MSD160-16 [MICROSEMI]
Bridge Rectifier Diode, 3 Phase, 1600V V(RRM), Silicon, CASE M2, 5 PIN;
| 型号： | MSD160-16 |
| 厂家： | 
Microsemi |
| 描述： | Bridge Rectifier Diode, 3 Phase, 1600V V(RRM), Silicon, CASE M2, 5 PIN 局域网 二极管 |
| 文件： | 总3页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSD160
Glass Passivated Three
Phase Rectifier Bridge
VRRM 800 to 1800V
ID
160 Amp
Applications
y
y
y
y
Three phase rectifiers for power supplies
Rectifiers for DC motor field supplies
Battery charger rectifiers
Input rectifiers for variable frequency drives
Circuit
+
Features
~
MSD
y
y
y
Three phase bridge rectifier
~
~
Blocking voltage: 800 to 1800V
Heat transfer through aluminum oxide DCB
ceramic isolated metal baseplate
Glass passivated chip
-
y
Module Type
TYPE
VRRM
800V
1200V
1600V
1800V
VRSM
900V
1300V
1700V
1900V
MSD160 – 08
MSD160 – 12
MSD160 – 16
MSD160 – 18
Maximum Ratings
Symbol
ID
Conditions
Tc=100℃
Values
160
Units
A
1800
A
IFSM
t=10mS Tvj =45℃
t=10mS Tvj =45℃
i2t
A2s
V
16200
3000
a.c.50Hz;r.m.s.;1min
Visol
Tvj
Tstg
Mt
-40 to 150
-40 to 125
5±15%
5±15%
230
℃
℃
To terminals(M6)
To heatsink(M6)
Module
Nm
Ms
Nm
g
Weight
Thermal Characteristics
Symbol
Rth(j-c)
Conditions
Per diode
Values
0.65
Units
℃/W
Module
0.03
Rth(c-s)
℃/W
Electrical Characteristics
Symbol
Conditions
Values
Units
1.65
V
VFM
T=25℃ IFM =300A
Tvj =25℃ VRD=VRRM
≤0.5
≤6
mA
mA
IRD
Tvj =150℃ VRD=VRRM
MSD160-Rev 1
Dec, 2009
www.microsemi.com
1/4
MSD160
Performance Curves
400
A
450
W
300
200
Typ.
300
25℃
125℃
150
100
IF
Pvtot
0
0
0 ID 20
40 60 80 100 120 140 160 A
0
VF 0.5
1.0
1.5
2.0 V
Fig2. Power dissipation
Fig1. Forward Characteristics
1.0
3000
A
50Hz
℃/ W
2250
Zth(j-C)
0.5
1500
750
0
0
0.001
0.01
0.1
1
10
100 S
1
10
cycles 100
Fig4. Max Non-Repetitive Forward Surge
Current
Fig3. Transient thermal impedance
250
A
200
150
100
50
ID
0
0
Tc
50
100
150 °C
Fig5.Forward Current Derating Curve
MSD160-Rev 1
Dec, 2009
www.microsemi.com
2/4
MSD160
Package Outline Information
CASE-M3
Dimensions in mm
MSD160-Rev 1
Dec, 2009
www.microsemi.com
3/4
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