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WS512K32NV-70G2TIA [MICROSEMI]

SRAM Module, 512KX32, 70ns, CMOS, CQFP68, QFP-68;
WS512K32NV-70G2TIA
型号： WS512K32NV-70G2TIA
厂家： Microsemi    Microsemi
描述：

SRAM Module, 512KX32, 70ns, CMOS, CQFP68, QFP-68

静态存储器
文件： 总9页 (文件大小：959K)
中文：  中文翻译
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WS512K32V-XXX  
*ADVANCED  
512Kx32 SRAM 3.3V MODULE  
FEATURES  
 Access Times of 70, 85, 100, 120ns  
 Low Voltage Operation:  
• 3.3V ± 10% Power Supply  
 Low Power CMOS  
 Packaging  
• 66-pin, PGA Type, 1.185 inch square, Hermetic Ceramic  
HIP (Package 401)  
 Built-in Decoupling Caps and Multiple Ground Pins for Low  
• 68 lead, Hermetic CQFP (G2T), 22.4mm (0.880 inch),  
4.57mm (0.180") high (Package 510). Designed to fit  
JEDEC 68 lead 0.990" CQFJ footprint  
Noise Operation  
 Weight  
• WS512K32V-XG2TX - 8 grams typical  
WS512K32V-XHX - 13 grams typical  
 Organized as 512Kx32; User Configurable as 1024Kx16 or  
2Mx8  
 Commercial, Industrial and Military Temperature Ranges  
 TTL Compatible Inputs and Outputs  
* This product is under development, is not qualified or characterized and is subject to change or  
cancellation without notice.  
Pin Description  
PIN CONFIGURATION FOR WS512K32NV-XHX  
Top View  
I/O0-31  
A0-18  
Data Inputs/Outputs  
Address Inputs  
Write Enables  
Chip Selects  
WE1-4  
#
1
12  
23  
34  
45  
56  
CS1-4  
OE#  
VCC  
#
I/O8  
I/O9  
I/O10  
A13  
WE2#  
CS2#  
GND  
I/O11  
A10  
I/O15  
I/O14  
I/O13  
I/O12  
OE#  
A18  
I/O24  
I/O25  
I/O26  
A6  
VCC  
CS4#  
WE4#  
I/O27  
A3  
I/O31  
I/O30  
I/O29  
I/O28  
A0  
Output Enable  
Power Supply  
Ground  
GND  
NC  
Not Connected  
A14  
A7  
A15  
A11  
NC  
A4  
A1  
Block Diagram  
A16  
A12  
WE1#  
I/O7  
A8  
A5  
A2  
WE  
1
#
CS  
1
#
WE  
2
#
CS  
2
#
WE  
3
#
CS  
3
#
4 4  
WE # CS #  
A17  
VCC  
A9  
WE3#  
CS3#  
GND  
I/O19  
I/O23  
I/O22  
I/O21  
I/O20  
OE#  
A0-18  
I/O0  
I/O1  
I/O2  
CS1#  
NC  
I/O6  
I/O16  
I/O17  
I/O18  
512K x 8  
512K x 8  
512K x 8  
512K x 8  
I/O5  
I/O3  
I/O4  
8
8
8
8
11  
22  
33  
44  
55  
66  
I/O0-7  
I/O8-15  
I/O16-23  
I/O24-31  
Microsemi Corporation reserves the right to change products or specifications without notice.  
May 2011 © 2011 Microsemi Corporation. All rights reserved.  
Rev. 3  
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  
WS512K32V-XXX  
ADVANCED  
FIGURE 2 – PIN CONFIGURATION FOR  
WS512K32V-XG2TX  
Pin Description  
I/O0-31  
A0-18  
Data Inputs/Outputs  
Address Inputs  
Write Enables  
Chip Selects  
Top View  
WE1-4  
#
CS1-4  
OE#  
VCC  
#
Output Enable  
Power Supply  
Ground  
9
8
7
6
5
4
3
2
1
68 67 66 65 64 63 62 61  
60 I/O16  
GND  
NC  
I/O0 10  
I/O1 11  
I/O2 12  
I/O3 13  
I/O4 14  
I/O5 15  
I/O6 16  
I/O7 17  
GND 18  
I/O8 19  
I/O9 20  
I/O10 21  
I/O11 22  
I/O12 23  
I/O13 24  
I/O14 25  
I/O15 26  
Not Connected  
59 I/O17  
58 I/O18  
57 I/O19  
56 I/O20  
55 I/O21  
54 I/O22  
53 I/O23  
52 GND  
51 I/O24  
50 I/O25  
49 I/O26  
48 I/O27  
47 I/O28  
46 I/O29  
45 I/O30  
44 I/O31  
Block Diagram  
WE1# CS1#  
WE2# CS2#  
WE3# CS3#  
WE4# CS4#  
OE#  
A0-18  
512K x 8  
512K x 8  
512K x 8  
512K x 8  
2728 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43  
8
8
8
8
I/O0-7  
I/O8-15  
I/O16-23  
I/O24-31  
0.940"  
TYP  
The WEDC 68 lead G2T CQFP fills the same fit and function as the  
JEDEC 68 lead CQFJ or 68 PLCC. But the G2T has the TCE and lead  
inspection advantage of the CQFP form.  
Microsemi Corporation reserves the right to change products or specifications without notice.  
May 2011 © 2011 Microsemi Corporation. All rights reserved.  
Rev. 3  
2
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  
WS512K32V-XXX  
ADVANCED  
ABSOLUTE MAXIMUM RATINGS  
TRUTH TABLE  
CS#  
H
L
L
L
OE#  
X
L
H
X
WE#  
X
H
H
L
Mode  
Standby  
Read  
Out Disable  
Write  
Data I/O  
High Z  
Data Out  
High Z  
Power  
Standby  
Active  
Active  
Active  
Parameter  
Symbol  
TA  
Min  
-55  
-65  
-0.5  
Max  
+125  
+150  
VCC +0.5  
150  
Unit  
°C  
°C  
V
Operating Temperature  
Storage Temperature  
Signal Voltage Relative to GND  
Junction Temperature  
Supply Voltage  
TSTG  
VG  
Data In  
TJ  
°C  
V
VCC  
-0.5  
4.6  
CAPACITANCE  
TA = +25°C  
RECOMMENDED OPERATING CONDITIONS  
Parameter  
Symbol  
COE  
CWE  
Conditions  
VIN = 0V, f = 1.0 MHz  
VIN = 0V, f = 1.0 MHz  
Max Unit  
Parameter  
Symbol  
VCC  
VIH  
Min  
3.0  
Max  
3.6  
Unit  
V
OE# capacitance  
WE1-4# capacitance  
HIP (PGA)  
50  
pF  
pF  
Supply Voltage  
Input High Voltage  
Input Low Voltage  
Operating Temperature (Mil)  
2.2  
VCC + 0.3  
+0.8  
V
20  
15  
20  
20  
50  
VIL  
-0.3  
-0.5  
V
CQFP G2U  
TA  
+125  
°C  
CS# capacitance  
Data# I/O capacitance  
Address input capacitance  
CCS  
CI/O  
CAD  
VIN = 0V, f = 1.0 MHz  
VI/O = 0V, f = 1.0 MHz  
VIN = 0V, f = 1.0 MHz  
pF  
pF  
pF  
This parameter is guaranteed by design but not tested.  
DC CHARACTERISTICS  
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C  
Parameter  
Sym  
ILI  
ILO  
ICC x 32  
ISB  
VOL  
VOH  
Conditions  
VCC = 3.6, VIN = GND to VCC  
CS# = VIH, OE# = VIH, VOUT = GND to VCC  
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 3.6  
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 3.6  
IOL = 2.1mA, VCC = 3.0  
Min  
Max  
10  
10  
100  
2.0  
0.4  
Units  
μA  
μA  
mA  
mA  
V
Input Leakage Current  
Output Leakage Current  
Operating Supply Current  
Standby Current  
Output Low Voltage  
Output High Voltage  
IOH = -1.0mA, VCC = 3.0  
2.4  
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V.  
Microsemi Corporation reserves the right to change products or specifications without notice.  
May 2011 © 2011 Microsemi Corporation. All rights reserved.  
Rev. 3  
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  
WS512K32V-XXX  
ADVANCED  
AC CHARACTERISTICS  
VCC = 3.3V, GND = 0V, -55°C ≤ TA ≤ +125°C  
-70  
-85  
-100  
-120  
Parameter Read Cycle  
Symbol  
Units  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
Read Cycle Time  
Address Access Time  
Output Hold from Address Change  
Chip Select Access Time  
Output Enable to Output Valid  
Chip Select to Output in Low Z  
Output Enable to Output in Low Z  
Chip Disable to Output in High Z  
Output Disable to Output in High Z  
tRC  
tAA  
tOH  
tACS  
tOE  
70  
85  
100  
120  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
70  
85  
100  
120  
5
5
5
5
70  
35  
85  
40  
100  
50  
120  
60  
1
tCLZ  
10  
5
10  
5
10  
5
10  
5
1
tOLZ  
tCHZ  
tOHZ  
1
25  
25  
25  
25  
35  
35  
35  
35  
1
1. This parameter is guaranteed by design but not tested.  
AC CHARACTERISTICS  
VCC = 3.3V, GND = 0V, -55°C ≤ TA ≤ +125°C  
-70  
-85  
-100  
-120  
Parameter Write Cycle  
Symbol  
Units  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
Write Cycle Time  
tWC  
tCW  
tAW  
tDW  
tWP  
tAS  
70  
60  
60  
30  
50  
0
85  
75  
75  
30  
50  
0
100  
80  
80  
40  
60  
0
120  
100  
100  
40  
60  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Chip Select to End of Write  
Address Valid to End of Write  
Data Valid to End of Write  
Write Pulse Width  
Address Setup Time  
Address Hold Time  
Output Active from End of Write  
Write Enable to Output in High Z  
Data Hold from Write Time  
tAH  
5
5
5
5
5
5
5
5
1
tOW  
1
tWHZ  
tDH  
25  
25  
35  
35  
0
0
0
0
1. This parameter is guaranteed by design but not tested.  
FIGURE 3 – AC TEST CIRCUIT  
AC TEST CONDITIONS  
Parameter  
Input Pulse Levels  
Typ  
Unit  
V
VIL = 0, VIH = 2.5  
Input Rise and Fall  
5
1.5  
1.5  
ns  
V
V
IOL  
Input and Output Reference Level  
Output Timing Reference Level  
NOTES:  
Current Source  
V
I
Z is programmable from -2V to +7V.  
OL & IOH programmable from 0 to 16mA.  
Tester Impedance Z0 = 75 Ω.  
Z is typically the midpoint of VOH and VOL  
OL & IOH are adjusted to simulate a typical resistive load circuit.  
ATE tester includes jig capacitance.  
VZ  
≈
1.5V  
D.U.T.  
(Bipolar Supply)  
C
eff = 50 pf  
V
I
.
IOH  
Current Source  
Microsemi Corporation reserves the right to change products or specifications without notice.  
May 2011 © 2011 Microsemi Corporation. All rights reserved.  
Rev. 3  
4
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  
WS512K32V-XXX  
ADVANCED  
TIMING WAVEFORM – READ CYCLE  
tRC  
ADDRESS  
CS#  
tRC  
tAA  
tAA  
ADDRESS  
DATA I/O  
tCHZ  
tACS  
tCLZ  
tOH  
PREVIOUS DATA VALID  
DATA VALID  
OE#  
tOE  
tOLZ  
tOHZ  
READ CYCLE 1 (CS# = OE# = V , WE# = V  
IL IH  
)
DATA I/O  
DATA VALID  
HIGH IMPEDANCE  
READ CYCLE 2 (WE# = V  
IH  
)
WRITE CYCLE – WE# CONTROLLED  
tWC  
ADDRESS  
tAW  
tAH  
tCW  
CS#  
WE#  
tAS  
tWP  
tOW  
tDH  
tWHZ  
tDW  
DATA I/O  
DATA VALID  
WRITE CYCLE 1, WE# CONTROLLED  
WRITE CYCLE – CS# CONTROLLED  
tWC  
ADDRESS  
tAW  
tAH  
tAS  
tCW  
CS#  
tWP  
WE#  
tDW  
tDH  
DATA I/O  
DATA VALID  
WRITE CYCLE 2, CS# CONTROLLED  
Microsemi Corporation reserves the right to change products or specifications without notice.  
May 2011 © 2011 Microsemi Corporation. All rights reserved.  
Rev. 3  
5
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  
WS512K32V-XXX  
ADVANCED  
PACKAGE 401: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H)  
30.1 (1.185) 0.38 (0.015) Sꢀ  
PIN 1 IDENTIFIER  
SꢀUARE PAD  
ON BOTTOM  
25.4 (1.0) TYP  
6.22 (0.245)  
MAX  
3.81 (0.150)  
0.13 (0.005)  
1.27 (0.050) 0.1 (0.005)  
0.76 (0.030) 0.1 (0.005)  
1.27 (0.050) TYP DIA  
2.54 (0.100)  
TYP  
15.24 (0.600) TYP  
25.4 (1.0) TYP  
0.46 (0.018) 0.05 (0.002) DIA  
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES  
Microsemi Corporation reserves the right to change products or specifications without notice.  
May 2011 © 2011 Microsemi Corporation. All rights reserved.  
Rev. 3  
6
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  
WS512K32V-XXX  
ADVANCED  
PACKAGE 509: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2T)  
4.57 (0.180) MAX  
22.36 (0.880) 0.26 (0.010) Sꢀ  
0.27 (0.011) 0.04 (0.002)  
Pin 1  
0.25 (0.010) REF  
R 0.25  
(0.010)  
24.03 (0.946)  
0.26 (0.010)  
0.19 (0.00  
0.06 (0.0  
1° / 7°  
1.0 (0.040)  
0.127 (0.005)  
23.87  
(0.940) REF  
DETAIL A  
27  
50)  
P
SEE DETAIL "A"  
0.38 (0.015) 0.05 (0.002)  
20.3 (0.800) REF  
The WEDC 68 lead G2T CQFP fills the same  
fit and function as the JEDEC 68 lead CQFJ  
or 68 PLCC. But the G2T has the TCE and  
lead inspection advantage of the CQFP form.  
0 940"  
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES  
Microsemi Corporation reserves the right to change products or specifications without notice.  
May 2011 © 2011 Microsemi Corporation. All rights reserved.  
Rev. 3  
7
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  
WS512K32V-XXX  
ADVANCED  
ORDERING INFORMATION  
W S 512K 32 X V - XXX X X X  
MICROSEMI CORPORATION  
SRAM  
ORGANIZATION, 512Kx32  
User configurable as 1Mx16 or 2Mx8  
IMPROVEMENT MARK:  
N = No Connect at pin 21 and 39 in HIP for Upgrades  
Low Voltage Supply 3.3V ± 10%  
ACCESS TIME (ns)  
PACKAGE TYPE:  
H = Ceramic Hex In Line Package, HIP (Package 401)  
G2T = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 509)  
DEVICE GRADE:  
M = Military  
-55°C to +125°C  
-40°C to +85°C  
0°C to +70°C  
I
= Industrial  
C
= Commercial  
LEAD FINISH:  
Blank = Gold plated leads  
A
= Solder dip leads  
Microsemi Corporation reserves the right to change products or specifications without notice.  
May 2011 © 2011 Microsemi Corporation. All rights reserved.  
Rev. 3  
8
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  
WS512K32V-XXX  
ADVANCED  
Document Title  
512Kx32 SRAM 3.3V MODULE  
Revision History  
Rev # History  
Release Date Status  
Rev 3  
Changes (Pg. 1-9)  
May 2011  
Advanced  
3.1 Change document layout from White Electronic Designs to Microsemi  
3.2 Add document Revision History page  
Microsemi Corporation reserves the right to change products or specifications without notice.  
May 2011 © 2011 Microsemi Corporation. All rights reserved.  
Rev. 3  
9
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  

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