MSP1N6466US [MICROSEMI]

Trans Voltage Suppressor Diode, 500W, 30.5V V(RWM), Unidirectional, 1 Element, Silicon, HERMETICALLY SEALED, GLASS, D-5B, MELF-2;
MSP1N6466US
型号: MSP1N6466US
厂家: Microsemi    Microsemi
描述:

Trans Voltage Suppressor Diode, 500W, 30.5V V(RWM), Unidirectional, 1 Element, Silicon, HERMETICALLY SEALED, GLASS, D-5B, MELF-2

局域网 二极管
文件: 总3页 (文件大小:145K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1N6461US thru 1N6468US  
Voidless-Hermetically-Sealed Surface  
Mount Unidirectional Transient  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This surface mount series of industry recognized voidless-hermetically-sealed  
Unidirectional Transient Voltage Suppressor (TVS) designs is military qualified to MIL-  
PRF-19500/551 and are ideal for high-reliability applications where a failure cannot be  
tolerated. They provide a Working Peak “Standoff” Voltage selection from 5.0 to 51.6  
Volts with 500 W ratings. They are very robust in hard-glass construction and also use  
an internal metallurgical bond identified as Category I for high reliability applications.  
The 500 W series is military qualified to MIL-PRF-19500/551. These devices are also  
available in axial-leaded packages for thru-hole mounting by deleting the “US” suffix  
(see separate data sheet for 1N6461 thru 1N6468). Microsemi also offers numerous  
other TVS products to meet higher and lower peak pulse power and voltage ratings in  
both through-hole and surface-mount packages.  
Package “E”  
(or “D-5B”)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
High surge current and peak pulse power provides  
transient voltage protection for sensitive circuits  
Military and other high reliability transient protection  
Extremely robust construction  
Triple-layer passivation  
Working Peak “Standoff” Voltage (VWM) from 5.0 to  
51.6 V  
Internal “Category I” metallurgical bonds  
Voidless hermetically sealed glass package  
Available as 500 W Peak Pulse Power (PPP)  
ESD and EFT protection per IEC61000-4-2 and  
IEC61000-4-4 respectively  
JAN/TX/TXV military qualifications available per MIL-  
PRF-19500/551 by adding JAN, JANTX, or JANTXV  
prefix  
Secondary lightning protection per select levels in  
IEC61000-4-5  
Further options for screening in accordance with MIL-  
PRF-19500 for JANS by using a “MSP” prefix, e.g.  
MSP6462, MSP6468, etc.  
Square-end-cap terminals for easy placement  
Nonsensitive to ESD per MIL-STD-750 Method  
1020  
Axial-leaded equivalents are also available in a  
square-end-cap MELF configuration (see separate  
data sheet for 1N6461 thru 1N6168)  
Inherently radiation hard as described in Microsemi  
MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
Operating & Storage Temperature: -55oC to +175oC  
CASE: Hermetically sealed voidless hard glass  
with Tungsten slugs  
Peak Pulse Power at 25oC: 500 Watts @ 10/1000 µs  
(also see Figures 1,2 and 4)  
TERMINATIONS: End caps are Copper with  
Tin/Lead (Sn/Pb) finish. Note; Previous inventory  
had solid silver end caps with Tin/Lead (Sn/Pb) finish.  
Impulse repetition rate (duty factor): 0.01%  
Forward Surge Current: 80 Amps@ 8.33 ms one-half  
sine wave  
MARKING: None  
POLARITY: Cathode band  
Tape & Reel option: Standard per EIA-481-B  
Weight: 539 mg  
Forward Voltage: 1.5 V @ 1 Amp dc and 4.8 V at 100  
Amps (pulsed)  
Steady-State Power: 2.5 Watts @ TA = 25oC (see  
note below and Figure 4)  
See package dimensions on last page  
Thermal Resistance Junction to End Cap: 20 oC/W  
Solder Temperatures: 260oC for 10 s (maximum)  
NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from  
mounting point to ambient is sufficiently controlled where TJ(MAX) is not exceeded.  
Copyright © 2007  
4-27-2007 REV B  
Microsemi  
Scottsdale Division  
Page 1  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1N6461US thru 1N6468US  
Voidless-Hermetically-Sealed Surface  
Mount Unidirectional Transient  
S C O T T S D A L E D I V I S I O N  
ELECTRICAL CHARACTERISTICS  
MAXIMUM  
CLAMPING  
VOLTAGE  
VC  
MAXIMUM  
PEAK PULSE  
CURRENT  
IPP  
BREAKDOWN  
CURRENT  
MAXIMUM  
TEMP.  
COEF. OF  
BREAK  
DOWN  
VOLTAGE  
V(BR)  
MIN.  
WORKING  
MAX  
LEAKAGE  
CURRENT  
ID  
PEAK  
VOLTAGE  
VWM  
I
TYPE  
(BR)  
@ 10/1000 µs  
V(BR)  
@8/20 µs  
@10/1000 µs  
Volts  
5.6  
6.5  
13.6  
16.4  
27.0  
33.0  
43.7  
54.0  
mAdc  
Vdc  
5
6
12  
15  
V(pk)  
9.0  
A(pk)  
315  
258  
125  
107  
69  
A(pk)  
56  
46  
22  
19  
12  
11  
8
%/oC  
-.03, +0.04  
0.06  
0.085  
0.085  
.096  
μAdc  
3000  
2500  
500  
500  
50  
3
2
2
1N6461US  
1N6462US  
1N6463US  
1N6464US  
1N6465US  
1N6466US  
1N6467US  
1N6468US  
25  
20  
5
5
2
1
1
1
11.0  
22.6  
26.5  
41.4  
47.5  
63.5  
78.5  
24  
30.5  
40.3  
51.6  
63  
45  
.098  
.101  
35  
6
.103  
SYMBOLS & DEFINITIONS  
Symbol  
Definition  
VBR  
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.  
Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range.  
This is also referred to as Standoff Voltage.  
VWM  
ID  
VC  
Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature.  
Maximum clamping voltage at specified IPP (Peak Pulse Current) at the specified pulse conditions.  
Peak Pulse Power: The peak power dissipation resulting from the peak impulse current IPP  
.
PPP  
GRAPHS  
FIGURE 1  
PEAK PULSE POWER vs. PULSE TIME  
FIGURE 2  
10/1000 µs CURRENT IMPULSE WAVEFORM  
Copyright © 2007  
4-27-2007 REV B  
Microsemi  
Page 2  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1N6461US thru 1N6468US  
Voidless-Hermetically-Sealed Surface  
Mount Unidirectional Transient  
S C O T T S D A L E D I V I S I O N  
FIGURE 3  
T – Temperature – oC  
8/20 µs CURRENT IMPULSE WAVEFORM  
(per MIL-PRF-19500/551  
FIGURE 4  
DERATING CURVE  
PACKAGE DIMENSIONS Inches [mm]  
E-MELF-PKG (D-5B)  
Note: If mounting requires adhesive separate from the solder,  
an additional 0.080 inch diameter contact may be placed in the  
center between the pads as an optional spot for cement as  
shown in the pad layout.  
Copyright © 2007  
4-27-2007 REV B  
Microsemi  
Scottsdale Division  
Page 3  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

相关型号:

MSP1N6468US

Trans Voltage Suppressor Diode, 500W, 51.6V V(RWM), Unidirectional, 1 Element, Silicon, HERMETICALLY SEALED, GLASS, D-5B, MELF-2
MICROSEMI

MSP1N6469US

Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, HERMETICALLY SEALED, GLASS, D-5C, MELF-2
MICROSEMI

MSP1N6471US

Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, HERMETICALLY SEALED, GLASS, D-5C, MELF-2
MICROSEMI

MSP1N6472US

Trans Voltage Suppressor Diode, 1500W, 15V V(RWM), Unidirectional, 1 Element, Silicon, HERMETICALLY SEALED, GLASS, D-5C, MELF-2
MICROSEMI

MSP1N6473US

Trans Voltage Suppressor Diode, 1500W, 24V V(RWM), Unidirectional, 1 Element, Silicon, HERMETICALLY SEALED, GLASS, D-5C, MELF-2
MICROSEMI

MSP1N6474US

Trans Voltage Suppressor Diode, 1500W, 30.5V V(RWM), Unidirectional, 1 Element, Silicon, HERMETICALLY SEALED, GLASS, D-5C, MELF-2
MICROSEMI

MSP1N6475US

Trans Voltage Suppressor Diode, 1500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon, HERMETICALLY SEALED, GLASS, D-5C, MELF-2
MICROSEMI

MSP1N6476US

Trans Voltage Suppressor Diode, 1500W, 51.6V V(RWM), Unidirectional, 1 Element, Silicon, HERMETICALLY SEALED, GLASS, D-5C, MELF-2
MICROSEMI

MSP1N6506

Trans Voltage Suppressor Diode, Unidirectional, 8 Element, Silicon, HERMETIC SEALED, CERAMIC, DIP-14
MICROSEMI

MSP1N6507

Trans Voltage Suppressor Diode, Unidirectional, 8 Element, Silicon, HERMETIC SEALED, CERAMIC, DIP-14
MICROSEMI

MSP1N6508

Trans Voltage Suppressor Diode, Unidirectional, 16 Element, Silicon, HERMETIC SEALED, CERAMIC, DIP-14
MICROSEMI

MSP1N6509

Trans Voltage Suppressor Diode, Unidirectional, 16 Element, Silicon, HERMETIC SEALED, CERAMIC, DIP-14
MICROSEMI