc,
pulsed (see 4.5.1)
0.9
0.8
1.0
1.2
1.4
V dc
V dc
V dc
V dc
V dc
Collector to emitter
voltage (saturated)
VCE(sat)4
VBE(sat)1
VBE(sat)2
VBE(sat)3
VBE(sat)4
Base to emitter saturated
voltage
Test condition A, IC = 10 mA dc, IB =
1.0 mA dc
Base to emitter saturated
voltage
Test condition A, IC = 150 mA dc,
IB = 15 mA dc, pulsed (see 4.5.1)
Base to emitter saturated
voltage
Test condition A, IC = 500 mA dc,
IB = 50 mA dc, pulsed (see 4.5.1)
Base to emitter saturated
voltage
Test condition A, IC = 1.0 A dc,
IB = 100 mA dc, pulsed (see 4.5.1)
0.9
See footnotes at end of table.
13
MIL-PRF-19500/395G
TABLE I. Group A inspection - Continued.
MIL-STD-750
Inspection 1/
Symbol
Limit
Unit
Method
Conditions
Min
Max
250
Subgroup 3
High-temperature operation:
TA = +150°C
Collector to emitter cutoff
current
3041
3076
3306
Bias condition A;
VCE = 30 V dc, VEB = 2.0 V dc
mA dc
ICEX2
Low-temperature operation:
TA = -55°C
Forward current transfer
ratio
VCE = 1.0 V dc; IC = 500 mA dc,
pulsed (see 4.5.1)
hFE6
15
Subgroup 4
Magnitude of common -
emitter small-signal short-
circuit forward current
transfer ratio
2.5
6.0
VCE = 10 V dc; IC = 50 mA dc; f =
100 MHz
|hfe|
Open circuit output
capacitance
3236
3240
9.0
80
pF
pF
VCB = 10 V dc, IE = 0,
100 kHz £ f £ 1 MHz
Cobo
Input capacitance (output
open - circuited)
VEB = 0.5 V dc, IC = 0,
100 kHz £ f £ 1 MHz
Cibo
Pulse response:
Delay response
3251
8.0
ns
Test condition A; VCC = 30 V dc,
VBE = 2 V dc, IC = 1.0 A dc,
IB1 = 100 mA dc, (see figure 4)
td
Rise time
3251
3251
Test condition A; VCC = 30 V dc,
VBE = 2 V dc, IC = 1.0 A dc,
IB1 = 100 mA dc, (see figure 4)
40
60
ns
ns
tr
Turn-off time
Test condition A; VCC = 30 V dc,
IC = 1.0 A dc, IB1 = -IB2 = 100 mA
dc, (see figure 5)
toff
Subgroups 5, 6 and 7
Not applicable
1/ For sampling plan, unless otherwise specified see MIL-PRF-19500.
2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in
group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon
submission.
3/ Separate samples may be used.
4/ Not required for JANS devices.
5/ Not required for laser marked devices.
14
MIL-PRF-19500/395G
TABLE II. Group E inspection (all quality levels) – for qualification only.
MIL-STD-750
*
Inspection
Qualification
Method
1051
Conditions
Subgroup 1
45 devices
c = 0
Temperature cycling
(air to air)
Test condition C, 500 cycles
Hermetic seal
Fine leak
Gross leak
1071
1037
Electrical measurements
Subgroup 2
See group A, subgroup 2 herein.
45 devices
c = 0
Intermittent life
VCB = 10 V dc, 6,000 cycles.
Electrical measurements
Subgroup 3
See group A, subgroup 2 herein.
Not applicable
Subgroup 4, 5, 6 and 7
Not applicable
Subgroup 8
45 devices
c = 0
Reverse stability
1033
Condition A for devices ³ 400 V
Condition B for devices < 400 V
15
MIL-PRF-19500/395G
TABLE III. Groups B and C delta measurements. 1/ 2/ 3/
Step
1.
Inspection
MIL-STD-750
Conditions
Symbol
Limits
Unit
Method
3036
Min
Max
Collector to base
cutoff current
Bias condition D,
VCB = 30 V dc
100 percent of initial value
or 25 nA dc whichever is
greater.
DICBO2
2.
3.
Forward-current
transfer ratio
3076
3071
± 25 percent change from
initial value.
VCE = 1 V dc, IC = 500 mA
dc, pulsed (see 4.5.1)
DhFE3
Collector to
emitter voltage
(saturated)
± 50 mV dc change from
previous measured value.
IC = 500 mA dc, IB = 50 mA
dc, pulsed (4.5.1 )
DVCE(SAT)3
1/ The delta measurements for table VIa (JANS) of MIL-PRF-19500 are as follows:
a. Subgroup 4, see table III herein, step 3.
b. Subgroup 5, see table III herein, step 3.
2/ The delta measurements for 4.4.2.2 (JAN, JANTX, JANTXV) are as follows: See table III herein, steps 1 and 2, all
subgroups.
3/ The delta measurements for table VII of MIL-PRF-19500 are as follows: Subgroup 6, see table III herein, steps 1
and 2 for (JANS).
16
MIL-PRF-19500/395G
NOTES:
1. The rise time (tr) of the applied pulse shall be £ 0.1 ns, duty cycle £ 2 percent, and the generator source
impedance shall be 50 W.
2. Sampling oscilloscope: Zin ³ 100 kW, Cin £ 12 pF, rise time £ 5 ns.
FIGURE 4. Test circuit and waveforms for measuring turn-on.
NOTES:
1. The rise time (tr) of the applied pulse shall be £ 0.1 ns, duty cycle £ 2 percent, and the generator source
impedance shall be 50 W.
2. Sampling oscilloscope: Zin ³ 100 kW, Cin £ 12 pF, rise time £ 5 ns.
FIGURE 5. Test circuit and waveforms for measuring turn-off.
17
MIL-PRF-19500/395G
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order
(see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact
the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are
maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or
within the Military Departments' System Command. Packaging data retrieval is available from the managing Military
Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible
packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents must specify the following:
a. Title, number, and date of this specification.
b. Issue of DODISS to be cited in the solicitation, and if required, the specific issue of individual documents
referenced (see 2.2.1).
c. The lead finish as specified (see 3.4.1).
d. Packaging requirements (see 5.1).
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,
at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such
products have actually been so listed by that date. The attention of the contractors is called to these requirements,
and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government
tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered
by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center,
Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000.
6.4 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter
version (example JANHCA2N3737) will be identified on the QPL.
Die ordering information
PIN
Manufacturer
34156
2N3737
JANHCA2N3737
JANKCA2N3737
6.5 Changes from previous issue. The margins of this specification are marked with an asterisk to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
18
MIL-PRF-19500/395G
Custodians:
Army - CR
Navy - EC
Air Force - 11
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
Review activities:
(Project 5961-2558)
Army - AR, AV, MI, SM
Navy - AS, MC
Air Force – 19, 71, 99
19
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced
document(s) or to amend contractual requirements.
1. DOCUMENT NUMBER
MIL-PRF-19500/395G
2. DOCUMENT DATE
6 March 2002
I RECOMMEND A CHANGE:
2. DOCUMENT TITLE
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING TYPES 2N3735, 2N3735L, 2N3737 AND 2N3737UB,
JAN, JANTX, JANTXV, JANS AND JANHC, JANKC
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
c. ADDRESS (Include Zip Code)
b. ORGANIZATION
d. TELEPHONE (Include Area Code)
7. DATE SUBMITTED
COMMERCIAL
DSN
FAX
EMAIL
8. PREPARING ACTIVITY
b. TELEPHONE
Commercial
614-692-0510
a. Point of Contact
Alan Barone
DSN
FAX
EMAIL
850-0510
614-692-6939
alan.barone@dscc.dla.mil
c. ADDRESS
Defense Supply Center Columbus,
ATTN: DSCC-VAC
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533
P.O. Box 3990
Fort Belvoir, VA 22060-6221
Columbus, OH 43216-5000
Telephone (703) 767-6888 DSN 427-6888
DD Form 1426, Feb 1999 (EG)
Previous editions are obsolete
WHS/DIOR, Feb 99
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