MGF0920A-03 [MITSUBISHI]

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, SMD, 3 PIN;


型号：	MGF0920A-03
厂家：	Mitsubishi Group
描述：	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, SMD, 3 PIN 放大器晶体管
文件：	总4页 (文件大小：105K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

< High-power GaAs FET (small signal gain stage) >

MGF0920A

L & S BAND / 1.6W

SMD non - matched

DESCRIPTION

The MGF0920A GaAs FET with an N-channel schottky

Gate, is designed for use UHF band amplifiers.

FEATURES

 High output power

Po=32dBm(TYP.) @f=1.9GHz,Pin=15dBm

 High power gain

Gp=18dB(TYP.) @f=1.9GHz

 High power added efficiency

add=45%(TYP.) @f=1.9GHz,Pin=15dBm

 Hermetic Package

APPLICATION

 For UHF Band power amplifiers

QUALITY

 GG

Fig.1

RECOMMENDED BIAS CONDITIONS

 Vds=10V  Ids=400mA  Rg=200

Delivery

-01:Tape & Reel(1K), -03:Trai(50pcs)

Absolute maximum ratings (Ta=25C)

Symbol

Parameter

Ratings

Unit

Gate to source

breakdown voltage

VGSO

-15

VGDO Gate to drain breakdown voltage

Drain current

1500

-3.6

IGR

IGF

Reverse gate current

Forward gate current

Total power dissipation

Cannel temperature

Storage temperature

8.3

Tch

Tstg

175

C

-65 to +175

Electrical characteristics

(Ta=25C)

Symbol

Parameter

Test conditions

Limits

Unit

Min.

Typ.

Max.

1500

Saturated drain current

VDS=3V,VGS=0V

1000

IDSS

Gate to source cut-off voltage

Transconductance

VDS=3V,ID=3.0mA

VDS=3V,ID=400mA

VDS=10V,ID=400mA,f=1.9GHz

Pin=15dBm

-1.0

-5.0

dBm

VGS(off)

370

Output power

add

GLP

Power added Efficiency

Linear Power Gain

VDS=10V,ID=400mA,f=1.9GHz

Vf Method

Rth(ch-c) Thermal Resistance *1

C/W

*1:_{Channel to case /}

Above parameters, ratings, limits are subject to change.

Publication Date : Apr., 2011

< High-power GaAs FET (small signal gain stage) >

MGF0920A

L & S BAND / 1.6W

SMD non - matched

MGF09120A TYPICAL CHARACTERISTICS

Po,Gp,PAE vs.Pi

Vds=10V

Id(off)=400mA

f=1.9GHz

PAE

-10

-5

Pin(dBm)

Pi(SCL) vs.Po(SCL),IM3

VD=10V

ID=400mA

f1=1.90GHz

f2=1.91GHz

-10

-20

-30

-40

-50

-60

-70

IM3

-5

-10

-15 -10

-5

Pin(SCL)(dBm)

Publication Date : Apr., 2011

< High-power GaAs FET (small signal gain stage) >

MGF0920A

L & S BAND / 1.6W

SMD non - matched

MGF0920A S PARAMETERS (Ta=25C,VD=10V,ID=400mA, Reference Plane see Fig.1)

freq.

(MHz)

600

S11

S21

S12

S22

MAG/MSG

(dB)

(mag)

0.930

0.912

0.903

0.899

0.900

0.901

0.900

0.897

0.893

0.887

0.880

0.871

0.861

0.849

0.836

0.822

0.805

0.785

0.761

0.730

0.690

0.638

0.588

0.547

0.534

0.562

0.641

0.770

(ang)

-96.03

(mag)

7.784

5.692

4.233

3.242

2.584

2.156

1.879

1.696

1.565

1.462

1.370

1.283

1.199

1.121

1.054

1.003

0.971

0.963

0.978

1.016

1.071

1.139

1.212

1.282

1.344

1.393

1.431

1.464

1.509

1.597

(ang)

119.71

100.24

85.39

73.85

64.56

56.76

49.88

43.51

37.40

31.40

25.42

19.44

13.46

7.49

(mag)

0.019

0.023

0.024

0.022

0.021

0.020

0.019

0.020

0.021

0.023

0.025

0.028

0.031

0.034

0.039

0.044

0.050

0.058

0.067

0.078

0.093

0.110

0.131

0.156

0.186

0.221

0.260

0.305

(ang)

39.54

26.68

17.80

12.03

8.64

7.04

6.70

7.24

8.31

(mag)

0.367

0.427

0.476

0.516

0.552

0.583

0.612

0.638

0.662

0.684

0.703

0.718

0.730

0.738

0.742

0.744

0.743

0.739

0.734

0.728

0.720

0.712

0.703

0.690

0.671

0.644

0.601

0.537

0.440

0.300

(ang)

-155.36

-155.22

-154.99

-154.82

-154.81

-155.02

-155.50

-156.24

-157.24

-158.46

-159.84

-161.35

-162.91

-164.48

-166.00

-167.44

-168.79

-170.03

-171.21

-172.37

-173.62

-175.10

-176.99

-179.52

176.62

172.09

167.44

162.49

158.74

165.54

0.25

0.32

0.42

0.54

0.75

0.91

1.06

1.20

1.24

1.20

1.19

1.15

1.14

1.18

1.24

1.20

1.16

1.10

0.99

0.90

0.82

0.75

0.74

0.73

0.72

0.70

0.66

0.61

0.58

26.12

23.94

22.46

21.31

20.70

20.11

18.23

16.82

16.23

15.95

15.54

15.13

14.48

13.73

12.76

11.78

11.27

10.94

10.98

12.43

12.04

11.64

11.15

10.66

10.11

9.51

1000

1400

1800

2200

2600

3000

3400

3800

4200

4600

5000

5400

5800

6200

6600

7000

7400

7800

8200

8600

9000

9400

9800

10200

10600

11000

11400

11800

12200

-124.52

-140.36

-149.63

-155.96

-161.19

-165.84

-169.78

-172.74

-174.91

-177.52

178.90

176.64

172.31

167.25

162.24

157.65

153.50

149.52

145.30

140.29

133.94

125.77

115.44

102.87

88.25

9.66

11.07

12.38

13.47

14.22

14.56

14.40

13.69

12.36

10.31

7.49

1.52

-4.44

-10.45

-16.57

-22.92

-29.63

-36.87

-44.85

-53.74

-63.76

-75.07

-87.81

3.78

-0.92

-6.73

-13.79

-22.25

-32.28

-44.04

-57.73

-73.53

-91.61

72.23

55.90

40.93

29.66

-102.03

-117.69

-134.63

-152.53

8.86

8.21

7.64

7.19

2.0

0.8

Gate Mark

Round corner

0.80

Gate Mark

(1)

Reference Plane

(3)

Reference Plane

(2) _0.6

(2)

0.25

4.00

2.5

BACK SIDE PATTERN

(1) Gate

(2) Drain

(3) Source

(Unit:mm)

Fig.1 OUTLINE DRAWING

Publication Date : Apr., 2011

< High-power GaAs FET (small signal gain stage) >

MGF0920A

L & S BAND / 1.6W

SMD non - matched

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Publication Date : Apr., 2011

MGF0920A-03 [MITSUBISHI]

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