MGF4511D [MITSUBISHI]

Transistor;
MGF4511D
型号: MGF4511D
厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述:

Transistor

文件: 总10页 (文件大小:652K)
下载:  下载PDF数据表文档文件

MGF4511D-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, METAL CERAMIC, GD-15, 4 PIN

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0 MITSUBISHI

MGF4714AP

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, PLASTIC, GD-18, 4 PIN

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0 MITSUBISHI

MGF4714AP-65

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

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0 MITSUBISHI

MGF4714AP-65

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

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0 MITSUBISHI

MGF4714CP

PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT

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40 MITSUBISHI

MGF4851A

SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)

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34 MITSUBISHI

MGF4910D

TAPE CARRIER SUPER LOW NOISE INGAAS HEMT

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29 MITSUBISHI

MGF4910E

SUPER LOW MOISE InGaAs HEMT

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20 MITSUBISHI

MGF4914D

TAPE CARRIER SUPER LOW NOISE INGAAS HEMT

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18 MITSUBISHI

MGF4914D-65

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

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0 MITSUBISHI

MGF4914E

SUPER LOW MOISE InGaAs HEMT

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14 MITSUBISHI

MGF4914E-01

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4

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0 MITSUBISHI

MGF4914E-01

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4

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0 MITSUBISHI

MGF4914E-65

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

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0 MITSUBISHI

MGF4916

SUPER LOW NOISE InGaAs HEMT

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66 MITSUBISHI