WMS512K8-17CIA
更新时间:2024-10-29 17:45:11
品牌:MICROSEMI
描述:Standard SRAM, 512KX8, 17ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
WMS512K8-17CIA 概述
Standard SRAM, 512KX8, 17ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 SRAM
WMS512K8-17CIA 规格参数
是否Rohs认证: | 不符合 | 生命周期: | Transferred |
零件包装代码: | DIP | 包装说明: | 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 |
针数: | 32 | Reach Compliance Code: | unknown |
ECCN代码: | 3A991.B.2.A | HTS代码: | 8542.32.00.41 |
风险等级: | 5.04 | Is Samacsys: | N |
最长访问时间: | 17 ns | 其他特性: | LG-MAX |
JESD-30 代码: | R-CDIP-T32 | 长度: | 42.2 mm |
内存密度: | 4194304 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 32 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 512KX8 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | DIP | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
座面最大高度: | 5.13 mm | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | THROUGH-HOLE |
端子节距: | 2.5 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 15.24 mm |
Base Number Matches: | 1 |
WMS512K8-17CIA 数据手册
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PDF下载WMS512K8-XXX
512Kx8 MONOLITHIC SRAM, SMD 5962-95613
FEATURES
Access Times 15, 17, 20, 25, 35, 45, 55ns
• 32 pin, Rectangular Ceramic Leadless Chip Carrier
(Package 601)
MIL-STD-883 Compliant Devices Available
• Commercial, Industrial and Military Temperature Range
• 5V Power Supply
Revolutionary, Center Power/Ground Pinout JEDEC
Approved
• 36 lead Ceramic SOJ (Package 100)
• Low Power CMOS
• 36 lead Ceramic Flat Pack (Package 226)
• Low Power Data Retention for Battery Back-up Operation
• TTL Compatible Inputs and Outputs
Evolutionary, Corner Power/Ground Pinout JEDEC
Approved
• 32 pin Ceramic DIP (Package 300)
*This product is subject to change without notice.
• 32 lead Ceramic SOJ (Package 101)
• 32 lead Ceramic Thinpack™ Flat Pack (Package 321)
REVOLUTIONARY PINOUT
EVOLUTIONARY PINOUT
32 DIP
36 FLAT PACK
36 CSOJ
32 CSOJ (DE)
32 CLCC
32 FLAT PACK (FF)
TOP VIEW
TOP VIEW
TOP VIEW
A0
A1
A2
A3
A4
CS#
I/O0
I/O1
VCC
VSS
I/O2
I/O3
WE#
A5
1
2
3
4
5
6
7
8
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
NC
32 VCC
A18
A16
A14
A12
A7
1
31 A15
30 A17
29 WE#
28 A13
27 A8
A18
A17
A16
A15
OE#
I/O7
I/O6
VSS
VCC
I/O5
I/O4
A14
A13
A12
A11
A10
NC
2
4
3 2 1 32 31 30
3
5
6
7
8
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
WE#
A13
A8
4
5
A6
6
26 A9
7
A5
A9
25 A11
24 OE#
23 A10
22 CS#
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
8
A4
9
A11
OE#
A10
CS#
I/O7
9
A3
10
11
12
13
9
10
11
12
13
14
15
16
A2
10
11
12
13
14
15
16
17
18
A1
A0
I/O0
I/O1
I/O2
VSS
14 15 16 17 18 19 20
A6
A7
A8
A9
PIN DESCRIPTION
A0-18
I/O 0-7
CS#
Address Inputs
Data Input/Output
Chip Select
OE#
Output Enable
Write Enable
+5.0V Power
Ground
WE#
VCC
GND
Microsemi Corporation reserves the right to change products or specifications without notice.
April 2012 © 2012 Microsemi Corporation. All rights reserved.
Rev. 13
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
www.whiteedc.com
WMS512K8-XXX
Absolute Maximum Ratings
Truth Table
Parameter
Symbol
TA
Min
-55
-65
-0.5
Max
+125
+150
VCC+0.5
150
Unit
°C
°C
V
CS#
H
OE#
X
WE#
X
MODE
Standby
Read
DATA I/O
High Z
POWER
Standby
Active
Operating Temperature
Storage Temperature Range
Signal Voltage Range to GND
Junction Temperature
Supply Voltage Range (VCC)
TSTG
VG
L
L
H
Data Out
Data In
High Z
L
X
L
Write
Active
TJ
°C
V
L
H
H
Out Disable
Acvive
VCC
-0.5
7.0
Recommended Operating Conditions
Parameter
Symbol
VCC
VIH
Min
4.5
Max
5.5
Unit
V
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil)
2.2
VCC + 0.3
+0.8
V
VIL
-0.3
-55
V
TA
+125
°C
Capacitance
(TA = +25°C)
Parameter
Symbol
Conditions
Package
Speed (ns)
15 to 55
15 to 55
15 to 35
45 to 55
15 to 55
15 to 35
45 to 55
Max
20
15
12
20
20
12
20
Unit
pF
pF
pF
pF
pF
pF
pF
32 pin CSOJ, DIP, Flat Pack Evolutionary
32 pin CLCC
Input capacitance
CIN
VIN = 0 V, f = 1.0 MHz
36 pin CSOJ & Flat Pack Revolutionary
32 pin CSOJ, DIP, Flat Pack Revolutionary
36 pin CSOJ & Flat Pack Revolutionary
Output capacitance
COUT
VOUT = 0 V, f = 1.0 MHz
This parameter is guaranteed by design but not tested.
DC Characteristics – CMOS Compatible
(VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ 125°C)
Parameter
Symbol
Conditions
Min
Max
10
Unit
μA
μA
mA
mA
V
Input Leakage Current
Output Leakage Current
Operating Supply Current*
Standby Current
ILI
ILO
ICC
ISS
VOL
VCC = 5.5, VIN = GND to VCC
CS# = VIH, OE# = VIH, VOUT = GND TO VCC
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5,
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5
10
160
0.45
0.4
Output Low Voltage
IOL = 6mA for 17 - 35ns,
IOL = 2.1mA for 45 - 55ns, VCC = 4.5
Output High Voltage
VOH
IOH = -4.0mA for 17 - 35ns,
2.4
V
I
OH = 1.0mA for 45 - 55ns, VCC = 4.5
Data retention characteristics for low power “l” version
Parameter
Symbol
VDR
Conditions
CS#3 VCC -0.2V
VCC = 3V
Min
2.0
Max
5.5
7
Unit
V
Data Retention Supply Voltage
Low Power Data Retention
Low Power Data Retention
ICCDR1
ICCDR2
mA
mA
VCC = 2V
2
Microsemi Corporation reserves the right to change products or specifications without notice.
April 2012 © 2012 Microsemi Corporation. All rights reserved.
Rev. 13
2
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
www.whiteedc.com
WMS512K8-XXX
AC Characteristics
(VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ 125°C)
-15
-17
-20
-25
-35
-45
-55
Parameter
Symbol
Unit
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
15
0
17
0
20
0
25
0
35
0
45
0
55
0
Read Cycle Time
tRC
tAA
ns
ns
ns
ns
ns
ns
ns
ns
ns
15
17
20
25
35
45
55
Address Access Time
Output Hold from Address Change
Chip Select Access Time
tOH
15
8
17
9
20
10
25
12
35
25
45
25
55
25
tACS
tOE
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
2
0
2
0
2
0
2
0
4
0
4
0
4
0
tCLZ1
tOLZ1
tCHZ1
tOHZ1
8
8
9
9
10
10
12
12
15
15
20
20
20
20
AC Characteristics
(VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ 125°C)
-17 -20 -25
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
-15
-35
-45
-55
Parameter
Symbol
Unit
Write Cycle Time
tWC
tCW
tAW
15
13
13
8
17
14
14
9
20
14
14
10
14
2
25
15
15
10
15
2
35
25
25
20
25
2
45
35
35
25
35
2
55
50
50
25
40
2
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
tDW
tWP
tAS
13
2
14
2
Address Setup Time
Address Hold Time
tAH
0
0
0
0
0
5
5
Output Active from End of Write
Write Enable to Output in High Z
Data Hold Time
tOW1
tWHZ1
tDH
2
2
3
4
4
5
5
8
9
9
10
15
20
25
0
0
0
0
0
0
0
1. This parameter is guaranteed by design but not tested.
AC Test Circuit
AC Test Conditions
Parameter
Typ
Unit
V
Input Pulse Levels
Input Rise and Fall
V
IL = 0, VIH = 3.0
5
ns
V
IOL
Input and Output Reference Level
Output Timing Reference Level
NOTES:
1.5
1.5
Current Source
V
V
I
Z is programmable from -2V to +7V.
OL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 .
Z is typically the midpoint of VOH and VOL
OL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
VZ ≈ 1.5V
D.U.T.
(Bipolar Supply)
V
I
.
Ceff = 50 pF
IOH
Current Source
Microsemi Corporation reserves the right to change products or specifications without notice.
April 2012 © 2012 Microsemi Corporation. All rights reserved.
Rev. 13
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
www.whiteedc.com
WMS512K8-XXX
TIMING WAVEFORM – READ CYCLE
tRC
ADDRESS
CS#
tAA
tRC
ADDRESS
DATA I/O
tAA
tACS
tCLZ
tCHZ
tOH
OE#
PREVIOUS DATA VALID
DATA VALID
tOE
tOLZ
tOHZ
READ CYCLE 1 (CS# = OE# = VIL, WE# = VIH)
DATA I/O
DATA VALID
HIGH IMPEDANCE
READ CYCLE 2 (WE# = VIH)
WRITE CYCLE – WE# CONTROLLED
tWC
ADDRESS
tAW
tAH
tCW
CS#
WE#
tAS
tWP
tOW
tDH
tDW
DATA VALID
tWHZ
DATA I/O
WRITE CYCLE 1, WE# CONTROLLED
WRITE CYCLE – CS# CONTROLLED
tWC
ADDRESS
tAW
tAS
tAH
tCW
CS#
tWP
WE#
tDW
tDH
DATA I/O
DATA VALID
WRITE CYCLE 2, CS# CONTROLLED
Microsemi Corporation reserves the right to change products or specifications without notice.
April 2012 © 2012 Microsemi Corporation. All rights reserved.
Rev. 13
4
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
www.whiteedc.com
WMS512K8-XXX
PACKAGE 100: 36 LEAD, CERAMIC SOJ
4.7 (0.184) MAX
23.37 (0.920) ± ±0.25 (0.010)
0.89 (0.035)
Radius TYP
0.2 (0.008)
± ±0.05 (0.002)
11.23 (0.442)
± ±0.30 (0.012)
9.55 (0.376) ± ±0.25 (0.010)
1.27 (0.050) ± ±0.25 (0.010)
1.27 (0.050) TYP
21.6 (0.850) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 101: 32 LEAD, CERAMIC SOJ
21.1 (0.830) ± ±0.25 (0.010)
3.96 (0.156) MAX
0.89 (0.035)
Radius TYP
0.2 (0.008)
± ±0.05 (0.002)
11.23 (0.442)
± ±0.30 (0.012)
9.55 (0.376) ± ±0.25 (0.010)
1.27 (0.050) ± ±0.25 (0.010)
1.27 (0.050) TYP
19.1 (0.750) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Microsemi Corporation reserves the right to change products or specifications without notice.
April 2012 © 2012 Microsemi Corporation. All rights reserved.
Rev. 13
5
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
www.whiteedc.com
WMS512K8-XXX
PACKAGE 321: 32 PIN CERAMIC THINPACKTM FLATPACK
0.838
MAX
0.567
0.427
0.559
0.429
0.118
MAX
0.020
0.030
0.008
0.005
0.050
TYP
0.016 ± ±±0.008
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 226: 36 LEAD, CERAMIC FLAT PACK
23.37 (0.920)
± ±0.25 (0.010)
2.72 (0.107)
MAX
12.95 (0.510)
± ±0.13 (0.005)
12.7 (0.500)
± ±0.5 (0.020)
5.1 (0.200)
± ±0.25 (0.010)
1.27 (0.050) TYP
21.59 (0.850) TYP
0.43 (0.017)
0.127 (0.005)
± ±0.05 (0.002)
± ±0.05 (0.002)
3.8 (0.150)
TYP
32.64 (1.285) TYP
38.1 (1.50) ± ±0.4 (0.015)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Microsemi Corporation reserves the right to change products or specifications without notice.
April 2012 © 2012 Microsemi Corporation. All rights reserved.
Rev. 13
6
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
www.whiteedc.com
WMS512K8-XXX
PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
42.8 (1.686) MAX
5.13 (0.202) MAX
3.2 (0.125) MIN
0.25 (0.010)
± 0.05 (0.002)
0.99 (0.039)
± 0.51 (0.020)
15.25 (0.600)
± 0.25 (0.010)
2.5 (0.100)
TYP
1.27 (0.050)
± 0.1 (0.005)
0.46 (0.018)
± 0.05 (0.002)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Microsemi Corporation reserves the right to change products or specifications without notice.
April 2012 © 2012 Microsemi Corporation. All rights reserved.
Rev. 13
7
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
www.whiteedc.com
WMS512K8-XXX
PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
7.62 (0.300) TYP
3.81
(0.150) TYP
5.08
(0.200)
TYP
0.56 (0.022)
0.71 (0.028)
10.16
(0.400)
TYP
PIN 1
0.38 (0.015) x 45
PIN 1 IDENTIFIER
11.25 (0.443)
14.15 (0.557)
1.63 (0.064)
2.54 (0.100)
13.79 (0.543)
14.15 (0.557)
1.02 (0.040) x 45
3 PLACES
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Microsemi Corporation reserves the right to change products or specifications without notice.
April 2012 © 2012 Microsemi Corporation. All rights reserved.
Rev. 13
8
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
www.whiteedc.com
WMS512K8-XXX
ORDERING INFORMATION
W M S 512K 8 X - XXX X X X
MICROSEMI CORPORATION
MONOLITHIC
SRAM
ORGANIZATION, 512K x 8
IMPROVEMENT MARK:
Blank = Standard
L = Low Power Data Retention
ACCESS TIME (ns)
PACKAGE:
C = 32 pin Ceramic 0.600” DIP (Package 300)
CL = 32 pin Rectangular Ceramic Leadless Chip Carrier (Package 601)
DE = 32 Lead Ceramic SOJ (Package 101) Evolutionary
DJ = 36 Lead Ceramic SOJ (Package 100)
F = 36 Lead Ceramic Flat Pack (Package 226)
FF = 32 Lead Ceramic Thinpack™ Flat Pack (Package 321)
DEVICE GRADE:
Q = MIL-STD-883 Compliant
M = Military Screened -55°C ≤ TA ≤ 125°C
I = Industrial -40°C ≤ TA ≤85°C
C = Commercial 0°C ≤ TA ≤ 70°C
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
Microsemi Corporation reserves the right to change products or specifications without notice.
April 2012 © 2012 Microsemi Corporation. All rights reserved.
Rev. 13
9
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
www.whiteedc.com
WMS512K8-XXX
DEVICE TYPE
SPEED
55ns
PACKAGE
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
SMD NO.
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
5962-95613 05HYX
5962-95613 06HYX
5962-95613 07HYX
5962-95613 08HYX
5962-95613 09HYX
5962-95613 10HYX
5962-95613 14HYX
45ns
35ns
25ns
20ns
17ns
15ns
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
55ns
45ns
35ns
25ns
20ns
17ns
15ns
55ns
45ns
35ns
25ns
20ns
17ns
15ns
32 lead SOJ Evol (DE)
32 lead SOJ Evol (DE)
32 lead SOJ Evol (DE)
32 lead SOJ Evol (DE)
32 lead SOJ Evol (DE)
32 lead SOJ Evol (DE)
32 lead SOJ Evol (DE)
36 lead SOJ (DJ)
5962-95613 05HTX
5962-95613 06HTX
5962-95613 07HTX
5962-95613 08HTX
5962-95613 09HTX
5962-95613 10HTX
5962-95613 14HTX
5962-95613 05HZX
5962-95613 06HZX
5962-95613 07HZX
5962-95613 08HZX
5962-95613 09HZX
5962-95613 10HZX
5962-95613 14HZX
36 lead SOJ (DJ)
36 lead SOJ (DJ)
36 lead SOJ (DJ)
36 lead SOJ (DJ)
36 lead SOJ (DJ)
36 lead SOJ (DJ)
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
55ns
45ns
35ns
25ns
20ns
17ns
15ns
36 lead Flatpack (F)
36 lead Flatpack (F)
36 lead Flatpack (F)
36 lead Flatpack (F)
36 lead Flatpack (F)
36 lead Flatpack (F)
36 lead Flatpack (F)
5962-95613 05HXX
5962-95613 06HXX
5962-95613 07HXX
5962-95613 08HXX
5962-95613 09HXX
5962-95613 10HXX
5962-95613 14HXX
Microsemi Corporation reserves the right to change products or specifications without notice.
April 2012 © 2012 Microsemi Corporation. All rights reserved.
Rev. 13
10
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
www.whiteedc.com
WMS512K8-XXX
Document Title
512Kx8 MONOLITHIC SRAM, SMD 5962-95613
Revision History
Rev # History
Release Date Status
Rev 12
Changes (Pg. 1-11)
March 2011
Final
12.1 Change document layout from White Electronic Designs to Microsemi
12.2 Add document Revision History page
Rev 13
Changes (Pg 2)
April 2012
Final
13.1 Correct typo in Absolute Maximum Ratings – Signal Voltage Range to
Ground Max from VCC-0.5 to VCC+0.5
13.1 Correct typo in DC Characteristics – CMOS Compatible - Operating Supply
Current Conditions from CS# = VIH to CS# = VIL
Microsemi Corporation reserves the right to change products or specifications without notice.
April 2012 © 2012 Microsemi Corporation. All rights reserved.
Rev. 13
11
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
www.whiteedc.com
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WMS512K8-17CLC | MICROSEMI | Standard SRAM, 512KX8, 17ns, CMOS, CQCC32, BRAZED, CERAMIC, LCC-32 | 获取价格 | |
WMS512K8-17CLCA | MICROSEMI | Standard SRAM, 512KX8, 17ns, CMOS, CQCC32, BRAZED, CERAMIC, LCC-32 | 获取价格 | |
WMS512K8-17CLCA | WEDC | Standard SRAM, 512KX8, 17ns, CMOS, CQCC32, BRAZED, CERAMIC, LCC-32 | 获取价格 | |
WMS512K8-17CLI | WEDC | 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 | 获取价格 | |
WMS512K8-17CLI | MICROSEMI | Standard SRAM, 512KX8, 17ns, CMOS, CQCC32, BRAZED, CERAMIC, LCC-32 | 获取价格 | |
WMS512K8-17CLIA | MICROSEMI | Standard SRAM, 512KX8, 17ns, CMOS, CQCC32, BRAZED, CERAMIC, LCC-32 | 获取价格 | |
WMS512K8-17CLIA | WEDC | Standard SRAM, 512KX8, 17ns, CMOS, CQCC32, BRAZED, CERAMIC, LCC-32 | 获取价格 | |
WMS512K8-17CLM | WEDC | 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 | 获取价格 | |
WMS512K8-17CLM | MICROSEMI | Standard SRAM, 512KX8, 17ns, CMOS, CQCC32, BRAZED, CERAMIC, LCC-32 | 获取价格 |
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