JANTXV2N5154L [MICROSEMI]
NPN POWER SILICON TRANSISTOR; NPN功率硅晶体管
| 型号： | JANTXV2N5154L |
| 厂家： | 
Microsemi |
| 描述： | NPN POWER SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 544
Devices
Qualified Level
JAN
JANTX
JANTXV
2N5152
2N5152L
2N5154
2N5154L
MAXIMUM RATINGS
Ratings
Symbol
VCEO
All Units
80
Units
Vdc
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
100
Vdc
VCBO
5.5
Vdc
VEBO
(3, 4)
TO- 5*
2N5152L, 2N5154L
2.0
Adc
IC
Total Power Dissipation
@ TA = +250C(1)
@ TC = +250C(2)
1.0
11.8
W
W
PT
Tj, T
Operating & Storage Temperature Range
-65 to +200
°C
stg
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 5.7 mW/0C for TA > +250C
2) Derate linearly 66.7 mW/0C for TC > +250C
3) Derate linearly 80 mW/0C for TC > +250C
4) This value applies for PW £ 8.3 ms, duty cycle £ 1%
Symbol
Max.
15
Unit
0C/W
R
qJC
2N5152, 2N5154
TO-39*
(TO-205AD)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc, IB = 0
Emitter-Base Cutoff Current
VEB = 4.0 Vdc, IC = 0
Symbol
V(BR)CEO
IEBO
Min.
Max.
Unit
80
Vdc
1.0
1.0
mAdc
mAdc
VEB = 5.5 Vdc, IC = 0
Collector-Emitter Cutoff Current
VCE = 60 Vdc, VBE = 0
VCE = 100 Vdc, VBE = 0
1.0
1.0
mAdc
mAdc
ICES
Collector-Base Cutoff Current
VCE = 40 Vdc, IB = 0
50
ICEO
mAdc
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N5152, 2N5154 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS
Forward Current Transfer Ratio
IC = 50 mAdc, VCE = 5 Vdc
Symbol
Min.
Max.
Unit
20
50
2N5152
2N5154
IC = 2.5 Adc, VCE = 5 Vdc
IC = 5 Adc, VCE = 5 Vdc
30
70
90
200
hFE
2N5152
2N5154
20
40
2N5152
2N5154
Collector-Emitter Saturation Voltage
VCE = 5 Vdc, IC = 2.5 Adc
IC = 5 Adc, IB = 500 Adc
Base-Emitter Voltage non-saturated
IC = 2.5 Adc, IB = 250 mAdc
IC = 5 Adc, IB = 500 mAdc
Base-Emitter Saturation Voltage
IC = 2.5 Adc, IB = 250 mAdc
IC = 5 Adc, IB = 500 mAdc
0.75
1.5
VCE(sat)
Vdc
Vdc
Vdc
1.45
VBE
1.45
2.2
VBE(sat)
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal
Short Circuit Forward-Current Transfer Ratio
IC = 500 mAdc, VCE = 5 Vdc, f = 10 MHz
2N5152
6
7
½hfe½
2N5154
Small-Signal Short Circuit Forward-Current
Transfer Ratio
IC = 100 mAdc, VCE = 5 Vdc, f = 1 kHz
2N5152
20
50
hfe
2N5154
Output Capacitance
VCB = 10 Vdc, IE = 0, f = 1.0 MHz
250
pF
Cobo
SWITCHING CHARACTERISTICS
Turn-On Time
IC = 5 Adc, IB1= 500 mAdc
Turn-Off Time
ton
ms
ms
0.5
1.5
toff
RL = 6W
ts
tf
1.4
0.5
ms
ms
Storage Time
Fall Time
IB2= -500 mAdc
V BE(OFF) = 3.7 Vdc
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t p= 1.0 s
Test 1
VCE = 5.8Vdc, IC = 2.0 Adc
Test 2
VCE = 32 Vdc, IC = 340 mAdc
Test 3
VCE = 80 Vdc, IC = 20 mAdc
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 2 of 2
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