XP1018-BD-EV1 [MIMIX]
37.0-42.0 GHz GaAs MMIC Power Amplifier; 37.0-42.0 GHz的砷化镓MMIC功率放大器
| 型号： | XP1018-BD-EV1 |
| 厂家： | 
MIMIX BROADBAND |
| 描述： | 37.0-42.0 GHz GaAs MMIC Power Amplifier |
| 文件： | 总8页 (文件大小：359K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
37.0-42.0 GHz GaAs MMIC
Power Amplifier
February 2007 - Rev 01-Feb-07
P1018-BD
Features
Chip Device Layout
Excellent Transmit Output Stage
Output Power Adjust
26.0 dB Small Signal Gain
+25.0 dBm P1dB Compression Point
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s four stage 37.0-42.0 GHz GaAs
MMIC power amplifier has a small signal gain of 26.0
dB with a +25.0 dBm P1dB output compression point.
This MMIC uses Mimix Broadband’s 0.15 µm GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity.The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process.This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2,3,4)
Gate Bias Voltage (Vg)
Input Power (Pin)
+6.0 VDC
45,80,165,325 mA
+0.3 VDC
TBD
Storage Temperature (Tstg) -65 to +165 OC
Operating Temperature (Ta) -55 to MTTF Table
1
1
Channel Temperature (Tch) MTTF Table
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (AmbientTemperatureT = 25 oC)
Parameter
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Units
GHz
dB
dB
dB
Min.
37.0
-
-
-
-
-
-
Typ.
-
9.0
Max.
42.0
-
-
-
-
-
-
+5.5
0.0
40
70
150
295
10.0
26.0
+/-1.5
45.0
+25.0
+5.0
-0.7
35
dB
dB
Reverse Isolation (S12)
2
Output Power for 1dB Compression (P1dB)
Drain Bias Voltage (Vd1,2,3,4)
Gate Bias Voltage (Vg1,2,3,4)
Supply Current (Id1) (Vd=5.0V,Vg=-0.7V Typical)
Supply Current (Id2) (Vd=5.0V,Vg=-0.7V Typical)
Supply Current (Id3) (Vd=5.0V,Vg=-0.7V Typical)
Supply Current (Id4) (Vd=5.0V,Vg=-0.7V Typical)
(2) Measured using constant current.
dBm
VDC
VDC
mA
mA
mA
mA
-
-1.0
-
-
-
-
60
125
245
Page 1 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
37.0-42.0 GHz GaAs MMIC
Power Amplifier
February 2007 - Rev 01-Feb-07
P1018-BD
Power Amplifier Measurements
XP1018 Vd1,2,3,4=5.0 V Id1=35 mA, Id2=60 mA, Id3=125 mA,
XP1018 Vd1,2,3,4=5.0 V Id1=35 mA, Id2=60 mA, Id3=125 mA,
Id4=245 mA, ~2500 Devices
Id4=245 mA, ~2500 Devices
30
0
-10
-20
-30
-40
-50
-60
-70
-80
29
28
27
26
25
24
23
22
21
20
35
36
37
38
39
Frequency (GHz)
Median Mean
40
41
42
43
44
45
35
36
37
38
39
Frequency (GHz)
Median Mean
40
41
42
43
44
45
Max
-3sigma
Max
-3sigma
XP1018 Vd1,2,3,4=5.0 V Id1=35 mA, Id2=60 mA, Id3=125 mA,
Id4=245 mA, ~2500 Devices
XP1018 Vd1,2,3,4=5.0 V Id1=35 mA, Id2=60 mA, Id3=125 mA,
Id4=245 mA, ~2500 Devices
0
-2
-4
0
-2
-4
-6
-6
-8
-8
-10
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
-32
-10
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
-32
35
36
37
38
39
40
41
42
43
44
45
35
36
37
38
39
Frequency (GHz)
Median Mean
40
41
42
43
44
45
Frequency (GHz)
Max
Median
Mean
-3sigma
Max
-3sigma
XP1018-BD: Pout (dBm) vs. freq (GHz) Pin=-5..+5
27
26
25
24
23
22
21
20
36
36.5
37
37.5
38
38.5
39
39.5
40
40.5
41
freq (GHz)
Page 2 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
37.0-42.0 GHz GaAs MMIC
Power Amplifier
February 2007 - Rev 01-Feb-07
P1018-BD
Typical S-Parameter Data
Vd=5.0 V Id1=35 mA, Id2=60 mA, Id3=125 mA, Id4=245 mA
Frequency
(GHz)
30.0
31.0
32.0
33.0
34.0
35.0
36.0
37.0
38.0
39.0
40.0
41.0
42.0
43.0
44.0
45.0
46.0
47.0
48.0
49.0
50.0
S11
S11
(Ang)
S21
S21
(Ang)
126.18
93.29
57.85
18.79
-23.67
-73.36
-133.53
154.86
87.55
S12
(Mag)
S12
(Ang)
125.63
103.26
90.17
31.96
-9.64
-96.69
107.67
134.73
57.83
35.08
49.33
27.34
4.03
S22
S22
(Ang)
(Mag)
0.940
0.918
0.895
0.865
0.799
0.668
0.392
0.056
0.361
0.431
0.390
0.294
0.215
0.235
0.318
0.372
0.357
0.208
0.167
0.372
0.534
(Mag)
0.973
1.439
2.174
3.330
5.328
8.807
13.998
17.870
17.691
16.144
15.076
15.492
16.183
15.015
11.838
8.093
5.027
2.823
1.439
0.680
0.311
(Mag)
0.793
0.737
0.685
0.605
0.518
0.436
0.310
0.239
0.179
0.178
0.203
0.248
0.326
0.355
0.361
0.355
0.407
0.450
0.526
0.591
0.637
166.72
160.79
154.19
146.15
134.26
116.35
89.70
-139.88
-163.89
172.55
158.03
155.03
170.09
-171.97
-166.98
-177.71
153.74
110.14
-13.13
-58.88
-86.46
0.0016
0.0014
0.0027
0.0015
0.0009
0.0006
0.0019
0.0028
0.0027
0.0019
0.0023
0.0026
0.0029
0.0015
0.0031
0.0029
0.0016
0.0006
0.0008
0.0008
0.0013
-116.09
-127.95
-141.44
-155.99
-171.42
169.08
147.17
119.47
106.28
73.00
29.35
-23.67
-78.70
-139.23
152.39
80.99
42.37
0.33
-40.82
-80.28
-113.60
-134.54
-155.94
-176.19
165.42
147.23
131.07
-20.71
-9.65
13.07
-57.16
-84.71
-129.77
-49.86
-83.22
-113.98
-52.46
-114.47
-174.53
134.81
88.80
Page 3 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
37.0-42.0 GHz GaAs MMIC
Power Amplifier
February 2007 - Rev 01-Feb-07
P1018-BD
0.592
0.992
1.392
2.193
Mechanical Drawing
(0.023)
(0.039)
(0.055)
(0.086)
1.700
(0.067)
5
2
3
4
1.099
1
(0.043)
0.639
(0.025)
6
10
9
8
7
0.0
0.592
0.992
1.392
1.993
(0.078)
2.500
(0.098)
0.0
(0.023)
(0.039)
(0.055)
(Note: Engineering designator is 38MPA0725)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 2.241 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vd1)
Bond Pad #3 (Vd2)
Bond Pad #4 (Vd3)
Bond Pad #5 (Vd4)
Bond Pad #6 (RF Out)
Bond Pad #7 (Vg4)
Bond Pad #8 (Vg3)
Bond Pad #9 (Vg2)
Bond Pad #10 (Vg1)
Bias Arrangement
Bypass Capacitors - See App Note [2]
Vd2
Vd4
Vd1
Vd3
5
2
3
4
1
RF In
6
RF Out
10
9
8
7
Vg4
Vg1
Vg2
Vg3
Page 4 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
37.0-42.0 GHz GaAs MMIC
Power Amplifier
February 2007 - Rev 01-Feb-07
P1018-BD
App Note [1] Biasing - It is recommended to separately bias each amplifier stage Vd1 through Vd4 at Vd(1,2,3,4)=5.0V with Id1=35mA, Id2=60mA,
Id3=125mA and Id4=245mA. Separate biasing is recommended if the amplifier is to be used at high levels of saturation, where gate rectification will
alter the effective gate control voltage. For non-critical applications it is possible to parallel all stages and adjust the common gate voltage for a
total drain current Id(total)=465 mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature
vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may
be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current.The
gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.7V.
Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative
gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass
capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or
drains are tied together) of DC bias pads.
For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd1,2,3,4 and Vg1,2,3,4) needs to have DC bypass capacitance
(~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
App Note [3] Output Power Adjust Using Gate Control - This device has a very useful additional feature.The output power can be adjusted by
lowering the individual or combined gate voltages towards pinch off without sacrificing much in the way of Input/Output 3rd Order Intercept Point.
Improvements to the IIP3/OIP3 data shown here while attenuating the gain are also possible with individual gate control. Data here has been taken
using combined gate control (all gates changed together) to lower the device's output power.The results are shown below. Additionally, the
accompanying graphs show the level and linearity of the typical attenuation achievable as the gate is adjusted at various levels until pinch-off.
XP1018-BD: Pout vs. Vd @ 40 GHz and Pin=+5dBm
20
10
0
-10
-20
-30
-40
-50
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Drain voltage (V)
Page 5 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
37.0-42.0 GHz GaAs MMIC
Power Amplifier
February 2007 - Rev 01-Feb-07
P1018-BD
MTTF Graphs
XP1018 Vd1,2,3,4=5.0 V, Id1=35 mA, Id2=60 mA,
XP1018 Vd1,2,3,4=5.0 V, Id1=35 mA, Id2=60 mA,
Id3=125 mA, Id4=245 mA
Id3=125 mA, Id4=245 mA
1.00E+08
1.00E+05
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1.00E+00
1.00E+07
1.00E+06
1.00E+05
1.00E+04
1.00E+03
55
65
75
85
95
105
115
125
55
65
75
85
95
105
115
125
Baseplate Temperature (deg C)
Baseplate Temperature (deg C)
No RF
Pout=P1dB
No RF
Pout=P1dB
XP1018 Vd1,2,3,4=5.0 V, Id1=35 mA, Id2=60 mA,
Id3=125 mA, Id4=245 mA
XP1018 Vd1,2,3,4=5.0 V, Id1=35 mA, Id2=60 mA,
Id3=125 mA, Id4=245 mA
275
250
225
200
175
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
150
55
55
65
75
85
95
105
115
125
65
75
85
95
105
115
125
Baseplate Temperature (deg C)
Baseplate Temperature (deg C)
No RF
Pout=P1dB
No RF
Pout=P1dB
Page 6 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
37.0-42.0 GHz GaAs MMIC
Power Amplifier
February 2007 - Rev 01-Feb-07
P1018-BD
Typical Application
IF In
2 GHz
XP1018
XU1004
Coupler
RF OUT
37.0-39.5 GHz
Mixer
Buffer
X2
LO(+2.0dBm)
17.5-18.75 GHz (USB Operation)
19.5-20.75 GHz (LSB Operation)
Mimix Broadband MMIC-based 37.0-42.0 GHz Transmitter Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 42 GHz)
Mimix Broadband's 35.0-45.0 GHz XU1004 GaAs MMIC Transmitter can be used in saturated radio applications and linear modulation
schemes up to 128 QAM.The receiver can be used in upper and lower sideband applications from 37.0-42.0 GHz.
Page 7 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
37.0-42.0 GHz GaAs MMIC
Power Amplifier
February 2007 - Rev 01-Feb-07
P1018-BD
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the
human body and the environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product.This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support
devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As
used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user.
(2) A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in
antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic work-
station. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.076 mm (0.003") thick and have vias through to the
backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible.The
mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die
Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy
sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die
periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note. If
eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.0012 thick, placed between the
die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action
to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended.The gold-tin eutectic
(80% Au 20% Sn) has a melting point of approximately 280º C (Note: Gold Germanium should be avoided).The work
station temperature should be 310ºC +/- 10ºC. Exposure to these extreme temperatures should be kept to minimum.
The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force
impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the
die's gold bond pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99%
pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter
wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided.Thermo-compression
bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is
minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on
the die to the package or substrate. All bonds should be as short as possible.
Part Number for Ordering
Description
XP1018-BD-000X
Where “X” is RoHS compliant die packed in “V” - vacuum release gel packs or
“W” - waffle trays
XP1018-BD-EV1
XP1018-BD evaluation module
Page 8 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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