JANTX2N3741 [MICROSEMI]
PNP POWER SILICON TRANSISTOR; PNP功率硅晶体管
| 型号： | JANTX2N3741 |
| 厂家： | 
Microsemi |
| 描述： | PNP POWER SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 441
Devices
Qualified Level
JAN
2N3740
2N3741
JANTX
JANTXV
MAXIMUM RATINGS
Symbol
2N3741
80
Ratings
2N3740
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
60
VCEO
VCBO
VEBO
IB
60
80
7.0
2.0
4.0
Collector Current
IC
Total Power Dissipation
@ TC = +250C (1)
@ TC = +1000C
25
14
W
W
0C
PT
Operating & Storage Junction Temperature Range
-65 to +200
TJ, T
stg
TO-66 (TO-213AA)
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
0C/W
Thermal Resistance, Junction-to-Case
1) Derate linearly @143 mW/0C for TC > +250C
7.0
R
qJC
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
Symbol
Min.
Max.
Unit
Vdc
60
80
2N3740
2N3741
V(BR)
CEO
Collector-Emitter Cutoff Current
VCE = 40 Vdc
VCE = 60 Vdc
Collector-Emitter Cutoff Current
VCE = 60 Vdc, VBE = 1.5 Vdc
VCE = 80 Vdc, VBE = 1.5 Vdc
Collector-Base Cutoff Current
VCB = 60 Vdc
10
10
mAdc
hAdc
hAdc
2N3740
2N3741
ICEO
ICEX
ICBO
IEBO
300
300
2N3740
2N3741
100
100
2N3740
2N3741
VCB = 80 Vdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
100
hAdc
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N3740, 2N3741 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (2)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 100 mAdc, VCE = 1.0 Vdc
IC = 250 mAdc, VCE = 1.0 Vdc
IC = 500 mAdc, VCE = 1.0 Vdc
IC = 1.0 Adc, VCE = 1.0 Vdc
IC = 4.0 Adc, VCE = 5.0 Vdc
Collector-Emitter Saturation Voltage
IC = 250 mAdc, IB = 25 mAdc
IC = 1.0 Adc, IB = 125 mAdc
Base-Emitter Voltage
40
30
20
10
3.0
hFE
120
0.4
0.6
Vdc
Vdc
VCE(sat)
VBE(on)
½hfe½
1.0
IC = 250 mAdc, VCE = 1.0 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 100 mAdc, VCE = 10 Vdc, f = 5.0 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 50 mAdc, VCE = 10 Vdc, f = 1.0 kHz
Output Capacitance
1.0
25
12
250
100
hfe
pF
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
Cobo
SWITCHING CHARACTERISTICS
Turn-On Time
ton
400
1.0
ms
ms
VCC = 30 Vdc; IC = 1.0 Adc; IB = 0.1 Adc
Turn-Off Time
VCC = 30 Vdc; IC = 1.0 Adc; IB = IB = 0.1 Adc
toff
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 6.25 Vdc, IC = 4.0 Adc
Test 2
VCE = 20 Vdc, IC = 1.25 Adc
Test 3
VCE = 50 Vdc, IC = 150 mAdc
VCE = 65 Vdc, IC = 150 mAdc
2N3740
2N3741
(2) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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