MGF4319F [MITSUBISHI]

Transistor;
MGF4319F
型号: MGF4319F
厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述:

Transistor

文件: 总10页 (文件大小:655K)
下载:  下载PDF数据表文档文件

MGF4319F-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

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0 MITSUBISHI

MGF4319G

Super Low Noise InGaAs HEMT

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22 MITSUBISHI

MGF4319G

Super Low Noise InGaAs HEMT

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12 MITSUBISHI

MGF431XG

Super Low Noise InGaAs HEMT

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4 MITSUBISHI

MGF431XG

Super Low Noise InGaAs HEMT

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7 MITSUBISHI

MGF4416D-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, GD-9, 4 PIN

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0 MITSUBISHI

MGF4417D-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, GD-9, 4 PIN

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0 MITSUBISHI

MGF4418D-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, GD-9, 4 PIN

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0 MITSUBISHI

MGF4511C-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4

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0 MITSUBISHI

MGF4511D

Transistor

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0 MITSUBISHI

MGF4511D-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, METAL CERAMIC, GD-15, 4 PIN

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0 MITSUBISHI

MGF4714AP

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, PLASTIC, GD-18, 4 PIN

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0 MITSUBISHI

MGF4714AP-65

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

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0 MITSUBISHI

MGF4714AP-65

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

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0 MITSUBISHI

MGF4714CP

PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT

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40 MITSUBISHI