JANTXV2N6211 [MICROSEMI]
PNP HIGH POWER SILICON TRANSISTOR; PNP大功率硅晶体管
| 型号： | JANTXV2N6211 |
| 厂家： | 
Microsemi |
| 描述： | PNP HIGH POWER SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
PNP HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 461
Devices
Qualified Level
JAN
2N6211
2N6212
2N6213
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N6211 2N6212 2N6213 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
225
300
350
6.0
1.0
2.0
350
Vdc
Vdc
Vdc
Adc
Adc
VCEO
VCBO
VEBO
IB
275
400
Collector Current
IC
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
3.0
35
W
W
0C
PT
Operating & Storage Temperature
-55 to +200
TO-66*
Top, T
stg
(TO-213AA)
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
0C/W
Thermal Resistance Junction-to-Case
5.0
R
qJC
1) Derate linearly 17.1 mW/0C for TA > +250C
2) Derate linearly 200 mW/0C for TC > +250C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, f = 30-60 Hz
Symbol
Min.
Max.
Unit
Vdc
Vdc
Vdc
225
300
350
2N6211
2N6212
2N6213
V(BR)
CEO
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, f = 30-60 Hz, RBE = 50 W
250
325
375
2N6211
2N6212
2N6213
V(BR)
CER
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, f = 30-60 Hz, RBE = 50 W, VBE = -1.5 Vdc
V(BR)
CEX
275
350
400
2N6211
2N6212
2N6213
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N6211, 2N6212, 2N6213 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Collector-Emitter Cutoff Current
Symbol
Min.
Max.
Unit
5.0
mAdc
ICEO
VCE = 150 Vdc
Collector-Emitter Cutoff Current
VCE = 250 Vdc, VBE = 1.5 Vdc
VCE = 315 Vdc, VBE = 1.5 Vdc
VCE = 360 Vdc, VBE = 1.5 Vdc
Collector-Base Cutoff Current
VCB = 275 Vdc
VCB = 350 Vdc
VCB = 400 Vdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
2N6211
2N6212
2N6213
0.5
0.5
0.5
ICEX
mAdc
mAdc
mAdc
2N6211
2N6212
2N6213
15
15
15
ICBO
0.5
IEBO
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 2.8 Vdc
IC = 1.0 Adc, VCE = 3.2 Vdc
IC = 1.0 Adc, VCE = 4.0 Vdc
IC = 1.0 Adc, VCE = 5.0 Vdc
2N6211
2N6212
2N6213
2N6211
2N6212
2N6213
10
10
10
30
30
30
100
100
100
175
175
150
hFE
Collector-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.125 Adc
1.4
1.6
2.0
2N6211
2N6212
2N6213
Vdc
Vdc
VCE(sat)
Base-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.125 Adc
1.4
VBE(sat)
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
4.0
20
½hfe½
IC = 0.2 Adc, VCE = 10 Vdc, f = 5.0 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
220
pF
Cobo
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 200 ± 10 Vdc; IC = 1.0 Adc; IB1 = -0.125 Adc
Turn-Off Time
ton
ms
ms
0.6
3.1
toff
VCC = 200 ± 10 Vdc; IC = 1.0 Adc; IB1 = -0.125 Adc, IB2 = 0.125Adc
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 17.5 Vdc, IC = 2.0 Adc
Test 2
VCE = 40 Vdc, IC = 0.875 Adc
Test 3
VCE = 225 Vdc, IC = 0.034 Adc
Test 4
VCE = 300 Vdc, IC = 0.02 Adc
Test 5
VCE = 350 Vdc, IC = 0.015 Adc
All Types
All Types
2N6211
2N6212
2N6213
(3) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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