M63817P [MITSUBISHI]
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE; 带钳位二极管8 -UNIT 300毫安晶体管阵列
| 型号： | M63817P |
| 厂家： | 
Mitsubishi Group |
| 描述： | 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| 文件： | 总5页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63817P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
PIN CONFIGURATION
M63817P/FP/KP are eight-circuit Single transistor arrays
with clamping diodes. The circuits are made of NPN transis-
tors. Both the semiconductor integrated circuits perform
high-current driving with extremely low input-current supply.
→
IN1→
1
2
3
4
5
6
7
8
9
18
17
16
O1
→
IN2
→
→
→
→
→
→
O2
O3
O4
O5
O6
O7
→
IN3
→
IN4
15
14
13
12
11
10
OUTPUT
INPUT
→
IN5
→
IN6
→
IN7
FEATURES
● Three package configurations (P, FP, and KP)
→
IN8
→
O8
●
Medium breakdown voltage (BVCEO ≥ 35V)
→COM
GND
COMMOM
● Synchronizing current (IC(max) = 300mA)
●
With clamping diodes
Package type 18P4G(P)
●
Low output saturation voltage
●
Wide operating temperature range (Ta = –40 to +85°C)
20
19
18
17
16
15
14
13
12
11
1
2
NC
IN1
IN2
IN3
IN4
IN5
IN6
IN7
IN8
NC
→
→
→
→
→
→
→
→
→
O1
O2
O3
O4
O5
O6
O7
O8
→
→
→
→
→
→
→
→
3
4
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
5
INPUT
OUTPUT
6
7
8
9
10
COMMOM
COM
GND
FUNCTION
NC : No connection
The M63817P/FP/KP each have eight circuits consisting of
NPN transistor. A spike-killer clamping diode is provided be-
tween each output pin (collector) and COM pin. The transis-
tor emitters are all connected to the GND pin. The transistors
allow synchronous flow of 300mA collector current. A maxi-
mum of 35V voltage can be applied between the collector
and emitter.
20P2N-A(FP)
Package type 20P2E-A(KP)
CIRCUIT DIAGRAM
COM
OUTPUT
INPUT
10.5k
10k
GND
The eight circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit: Ω
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63817P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VCEO
IC
Parameter
Collector-emitter voltage
Collector current
Conditions
Ratings
–0.5 ~ +35
300
Unit
V
Output, H
Current per circuit output, L
mA
V
–0.5 ~ +35
300
VI
Input voltage
mA
V
IF
Clamping diode forward current
Clamping diode reverse voltage
VR
35
M63817P
Ta = 25°C, when mounted M63817FP
on board
1.79
Pd
1.10
W
Power dissipation
0.68
M63817KP
Topr
Tstg
–40 ~ +85
–55 ~ +125
°C
°C
Operating temperature
Storage temperature
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Limits
typ
—
Symbol
VO
Parameter
Output voltage
Test conditions
Unit
V
min
0
max
35
Duty Cycle no more than 50%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 12%
Duty Cycle no more than 100%
0
—
250
170
250
130
250
100
30
Collector current
(Current per 1 cir-
cuit when 8 circuits
are coming on si-
multaneously)
M63817P
M63817FP
M63817KP
0
—
0
—
mA
V
IC
0
—
0
—
0
—
0
—
VIN
Input voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol Parameter Test conditions
Limits
typ
—
Unit
V
min
35
—
max
—
V
(BR) CEO Collector-emitter breakdown voltage
ICEO = 10µA
IIN = 1mA, IC = 10mA
IIN = 2mA, IC = 150mA
IIN = 1mA, IC = 10mA
IF = 250mA
—
0.2
0.8
15.0
2.0
10
Collector-emitter saturation voltage
VCE(sat)
V
—
—
V
V
VIN(on)
VF
“On” input voltage
7.5
—
11.0
1.2
—
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
µA
—
IR
—
VR = 35V
hFE
50
—
—
VCE = 10V, IC = 10mA
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol Parameter Test conditions
Limits
typ
Unit
min
—
max
—
120
240
ns
ns
ton
toff
Turn-on time
Turn-off time
CL = 15pF (note 1)
—
—
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63817P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
Vo
INPUT
50%
50%
INPUT
Measured device
R
L
L
OPEN
PG
OUTPUT
OUTPUT
50%
50%
ton
50Ω
C
toff
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, VIH = 11V
(2)Input-output conditions : R
(3)Electrostatic capacity C includes floating capacitance at
connections and input capacitance at probes
L = 220Ω, Vo = 35V
L
TYPICAL CHARACTERISTICS
Input Characteristics
Thermal Derating Factor Characteristics
4
3
2
1
2.0
1.5
1.0
0.5
0
M63817P
Ta = –40°C
Ta = 25°C
M63817FP
M63817KP
0.931
Ta = 85°C
0.572
0.354
0
0
0
25
50
75 85 100
5
10
15
20
(V)
25
30
Ambient temperature Ta (°C)
Input voltage V
I
Duty Cycle-Collector Characteristics
(M63817P)
Duty Cycle-Collector Characteristics
(M63817P)
400
300
400
1~5
6
300
200
100
0
1~3
7
4
5
6
7
8
8
200
100
0
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
0
100
20
40
60
80
100
20
40
60
80
0
Duty cycle (%)
Duty cycle (%)
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63817P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Duty Cycle-Collector Characteristics
(M63817FP)
Duty Cycle-Collector Characteristics
(M63817FP)
400
300
200
100
0
400
1~3
4
1
2
300
200
5
6
7
8
3
4
5
6
8
7
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
100
0
0
100
0
20
40
60
80
20
40
60
80
100
Duty cycle (%)
Duty cycle (%)
Duty Cycle-Collector Characteristics
(M63817KP)
Duty Cycle-Collector Characteristics
(M63817KP)
400
400
300
1~2
1
300
200
3
2
3
4
5
6
7
8
200
100
0
4
5
6
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
7
100
0
8
0
100
0
20
40
60
80
20
40
60
80
100
Duty cycle (%)
Duty cycle (%)
Output Saturation Voltage
Output Saturation Voltage
Collector Current Characteristics
Collector Current Characteristics
250
200
150
100
80
Ta = 25°C
= 3mA
V
I
= 28V
IB = 2mA
Ta = 25°C
V
I = 24V
I
B
IB = 1.5mA
V
I
= 20V
V
I = 16V
IB = 1mA
60
V
I
= 12V
= 8V
VI
40
20
100
50
IB = 0.5mA
0
0
0
0.2
0.4
0.6
0.8
0
0.05
0.10
0.15
0.20
Output saturation voltage VCE(sat) (V)
Output saturation voltage VCE(sat) (V)
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63817P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Output Saturation Voltage
Collector Current Characteristics
DC Amplification Factor
Collector Current Characteristics
103
100
80
VCE 10V
I
I
= 2mA
7
5
Ta = 25°C
Ta = –40°C
Ta = 25°C
Ta = 85°C
3
2
60
40
20
102
7
5
3
2
101
0
100
2
3
5 7 101
2 3 2 3
5 7 102 5 7 103
0
0.05
0.10
0.15
0.20
Output saturation voltage VCE(sat) (V)
Collector current Ic (mA)
Grounded Emitter Transfer Characteristics
Grounded Emitter Transfer Characteristics
50
40
30
20
10
0
250
200
150
V
CE = 4V
V
CE = 4V
Ta = 85°C
Ta = 85°C
Ta = 25°C
Ta = –40°C
100
50
Ta = –40°C
Ta = 25°C
0
0
4
8
12
16
20
0
1.0
2.0
3.0
4.0
5.0
Input voltage V
I
(V)
Input voltage VI (V)
Clamping Diode Characteristics
250
200
150
Ta = 85°C
100
50
0
Ta = 25°C
Ta = –40°C
0
0.4
0.8
1.2
1.6
2.0
Forward bias voltage VF (V)
Jan. 2000
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