PN4119 [MICROSS]
Linear Systems replaces discontinued Siliconix PN4119; 线性系统替换停产Siliconix的PN4119
| 型号： | PN4119 |
| 厂家： | 
MICROSS COMPONENTS |
| 描述： | Linear Systems replaces discontinued Siliconix PN4119 |
| 文件： | 总1页 (文件大小：280K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PN4119
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix PN4119
The PN4119 is an Ultra-High Input Impedance N-Channel JFET
FEATURES
The PN4119 provides ultra-high input impedance. The
device is specified with a 10-pA limit and is ideal for use
as a high-impedance sensitive front-end amplifier.
DIRECT REPLACEMENT FOR SILICONIX PN4119
LOW POWER
IDSS<90 µA
IGSS<10 pA
MINIMUM CIRCUIT LOADING
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
PN4119 Benefits:
Insignificant Signal Loss/Error Voltage
with High-Impedance Source
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain or Gate to Source (Note 2)
Low Power Consumption (Battery)
Maximum Signal Output, Low Noise
High Sensitivity to Low-Level Signals
‐65°C to +175°C
‐55°C to +150°C
PN4119 Applications:
300mW
50mA
‐40V
High-Impedance Transducer
Smoke Detector Input
Infrared Detector Amplifier
Precision Test Equipment
PN4119 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BVGSS
VGS(off)
IDSS
CHARACTERISTIC
MIN
‐40
‐2
0.20
‐‐
‐‐
100
‐‐
TYP.
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
MAX
‐‐
‐6
0.60
‐10
‐25
330
10
UNITS
V
V
mA
pA
CONDITIONS
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Saturation Current
Gate Leakage Current
IG = ‐1µA, VDS = 0V
VDS = 10V, ID = 1nA
VDS = 10V, VGS = 0V
VGS = ‐20V, VDS = 0V
IGSS
Click To Buy
VGS = ‐20V, VDS = 0V, 150°C
VDS = 10V, VGS = 0V, f = 1kHz
gfs
gos
Ciss
Crss
Forward Transconductance(Note 3)
Output Conductance
µmho
pF
Input Capacitance
‐‐
‐‐
3
1.5
VDS = 10V, VGS = 0V, f = 1MHz
Reverse Transfer Capacitance
1 . Absolute maximum ratings are limiting values above which PN4119 serviceability may be impaired.
2. Due to symmetrical geometry, these units may be operated with source and drain leads interchanged
3. This parameter is measured during a 2ms interval 100ms after power is applied. (Not a JEDEC condition.)
NOTES
Micross Components Europe
Available Packages:
TO-92 (Bottom View)
PN4119 in TO-92
PN4119 in bare die.
Please contact Micross for full
package and die dimensions
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx
相关型号：
PN4119-TO-92
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92, TO-92, 3 PIN
MICROSS
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