M68731L [MITSUBISHI]
SILICON MOS FET POWER AMPLIFIER, 135-155MHz, 7W, FM PORTABLE RADIO; 硅MOS场效应管功率放大器， 135-155MHz ， 7W ， FM PORTABLE RADIO
| 型号： | M68731L |
| 厂家： | 
Mitsubishi Group |
| 描述： | SILICON MOS FET POWER AMPLIFIER, 135-155MHz, 7W, FM PORTABLE RADIO |
| 文件： | 总3页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI RF POWER MODULE
M68731L
SILICON MOS FET POWER AMPLIFIER, 135-155MHz, 7W, FM PORTABLE RADIO
Dimensions in mm
OUTLINE DRAWING
BLOCK DIAGRAM
30±0.2
2
3
26.6±0.2
21.2±0.2
2-R1.5±0.1
1
4
5
5
1
2
3
4
0.45
6±1
PIN:
13.7±1
18.8±1
1
2
3
4
5
Pin : RF INPUT
VGG : GATE BIAS SUPPLY
VDD : DRAIN BIAS SUPPLY
PO : RF OUTPUT
23.9±1
GND: FIN
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol
VDD
Parameter
Conditions
Ratings
Unit
V
Supply voltage
Gate bias voltage
Input power
VGG£3.5V, ZG=ZL=50W
9.2
4
VGG
V
Pin
f=135-155MHz, ZG=ZL=50W
f=135-155MHz, ZG=ZL=50W
f=135-155MHz, ZG=ZL=50W
70
10
mW
W
PO
Output power
TC (OP)
Operation case temperature
Storage temperature
-30 to +100
-40 to +110
°C
°C
Tstg
Note. Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C,ZG=ZL=50Wunless otherwise noted)
Symbol Parameter Test conditions
Limits
Unit
Min
Max
155
f
Frequency range
Output power
Total efficiency
135
7
MHz
W
PO
hT
VDD=7.2V,
VGG=3.5V,
Pin=50mW
50
%
2nd. harmonic
Input VSWR
2fO
r in
-20
4
dBc
-
ZG=50W, VDD=4-9.2V,
Load VSWR<4:1
No parasitic oscillation
-
-
-
-
Stability
No degradation or
destroy
VDD=9.2V, Pin=50mW,
PO=7W (VGG adjust), ZL=20:1
Load VSWR tolerance
Note. Above parameters, ratings, limits and test conditions are subject to change.
Nov. ´97
MITSUBISHI RF POWER MODULE
M68731L
SILICON MOS FET POWER AMPLIFIER, 135-155MHz, 7W, FM PORTABLE RADIO
TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR,
TOTAL EFFICIENCY VS. FREQUENCY
OUTPUT POWER, TOTAL EFFICENCY
VS. INPUT POWER
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
130
90
80
70
60
50
40
30
20
100
VDD=7.2V
VGG=3.5V
Pin=50mW
VDD=7.2V
VGG=3.5V
f=135MHz
PO
PO
10
1
100
10
1
hT
hT
r in
0.1
0.01
140
150
160
170
180
0.1
1
10
100
FREQUENCY f (MHz)
INPUT POWER Pin (mW)
OUTPUT POWER, TOTAL EFFICENCY
VS. INPUT POWER
OUTPUT POWER, TOTAL EFFICIENCY
VS. SUPPLY VOLTAGE
100
16
100
90
80
70
60
50
40
30
20
VDD=7.2V
VGG=3.5V
f=155MHz
f=135MHz
14 VGG=3.5V
Pin=50mW
12
PO
10
1
100
10
1
10
8
hT
hT
6
PO
4
2
0.1
0.01
0
0.1
1
10
100
3
4
5
6
7
8
9
INPUT POWER Pin (mW)
SUPPLY VOLTAGE VDD (V)
OUTPUT POWER, TOTAL EFFICIENCY
VS. SUPPLY VOLTAGE
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE VOLTAGE
16
100
90
80
70
60
50
40
30
20
100
10
1
f=155MHz
VDD=7.2V
Pin=50mW
f=135MHz
14 VGG=3.5V
Pin=50mW
12
PO
100
10
1
10
8
hT
hT
6
PO
4
2
0
0.1
0.5
3
4
5
6
7
8
9
1
1.5
2
2.5
3
3.5
SUPPLY VOLTAGE VDD (V)
GATE VOLTAGE VGG (V)
Nov. ´97
MITSUBISHI RF POWER MODULE
M68731L
SILICON MOS FET POWER AMPLIFIER, 135-155MHz, 7W, FM PORTABLE RADIO
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE VOLTAGE
100
10
1
VDD=7.2V
Pin=50mW
f=155MHz
PO
100
hT
10
0.1
0.5
1
3.5
1
1.5
2
2.5
3
GATE VOLTAGE VGG (V)
Nov. ´97
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