MGF1425B [MITSUBISHI]

RF Small Signal Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET;
MGF1425B
型号: MGF1425B
厂家: Mitsubishi Group    Mitsubishi Group
描述:

RF Small Signal Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

放大器 晶体管
文件: 总1页 (文件大小:185K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

MGF1425B-01

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, GD-9, 4 PIN
MITSUBISHI

MGF1425BV-01

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, GD-9, 4 PIN
MITSUBISHI

MGF1425BX-01

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, GD-9, 4 PIN
MITSUBISHI

MGF1451A

Low Noise MES FET
MITSUBISHI

MGF1601

Transistor
MITSUBISHI

MGF1601A-01

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4
MITSUBISHI

MGF1601B

MICROWAVE POWER GaAs FET
MITSUBISHI

MGF1601B_1

MICROWAVE POWER GaAs FET
MITSUBISHI

MGF1601B_11

High-power GaAs FET (small signal gain stage)
MITSUBISHI

MGF1801

MICROWAVE POWER GaAs FET
MITSUBISHI

MGF1801-01

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4
MITSUBISHI

MGF1801B

MICROWAVE POWER GaAs FET
MITSUBISHI