首页 |元器件品牌

MQUMAF5819 [MICROSEMI]

Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, PLASTIC PACKAGE-2;
MQUMAF5819
型号： MQUMAF5819
厂家： Microsemi    Microsemi
描述：

Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, PLASTIC PACKAGE-2

瞄准线 光电二极管
文件： 总3页 (文件大小：306K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
UMAF5817, UMAF5818, and UMAF5819  
ULTRAMITE™ SURFACE MOUNT  
SCHOTTKY BARRIER RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
ENVIRONMENTALLY LEAD-FREE  
DESCRIPTION  
APPEARANCE  
The UMAF5817 thru UMAF5819 UltraMite™ series offers a Lead-Free  
construction (both internally and externally) in a small efficient surface  
mount package with the same electrical features as the popular 1N5817,  
1N5818, and 1N5819 Schottky rectifiers. It provides the same size footprint  
as other small surface mount DO-214AC or BA package options except  
with a much lower profile height. Its configuration in a “2010 MELF” style  
robust package design prevents lead damage to terminals and also  
minimizes parasitics by eliminating internal wire bonds and providing very  
short internal conduction paths.  
UltraMite™  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
Plastic package has Underwriters Laboratory  
•
•
For surface mount applications  
Flammability classification 94V-0  
For use in low-voltage high-frequency switching  
power supplies, inverters, free wheeling, and  
polarity protection applications  
Low power loss, High efficiency  
Low inductive parasitics for minimal Ldi/dt effects  
•
•
•
•
•
•
Metal to silicon rectifier, majority carrier conduction  
High current capability, low VF  
Built-in stress relief with similar COE as PC boards  
Lead-Free construction externally and internally  
Optional Lead-Tin finish available (UMA5817-19)  
Options for screening in accordance with MIL-PRF-  
19500/586 for JAN, JANTX, JANTXV, and JANS  
are available by adding MQ, MX, MV, or MSP  
prefixes respectively to part numbers. For example,  
designate a MXUMAFJ5819 for a JANTX screen.  
•
•
•
Fits same small PCB footprints as popular  
“SMAJxxx” or “SMBJxxx” Schottky devices in  
JEDEC outlines DO-214AC (or BA) and DO-214AA  
respectively except with much lower height profile  
•
Robust 2010 MELF style package configuration for  
pick-and-place handling  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
FRP substrate material and epoxy under-fill  
•
•
•
Operating junction and storage temperature  
range (TJ and TSTG): -50 oC to +125oC  
package meeting UL94V-0  
Terminals Tin plated (solderable per MIL-STD-750,  
Method 2026)  
Body marked with F817, F818, or F819  
Cathode designated with band  
Weight: 0.020 grams  
Tape & Reel packaging per EIA-481-2 with 12 mm  
tape and 3000 units/reel (7 inch reel) or 10,000  
units/reel (13 inch reel)  
Forward average rectified current (IO)  
@TC=75oC: 1.0 Amp  
•
•
•
•
Forward surge current (IFSM) 8.3 ms single half-  
sine waveform superimposed on rated load  
(JEDEC Method): 25 Amps  
•
•
Typical thermal resistance (RθJL): 50 oC/W  
Typical junction capacitance (CJ) at 1.0 MHz  
and VR of 5.0 Volts: 65 pF for UMAF5817, and  
46 pF for UMAF5818 and UMAF5819  
•
See package dimensions on last page  
•
Solder temperatures: 260 ºC for 10 s (maximum)  
ELECTRICAL CHARACTERISTICS @ 25oC unless specified otherwise  
Working  
Maximum  
Maximum  
Maximum  
Maximum  
Maximum  
dc reverse  
current @  
VRWM  
Maximum dc  
Peak  
RMS  
Peak  
Forward  
Forward  
reverse  
Reverse  
Voltage  
VRWM  
Voltage;  
Repetitive  
Voltage;  
VRRM  
Voltage at 1.0A Voltage at 3.0A  
current @  
(note 1)  
VF  
(note 1)  
VF  
VRWM ,100oC  
Part  
VRMS  
Volts  
14  
IR  
IR  
mA  
10  
Number  
Volts  
Volts  
20  
Volts  
0.45  
Volts  
0.75  
mA  
UMAF5817 20  
UMAF5818 30  
UMAF5819 40  
0.5  
21  
30  
0.55  
0.875  
0.90  
0.5  
10  
28  
40  
0.60  
0.5  
10  
NOTES: (1) Pulse test with PW=300 µsec, 1% duty cycle.  
Microsemi  
Page 1  
Copyright 2002  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
9-16-03 REV A  
UMAF5817, UMAF5818, and UMAF5819  
ULTRAMITE™ SURFACE MOUNT  
SCHOTTKY BARRIER RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
ENVIRONMENTALLY LEAD-FREE  
GRAPHS  
UMAF5818  
UMAF5819  
UMAF5817  
TJ = 25ºC  
Microsemi  
Page 2  
Copyright 2002  
Scottsdale Division  
9-16-03 REV A  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
UMAF5817, UMAF5818, and UMAF5819  
ULTRAMITE™ SURFACE MOUNT  
SCHOTTKY BARRIER RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
ENVIRONMENTALLY LEAD-FREE  
UMAF5817  
UMAF5818  
UMAF5819  
PACKAGE DIMENSIONS & PAD LAYOUT  
PAD LAYOUT  
INCHES  
MM  
DIM  
A
MIN  
MAX  
.181  
.091  
.049  
.049  
.002  
.020  
MIN  
4.60  
2.30  
1.25  
1.25  
.05  
.173  
.083  
.033  
.033  
.002  
.020  
4.40  
2.10  
.85  
B
C
D
.85  
E
.05  
F
.50  
.50  
INCHES  
.245  
mm  
6.22  
1.90  
2.62  
A
B
C
.075  
.103  
Microsemi  
Page 3  
Copyright 2002  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
9-16-03 REV A  

相关型号：

MQUPR10E3

 Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE-2
MICROSEMI

MQUPR15

 Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, DO-216AA, PLASTIC, DO-216, POWERMITE-2
MICROSEMI

MQUPR15E3

 Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE-2
MICROSEMI

MQUPR5

 Rectifier Diode, 1 Phase, 1 Element, 2.5A, 50V V(RRM), Silicon, DO-216AA, PLASTIC, DO-216, POWERMITE-2
MICROSEMI

MQUPR5E3

 Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE-2
MICROSEMI

MQUPS1040CTE3

 Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 40V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, POWERMITE3, 2 PIN
MICROSEMI

MQUPS120E3

 Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE, 2 PIN
MICROSEMI

MQUPS120EE3

 Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE-1
MICROSEMI

MQUPS140E3

 Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, DO-216, POWERMITE, 2 PIN
MICROSEMI

MQUPS160E3

 Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, DO-216, POWERMITE-1
MICROSEMI

MQUPS3100E3

 Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, POWERMITE 3, 2 PIN
MICROSEMI

MQUPS340E3

 Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, POWERMITE 3, 2 PIN
MICROSEMI
©2020 ICPDF网 联系我们和版权申明