SP5610E3 [MICROSEMI]
Trans Voltage Suppressor Diode, 1500W, 30.5V V(RWM), Unidirectional, 1 Element, Silicon, HERMETICALLY SEALED, GLASS PACKAGE-2;
| 型号： | SP5610E3 |
| 厂家： | 
Microsemi |
| 描述： | Trans Voltage Suppressor Diode, 1500W, 30.5V V(RWM), Unidirectional, 1 Element, Silicon, HERMETICALLY SEALED, GLASS PACKAGE-2 局域网 二极管 |
| 文件： | 总3页 (文件大小：325K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5610 thru 1N5613
Voidless-Hermetically-Sealed Unidirectional
Transient Suppressors
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This series of industry recognized voidless-hermetically-sealed Unidirectional
Transient Voltage Suppressor (TVS) designs is military qualified to MIL-PRF-
19500/434 and are ideal for high-reliability applications where a failure cannot be
tolerated. They provide a Working Peak “Standoff” Voltage selection from 30.5 to 175
Volts with 1500 W ratings. They are very robust in hard-glass construction and also
use an internal metallurgical bond identified as Category I for high reliability
applications. The 1500 W series is military qualified to MIL-PRF-19500/434. These
devices are also available in a surface mount MELF package configuration as a
special order. Microsemi also offers numerous other TVS products to meet higher and
lower peak pulse power and voltage ratings in both through-hole and surface-mount
packages.
“G” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
High surge current and peak pulse power provides
•
•
•
Military and other high reliability transient protection
Extremely robust construction
transient voltage protection for sensitive circuits
•
•
•
•
Triple-layer passivation
Internal “Category I” metallurgical bonds
Voidless hermetically sealed glass package
JAN/TX/TXV military qualifications available per MIL-
PRF-19500/434 by adding JAN, JANTX, or JANTXV
prefix
Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “SP” prefix, e.g.
SP5610, SP5611, etc.
Working Peak “Standoff” Voltage (VWM) from 30.5
to 175 V
•
•
Available as 1500 W Peak Pulse Power (PPP)
ESD and EFT protection per IEC61000-4-2 and
IEC61000-4-4 respectively
•
Secondary lightning protection per select levels in
IEC61000-4-5
Flexible axial-leaded mounting terminals
•
•
•
•
Nonsensitive to ESD per MIL-STD-750 Method
Surface Mount equivalents are also available in a
square-end-cap MELF configuration with a “US” suffix
as a special order item.
1020
•
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
Operating & Storage Temperature: -55oC to +175oC
•
•
CASE: Hermetically sealed voidless hard glass
Peak Pulse Power at 25oC: 1500 Watts @ 10/1000 µs
(also see Figures 1,2 and 4)
with Tungsten slugs
TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)
over copper
MARKING: Body painted and part number, etc.
POLARITY: Cathode band
Tape & Reel option: Standard per EIA-296
Weight: 1270 mg
See package dimensions on last page
•
•
Impulse repetition rate (duty factor): 0.01%
Steady-State Power: 3.0 W @ TA = 25oC (see note
below and Figure 4)
•
•
•
•
•
•
Solder Temperatures: 260oC for 10 s (maximum)
NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where TJ(MAX) is not exceeded.
Copyright 2004
10-11-2004 REV A
Microsemi
Scottsdale Division
Page 1
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N5610 thru 1N5613
Voidless-Hermetically-Sealed Unidirectional
Transient Suppressors
S C O T T S D A L E D I V I S I O N
ELECTRICAL CHARACTERISTICS
MAXIMUM
CLAMPING
VOLTAGE
VC
MAXIMUM
PEAK PULSE
CURRENT
IPP
BREAKDOWN
MAXIMUM
TEMP.
BREAK
DOWN
VOLTAGE
V(BR)
MIN.
WORKING
MAX
LEAKAGE
CURRENT
ID
CURRENT
PEAK
VOLTAGE
VWM
I
TYPE
COEF. OF
V(BR)
(BR)
@ 10/1000 µs
@8/20 µs
@10/1000 µs
Volts
mAdc
Vdc
30.5
40.3
49.0
175
V(pk)
47.6
63.5
78.5
265
A(pk)
193
136
116
33
A(pk)
32
%/oC
.093
.094
.096
.100
µAdc
1N5610
1N5611
1N5612
1N5613
33.0
1
1
1
1
5
5
5
5
43.7
24
54.0
19
191
5.7
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range.
This is also referred to as Standoff Voltage.
VWM
ID
Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature.
Maximum clamping voltage at specified IPP (Peak Pulse Current) at the specified pulse conditions.
VC
Peak Pulse Power: The peak power dissipation resulting from the peak impulse current IPP
.
PPP
GRAPHS
Peak Value
IPP
Pulse time duration (tp) is
defined as that point where
I
P decays to 50% of peak
value (IPP).
FIG. 1 – Non-repetitive peak pulse power rating curve
NOTE: Peak power defined as peak voltage times peak current
FIG. 2 Pulse wave form for exponential surge
for 10/1000 µs
time (t) in milliseconds
Copyright 2004
10-11-2004 REV A
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N5610 thru 1N5613
Voidless-Hermetically-Sealed Unidirectional
Transient Suppressors
S C O T T S D A L E D I V I S I O N
FIGURE 3
T – Temperature – oC
8/20 µs CURRENT IMPULSE WAVEFORM
FIGURE 4
DERATING CURVE
PACKAGE DIMENSIONS Inches [mm]
PACKAGE G
Note: Package G lead dimension diameter is 0.040 inch nominal with –.003 +.002 inch tolerance
Copyright 2004
10-11-2004 REV A
Microsemi
Scottsdale Division
Page 3
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相关型号：
SP5611E3
Trans Voltage Suppressor Diode, 1500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon, HERMETICALLY SEALED, GLASS PACKAGE-2
MICROSEMI
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