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JANTX2N3716 [MICROSEMI]

NPN HIGH POWER SILICON TRANSISTOR; NPN大功率硅晶体管
JANTX2N3716
型号： JANTX2N3716
厂家： Microsemi    Microsemi
描述：

NPN HIGH POWER SILICON TRANSISTOR
NPN大功率硅晶体管

晶体 晶体管 局域网 高功率电源
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TECHNICAL DATA  
NPN HIGH POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 408  
Devices  
Qualified Level  
JAN  
2N3715  
2N3716  
JANTX  
JANTXV  
MAXIMUM RATINGS  
Symbol 2N3715  
Units  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Ratings  
2N3716  
80  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
60  
VCEO  
VCBO  
VEBO  
IB  
80  
100  
7.0  
4.0  
10  
Collector Current  
IC  
Total Power Dissipation  
@ TA = 250C  
@ TC =1000C  
5.0  
85.7  
W
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Thermal Resistance, Junction-to-Case  
Symbol  
Max.  
1.17  
Unit  
TO-3* (TO-204AA)  
0C/W  
R
qJC  
1) Derate linearly 28.57 mW/0C for TA >250C  
2) Derate linearly 0.857 W/0C for TC >1000C  
*See Appendix A for  
Package Outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Current  
IC = 10 mAdc  
Symbol  
Min.  
Max.  
Unit  
Vdc  
60  
80  
2N3715  
2N3716  
V(BR)  
CEO  
Collector-Base Cutoff Current  
VCB = 80 Vdc  
VCB = 100 Vdc  
10  
10  
mAdc  
2N3715  
2N3716  
ICBO  
Emitter-Base Breakdown Voltage  
VEB = 7.0 Vdc  
1.0  
mAdc  
mAdc  
IEBO  
ICEX  
Collector-Emitter Cutoff Current  
VBE = 1.5 Vdc, VCE = 60 Vdc  
VBE = 1.5 Vdc, VCE = 80 Vdc  
1.0  
1.0  
2N3715  
2N3716  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  
2N3715, 2N3716 JAN SERIES  
ELECTRICAL CHARACTERISTICS (con’t)  
Characteristics  
Collector-Emitter Cutoff Current  
Symbol  
Min.  
Max.  
Unit  
1.0  
1.0  
mAdc  
VCE = 60 Vdc  
VCE = 80 Vdc  
2N3715  
2N3716  
ICES  
ON CHARACTERISTICS (3)  
Forward-Current Transfer Ratio  
IC = 1.0 Adc, VCE = 2.0 Vdc  
IC = 3.0 Adc, VCE = 2.0 Vdc  
IC = 5.0 Adc, VCE = 2.0 Vdc  
IC = 10 Adc, VCE = 4.0 Vdc  
Collector-Emitter Saturation Voltage  
IC = 5.0 Adc, IB = 0.5 Adc  
50  
30  
10  
5.0  
150  
120  
hFE  
1.0  
2.5  
Vdc  
Vdc  
VCE(sat)  
IC = 10 Adc, IB = 2.0 Adc  
Base-Emitter Saturation Voltage  
IC = 5.0 Adc, IB = 0.5 Adc  
1.5  
3.0  
VBE(sat)  
IC = 10 Adc, IB = 2.0 Adc  
DYNAMIC CHARACTERISTICS  
Magnitude of Common Emitter Small-Signal Short Circuit  
Forward Current Transfer Ratio  
IC = 0.5 Adc, VCE = 10 Vdc, f = 100 kHz – 1.0 MHz  
Forward Current Transfer Ratio  
IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz  
Output Capacitance  
VCB = 10 Vdc, IE = 0, f = 1.0 MHz  
4.0  
30  
20  
½hfe½  
300  
500  
hfe  
pF  
Cobo  
SAFE OPERATING AREA  
DC Tests  
TC = +250C, 1 Cycle, t ³ 1.0 s  
Test 1  
VCE = 15 Vdc, IC = 10 Adc  
Test 2  
VCE = 40 Vdc, IC = 3.75 Adc  
Test 3  
VCE = 55 Vdc, IC = 0.9 Adc  
VCE = 65 Vdc, IC = 0.9 Adc  
2N3715  
2N3716  
(3) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 2 of 2  

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