MGF4316G [MITSUBISHI]
Super Low Noise InGaAs HEMT; 超低噪音的InGaAs HEMT
| 型号： | MGF4316G |
| 厂家： | 
Mitsubishi Group |
| 描述： | Super Low Noise InGaAs HEMT |
| 文件： | 总3页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF431xG
Super Low Noise InGaAs HEMT
DESCRIPTION
OUTLINE DRAWING
The MGF431xG series super-low-noise HEMT(High Electron
Mobility Transistor) is designed for use in L to K band amplifiers.
The hermetically sealed metal-ceramic package assures
minimum parasitic losses, and has a configuration suitable for
microstrip circuits.
FEATURES
Low noise figure
@ f=12GHz
MGF4316G : NF min.=0.80dB (MAX.)
MGF4319G : NF min.=0.50dB (MAX.)
High associated gain
Gs=12.0 dB (MIN.)
@ f=12GHz
APPLICATION
L to K band low noise amplifiers.
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
GD-4
Refer to Bias Procedure
( Ta=25°C )
ABSOLUTE MAXIMUM RATINGS
< Keep safety first in your circuit designs! >
Symbol
VGDO
VGSO
ID
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Ratings
Unit
V
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (i)placement of
-4
-4
60
V
mA
mW
°C
°C
PT
Total power dissipation
Channel temperature
Storage temperature
50
Tch
125
Tstg
-65 ~ +125
substitutive, auxiliary circuits, (ii)use of non-flammable
material or (iii)prevention against any malfunction or mishap.
( Ta=25°C )
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Unit
Min.
-3
Typ.
—
Max
—
V(BR)GDO
IGSS
Gate to drain breakdown voltage IG= -10µA
V
Gate to source leakage current
Saturated drain current
Gate to Source cut-off voltage
Transconductance
VGS= -2V, VDS=0V
VGS=0V, VDS=2V
—
—
50
µA
mA
V
IDSS
15
-0.1
—
—
60
VGS (off)
gm
VDS=2V, ID=500µA
—
-1.5
—
VDS=2V, ID=10mA
75
mS
dB
Gs
Associated gain
VDS=2V, ID=10mA, f=12GHz
12
—
13.5
—
—
MGF4316G
MGF4319G
0.8
0.5
—
VDS=2V, ID=10mA, f=12GHz
NFmin
Minimum noise figure
dB
—
—
*1
Rth (ch-a)
Thermal resistance
DVf method
—
625
˚C/W
*1 : Channel to ambient
as of Apr.'98
MITSUBISHI
ELECTRIC
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF431xG
Super Low Noise InGaAs HEMT
Typical Characteristics
as of Apr.'98
MITSUBISHI
ELECTRIC
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF431xG
Super Low Noise InGaAs HEMT
Typical Characteristics
S Parameters (Ta=25˚C , VDS=2V , ID=10mA )
f
(GHz)
1
S11
S21
S12
S22
MSG/MAG
(dB)
K
Magn.
0.990
0.967
0.925
0.874
0.831
0.783
0.743
0.706
0.682
0.670
0.639
0.617
0.591
0.571
0.565
0.560
0.533
0.484
Angle
-22.3
Magn.
5.775
5.585
5.401
5.161
4.899
4.626
4.316
4.100
3.887
3.765
3.617
3.526
3.421
3.349
3.333
3.349
3.356
3.337
Angle
158.1
140.6
128.9
111.8
96.8
Magn.
0.020
0.035
0.051
0.064
0.075
0.083
0.087
0.090
0.093
0.094
0.095
0.096
0.094
0.094
0.096
0.098
0.101
0.104
Angle
71.9
61.8
53.3
42.4
29.3
19.0
9.1
Magn.
0.533
0.514
0.489
0.457
0.424
0.391
0.369
0.357
0.357
0.351
0.339
0.329
0.328
0.328
0.343
0.351
0.337
0.310
Angle
-19.2
28.8
26.5
24.3
21.6
19.8
18.1
16.8
15.9
15.1
14.7
14.0
13.5
13.0
12.7
12.7
12.7
12.5
12.1
0.10
0.19
0.27
0.35
0.43
0.50
0.57
0.64
0.69
0.72
0.80
0.86
0.91
0.95
0.96
0.98
1.01
1.11
2
-40.6
-33.4
3
-53.2
-42.9
4
-70.9
-58.2
5
-88.8
-71.6
6
-105.7
-120.6
-132.1
-144.7
-159.1
-171.8
175.3
163.1
152.9
140.1
125.8
109.8
91.2
80.8
-87.5
7
67.9
-100.6
-110.8
-122.3
-133.0
-143.5
-154.0
-163.9
-171.3
179.5
170.5
161.8
151.6
8
56.4
4.1
9
43.2
-6.4
10
11
12
13
14
15
16
17
18
30.1
-14.3
-24.4
-33.5
-42.5
-50.9
-61.1
-74.1
-88.8
-105.1
17.5
4.5
-8.1
-17.4
-29.6
-44.4
-59.9
-77.0
Noise Parameters (Ta=25˚C , VDS=2V , ID=10mA )
G opt.
NFmin.(dB)
f
Rn
Gs
(GHz)
(W)
(dB)
MGF4316G MGF4319G
Magn.
0.76
0.59
0.48
0.41
0.34
Angle
49
4
8
12.5
4.7
2.3
1.8
1.5
0.31
0.47
0.60
0.69
0.88
0.24
0.35
0.45
0.50
0.61
18.3
15.9
13.5
12.3
9.9
95
12
14
18
139
166
-142
as of Apr.'98
MITSUBISHI
ELECTRIC
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