MGF4318E-30 [MITSUBISHI]

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4;
MGF4318E-30
型号: MGF4318E-30
厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述:

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4

放大器 晶体管
文件: 总12页 (文件大小:757K)
下载:  下载PDF数据表文档文件

MGF4319

Super Low Noise InGaAs HEMT

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30 MITSUBISHI

MGF4319F

Transistor

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0 MITSUBISHI

MGF4319F-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

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0 MITSUBISHI

MGF4319G

Super Low Noise InGaAs HEMT

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22 MITSUBISHI

MGF4319G

Super Low Noise InGaAs HEMT

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12 MITSUBISHI

MGF431XG

Super Low Noise InGaAs HEMT

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4 MITSUBISHI

MGF431XG

Super Low Noise InGaAs HEMT

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7 MITSUBISHI

MGF4416D-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, GD-9, 4 PIN

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0 MITSUBISHI

MGF4417D-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, GD-9, 4 PIN

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0 MITSUBISHI

MGF4418D-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, GD-9, 4 PIN

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0 MITSUBISHI

MGF4511C-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4

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0 MITSUBISHI

MGF4511D

Transistor

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0 MITSUBISHI

MGF4511D-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, METAL CERAMIC, GD-15, 4 PIN

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0 MITSUBISHI

MGF4714AP

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, PLASTIC, GD-18, 4 PIN

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0 MITSUBISHI

MGF4714AP-65

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

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0 MITSUBISHI